DMC1029UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID MAX TA = +25°C 29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VGS = 1.5V 61mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V 210mΩ @ VGS = -1.5V 5.6A 5.1A 4.5A 3.7A -3.8A -3.3A -2.8A -2.3A V(BR)DSS Q1 N-Channel 12V Q2 P-Channel -12V Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate) Applications Load Switch Power Management Functions Portable Power Adaptors U-DFN2020-6 D2 D1 S2 G2 D2 G2 G1 D1 D1 D2 G1 S2 S1 S1 Pin1 N-CHANNEL MOSFET P-CHANNEL MOSFET Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMC1029UFDB -7 DMC1029UFDB -13 Notes: Case U-DFN2020-6 U-DFN2020-6 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information 2D Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMC1029UFDB Document number: DS37710 Rev. 2 - 2 Mar 3 2D = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) YM NEW PRODUCT Device Features 2016 D Apr 4 May 5 2017 E Jun 6 1 of 9 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D February 2015 © Diodes Incorporated DMC1029UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Q1 N-CHANNEL Q2 P-CHANNEL Units VDSS 12 -12 V Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 5) VGS = 4.5V VGSS ±8 ±8 V Steady State TA = +25C TA = +70C ID 5.6 4.4 -3.8 -3.0 A t < 5s TA = +25C TA = +70C ID 7.2 5.8 -5.0 -4.0 A IS 1 -1 A IDM 20 15 12 -15 -12 8 A A mJ Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Avalanche Current (L = 0.1mH) Avalanche Energy (L = 0.1mH) IAS EAS Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Symbol Steady State t < 5s Steady State t < 5s Thermal Resistance, Junction to Case Operating and Storage Temperature Range Note: PD RθJA Value 1.4 2.2 91 55 RθJC 20 TJ, TSTG -55 to +150 Units W °C/W °C 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. DMC1029UFDB Document number: DS37710 Rev. 2 - 2 2 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC1029UFDB NEW PRODUCT Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 12 — — — — — — 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) RDS(ON) — 17 20 24 30 0.6 1 29 34 44 65 1.2 V Static Drain-Source On-Resistance 0.4 — — — — — mΩ VDS = VGS, ID = 250μA VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4.6A VGS = 1.8V, ID = 4.1A VGS = 1.5V, ID = 2A VGS = 0V, IS = 1A — — — — — — — — — — — — 914 132 119 1.26 10.5 19.6 1.2 1.6 5.0 10.5 16.6 4.1 — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF V Test Condition VDS = 6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 6V, ID = 6.5A VDD = 6V, VGS = 4.5V, RL = 1.2Ω, RG = 1Ω Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 — — — — — — -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) RDS(ON) — 37 47 63 90 -0.65 -1 61 81 115 210 -1.2 V Static Drain-Source On-Resistance -0.4 — — — — — mΩ VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3.6A VGS = -2.5V, ID = -3.2A VGS = -1.8V, ID = -1A VGS = -1.5V, ID = -1A VGS = 0V, IS = -1A — — — — — — — — — — — — 915 225 183 56.9 10.7 17.9 1.7 3.0 5.7 11.5 27.8 26.4 — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF V Test Condition VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -6V, ID = -4.3A VDD = -6V, VGS = -4.5V, RL = 1.6Ω, RG = 1Ω 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMC1029UFDB Document number: DS37710 Rev. 2 - 2 3 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC1029UFDB Typical Characteristics - N-CHANNEL 20 20.0 VGS=1.8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=2.0V 16.0 14.0 VGS=2.5V 12.0 VGS=3.0V 10.0 VGS=4.5V 8.0 VGS=1.2V VGS=8.0V 6.0 16 14 12 10 8 TA=150℃ 6 TA=125℃ TA=25℃ 4 2.0 TA=85℃ 2 VGS=1.0V 0.0 TA=-55℃ 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 5 0.05 0.04 VGS=1.5V VGS=1.8V 0.03 VGS=2.5V 0.02 VGS=4.5V 0.01 0 1 3 5 7 9 11 13 15 17 19 21 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS= 5.0V 18 VGS=1.5V 4.0 0.03 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 2 0.1 0.08 ID=5.0A 0.06 ID=4.1A 0.04 ID=2.0A ID=4.6A 0.02 0 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 8 1.8 VGS= 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 18.0 TA=150℃ 0.025 TA=125℃ 0.02 TA=85℃ 0.015 TA=25℃ 0.01 TA=-55℃ 0.005 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMC1029UFDB Document number: DS37710 Rev. 2 - 2 4 of 9 www.diodes.com 1.6 VGS=2.5V, ID=3.0A 1.4 1.2 VGS=4.5V, ID=5.0A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature February 2015 © Diodes Incorporated 0.035 0.03 VGS=2.5V, ID=3.0A 0.025 0.02 0.015 1 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 VGS=4.5V, ID=5.0A 0.01 0.005 0.9 0.8 0.7 ID=1mA 0.6 0.5 0.4 ID=250μA 0.3 0.2 0.1 0 0 -50 -25 0 25 50 75 100 125 150 -50 20 0 25 50 75 100 125 150 10000 CT, JUNCTION CAPACITANCE (pF) 18 IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 16 14 12 VGS=0V TA=150℃ 10 8 VGS=0V TA=85℃ VGS=0V TA=125℃ 6 VGS=0V TA=25℃ 4 2 f=1MHz Ciss 1000 Coss 100 Crss VGS=0V, TA=-55℃ 0 0 0.3 0.6 0.9 1.2 10 1.5 0 2 4 100 ID, DRAIN CURRENT (A) RDS(ON) Limited 6 VDS=6V, ID=6.5A 4 10 15 Qg (nC) Figure 11. Gate Charge DMC1029UFDB Document number: DS37710 Rev. 2 - 2 10 12 20 5 of 9 www.diodes.com PW =100μs PW =100 ms PW =1s PW =10ms 1 0.01 0 PW =1ms 10 0.1 2 5 8 Figure 10. Typical Junction Capacitance 8 0 6 VDS, DRAIN-SOURCE Voltage (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current VGS (V) NEW PRODUCT DMC1029UFDB TJ(Max)=150℃ TA=25℃ VGS=4.5V Single Pulse DUT on 1*MRP Board 0.01 PW =10s DC 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMC1029UFDB Typical Characteristics - P-CHANNEL 10.0 20 9.0 VGS=2.5V 6.0 VGS=3.0V VGS=1.5V VGS=4.5V 5.0 4.0 3.0 VGS=8.0V 14 12 10 8 1.0 2 0.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. Typical Output Characteristic 5 TA=85℃ 0.5 0.09 0.45 0.08 VGS=-1.8V 0.06 0.05 VGS=-2.5V 0.04 TA=-55℃ 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 14. Typical Transfer Characteristic 3 0.4 0.35 0.3 ID=-3.6A 0.25 0.2 0.15 ID=-3.2A 0.1 0.03 TA=25℃ TA=125℃ 0 0.1 0.07 TA=150℃ 6 4 VGS=1.2V 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 7.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 16 VGS=2.0V 2.0 ID=-1.0A 0.05 VGS=-4.5V 0.02 0 1 5 7 9 11 13 15 17 19 21 ID, DRAIN-SOURCE CURRENT (A) Figure 15. Typical On-Resistance vs Drain Current and Gate Voltage 3 1 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA=150℃ 0.045 0.04 TA=125℃ TA=85℃ 0.035 TA=25℃ 0.03 TA=-55℃ 0.025 0.02 1 3 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 16. Typical Transfer Characteristic 8 1.4 VGS=- 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 8.0 VDS=-5.0V 18 VGS=1.8V 5 7 9 11 13 15 17 19 21 ID, DRAIN CURRENT (A) Figure 17. Typical On-Resistance vs Drain Current and Temperature DMC1029UFDB Document number: DS37710 Rev. 2 - 2 6 of 9 www.diodes.com 1.3 VGS=-2.5V, ID=-3.0A 1.2 1.1 1 VGS=-4.5V, ID=-5.0A 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 18. On-Resistance Variation with Temperature February 2015 © Diodes Incorporated VGS(TH), GATE THESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω) 1 0.07 0.06 VGS=-2.5V, ID=-3.0A 0.05 0.04 0.03 VGS=-4.5V, ID=-5.0A -50 0.8 0.7 ID=-1mA 0.6 ID=-250µA 0.5 0.4 0.3 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 20. Gate Theshold Variation vs Junction Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 19. On-Resistance Variation with Temperature 20 10000 18 f=1MHz VGS=0V CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 0.9 0.2 0.02 16 14 12 10 TA=150℃ 8 6 TA=125℃ 4 TA=85℃ TA=25℃ TA=-55℃ 2 Ciss 1000 Coss Crss 100 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) 0 1.5 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) 12 Figure 22. Typical Junction Capacitance Figure 21. Diode Forward Voltage vs. Current 100 8 PW =100µs RDS(ON) Limited PW =1ms ID, DRAIN CURRENT (A) 6 VDS=-6V, ID=-4.3A VGS (V) NEW PRODUCT DMC1029UFDB 4 2 0 PW =100ms 1 PW =1s 0.1 0.01 0 5 10 15 Qg (nC) Figure 23. Gate Charge DMC1029UFDB Document number: DS37710 Rev. 2 - 2 20 7 of 9 www.diodes.com PW =10ms 10 TJ(Max)=150℃ PW =10s TA=25℃ DC VGS=4.5V Single Pulse DUT on 1*MRP Board 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24. SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMC1029UFDB r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D=0.9 D=0.7 D=0.5 0.1 D=0.3 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t)=r(t) * RθJA RθJA=171℃/W Duty Cycle, D=t1/ t2 D=0.005 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 25. Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions Value (in mm) Z 1.67 G 0.20 G1 0.40 X1 1.0 X2 0.45 Y 0.37 Y1 0.70 C 0.65 G X2 G1 X1 G Y1 Z DMC1029UFDB Document number: DS37710 Rev. 2 - 2 8 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC1029UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMC1029UFDB Document number: DS37710 Rev. 2 - 2 9 of 9 www.diodes.com February 2015 © Diodes Incorporated