DMC3016LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) Max ID TA = +25°C 16mΩ @ VGS = 10V 8.2A 20mΩ @ VGS = 4.5V 7.3A 28mΩ @ VGS = -10V -6.2A 38mΩ @ VGS = -4.5V -5.2A Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications DC-DC Converters Power Management Functions Backlighting Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (Approximate) SO-8 D1 Pin1 S2 D2 G2 D2 S1 D1 G1 D1 G1 G2 S1 Top View Pin Configuration Top View D2 N-Channel MOSFET S2 P-Channel MOSFET Ordering Information (Note 4) Part Number DMC3016LSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 C3016LD C6040SD L YY WW 1 5 = Manufacturer’s Marking C3016LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/Test Site) YY = Date Code Marking for CAT (Chengdu Assembly/Test Site) C3016LD C6040SD L YY WW 4 Chengdu A/T Site DMC3016LSD Document Number: DS36935 Rev. 3 - 2 1 4 Shanghai A/T Site 1 of 10 www.diodes.com August 2015 © Diodes Incorporated DMC3016LSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS VGSS Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Value Q1 30 Value Q2 -30 Units V ±20 ±20 V Steady State TA = +25°C TA = +70°C ID 8.2 6.5 -6.2 -5.0 A t<10s TA = +25°C TA = +70°C ID 10.5 8.4 -8.0 -6.4 A Maximum Body Diode Forward Current (Note 6) IS 2.5 -2.5 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 80 -40 A Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH IAS 22 25 22 25 A mJ EAS Thermal Characteristics Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD TA = +70°C Steady state t<10s TA = +25°C Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) PD W °C/W W 1.0 78 47 12 RθJA RθJC TJ, TSTG Operating and Storage Temperature Range Units 0.8 102 62 1.6 RθJA TA = +70°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Value 1.2 °C/W -55 to +150 °C Electrical Characteristics N-Channel Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS — — ±100 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 — 3.0 V VDS = VGS, ID = 250μA — 12 16 — 15 0.7 20 1.0 1,415 119 — Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance RDS(ON) VSD — Ciss — Coss Crss — — Gate Resistance Rg — 2.6 — — 3.2 Total Gate Charge (VGS = 4.5V) Qg — 11.3 — Total Gate Charge (VGS = 10V) Gate-Source Charge Qg — — — 25.1 3.5 — Qgs Reverse Transfer Capacitance Gate-Drain Charge 3.6 — — — 4.8 — tr — 16.5 — tD(off) — 26.1 — tf — 5.6 — Turn-On Delay Time Qgd tD(on) Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: 82 mΩ VGS = 10V, ID = 12A VGS = 4.5V, ID = 10A V VGS = 0V, IS = 1A pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 12A nS VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω, 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. UIS in production with L = 0.1mH, starting TA = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMC3016LSD Document Number: DS36935 Rev. 3 - 2 2 of 10 www.diodes.com August 2015 © Diodes Incorporated DMC3016LSD Electrical Characteristics P-Channel Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Symbol Min Typ Max BVDSS -30 IDSS -1 IGSS VGS(th) -1.0 RDS(ON) V VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V 100 21 -3.0 V VDS = VGS, ID = -250µA VGS = -10V, ID = -7A 28 30 38 VSD -0.7 -1.2 Ciss 1,241 Coss 147 Reverse Transfer Capacitance Gate Resistance Crss RG 110 15 Qg Qg 10.9 22 Qgs 3.5 Gate-Drain Charge Qgd 4.7 Turn-On Delay Time Turn-On Rise Time tD(on) tr 9.7 17.1 Turn-Off Delay Time tD(off) 60.5 tf 40.4 Turn-Off Fall Time DMC3016LSD Document Number: DS36935 Rev. 3 - 2 3 of 10 www.diodes.com Test Condition µA nA Output Capacitance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Unit mΩ VGS = ±20V, VDS = 0V VGS = -4.5V, ID = -6.2A V VGS = 0V, IS = -2.1A pF VDS = -15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -15V, ID = -7A nS VDS = -15V, ID = -7A VGS = -10V, RG =6Ω August 2015 © Diodes Incorporated DMC3016LSD 30 30 VGS = 10V VGS = 3.0V VDS = 5.0V VGS = 4.5V 25 25 VGS = 4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.5V 20 15 10 VGS = 2.5V 5 20 15 10 TA = 150°C 5 T A = 125°C 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 2 0.02 VGS = 4.5V 0.01 VGS = 10V 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 5A 1.4 VGS = 10 V ID = 10A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMC3016LSD Document Number: DS36935 Rev. 3 - 2 0 4 of 10 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.03 VGS = 4.5V 0.025 TA = 150°C 0.02 T A = 125°C TA = 85°C 0.015 TA = 25°C 0.01 T A = -55°C 0.005 0 30 1.8 1.6 