DMP3010LK3 Green Product Summary V(BR)DSS -30V Features and Benefits RDS(on) max ID TA = +25°C Low Input Capacitance Low On-Resistance 8mΩ @ VGS = -10V -17A Fast Switching Speed 10.2mΩ @ VGS = -4.5V -14.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications P-CHANNEL ENHANCEMENT MODE MOSFET DC-DC Converters Power management functions Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (approximate) D D TO252 G D G S S Top View Pin-Out Top View Equivalent Circuit Ordering Information (Note 4 & 5) Part Number DMP3010LK3-13 DMP3010LK3Q-13 Notes: Compliance Standard Automotive Case TO252 TO252 Packaging 2,500/Tape & Reel 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information Logo P3010L YYWW DMP3010LK3 Document number: DS35716 