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 TA = 25°C TA = -55°C VGS = 2.2V 0 TA = 85°C 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.024 VGS = 4.5V ID = 5A 0.02 0.016 VGS = 10V ID = 10A 0.012 0.008 0.004 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature August 2015 © Diodes Incorporated 3 30 2.5 25 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) DMC3016LSD 2 ID = 1mA 1.5 ID = 250µA 1 0.5 TA = 25°C 15 10 5 0 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10000 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 TA = 150°C CT, JUNCTION CAPACITANCE (pF) IDSS, DRAIN LEAKAGE CURRENT (µA) 20 1000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 0.1 0 1000 C oss 100 Crss 10 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 10 0 100 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 RDS(on) Limited 9 8 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) C iss 7 VDS = 15V ID = 12A 6 5 4 3 2 1 0 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMC3016LSD Document Number: DS36935 Rev. 3 - 2 25 5 of 10 www.diodes.com 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 August 2015 © Diodes Incorporated DMC3016LSD 20 VGS = -10V 20 VGS = -3.5V VDS = -5.0V VGS = -4.5V 15 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -4.0V VGS = -5.0V VGS = -3.0V 10 5 15 10 5 TA = 150C TA = 125C VGS = -2.5V TA = 85C TA = 25C TA = -55C 0 1 2 3 4 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 13 Typical Output Characteristics 0.05 0.04 VGS = -4.5V 0.03 VGS = -10V 0.02 0.01 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 15 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 1.6 VGS = -10V ID = -10A 1.4 VGS = -5V ID = -5A 1.2 1 0.8 0.6 -50 00 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 17 On-Resistance Variation with Temperature DMC3016LSD Document Number: DS36935 Rev. 3 - 2 6 of 10 www.diodes.com 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 14 Typical Transfer Characteristics 0.05 5 TA = 150C VGS = -4.5V TA = 125C 0.04 TA = 85C T A = 25C 0.03 TA = -55C 0.02 0.01 0 0 2 4 6 8 10 12 14 16 18 ID, DRAIN SOURCE CURRENT (A) Figure 16 Typical On-Resistance vs. Drain Current and Temperature 20 0.05 0.04 VGS = -5V ID = -5A 0.03 VGS = -10V ID = -10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 18 On-Resistance Variation with Temperature August 2015 © Diodes Incorporated DMC3016LSD 20 2.5 2 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 3 -I D = 1mA 1.5 -ID = 250µA 1 15 TA= 150C 10 TA= 125C 5 TA= 25C TA= 85C 0.5 TA= -55C 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 19 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 20 Diode Forward Voltage vs. Current 10000 10000 1000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) IDSS, LEAKAGE CURRENT (nA) TA = 150°C TA = 125°C 100 T A = 85°C TA = 25°C 10 1 0.1 0 Ciss 1000 Coss 100 C rss 10 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 21 Typical Drain-Source Leakage Current vs. Voltage 0 30 100 10 RDS(on) Limited 9 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 22 Typical Junction Capacitance 7 6 VDS = -15V ID = -7A 5 4 3 2 DC PW = 10s 1 PW = 1s PW = 100ms 0.1 T J(max) = 150°C PW = 10ms TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 1 0 10 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 23 Gate-Charge Characteristics DMC3016LSD Document Number: DS36935 Rev. 3 - 2 25 7 of 10 www.diodes.com 0.01 0.1 PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24 SOA, Safe Operation Area 100 August 2015 © Diodes Incorporated DMC3016LSD 1 D = 0.9 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 102°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 DMC3016LSD Document Number: DS36935 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 25 Transient Thermal Resistance 8 of 10 www.diodes.com 10 100 1000 August 2015 © Diodes Incorporated DMC3016LSD Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 SO-8 E1 E Gauge Plane Seating Plane A1 L Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A — 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h — 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 X Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C1 C2 Y DMC3016LSD Document Number: DS36935 Rev. 3 - 2 9 of 10 www.diodes.com August 2015 © Diodes Incorporated DMC3016LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMC3016LSD Document Number: DS36935 Rev. 3 - 2 10 of 10 www.diodes.com August 2015 © Diodes Incorporated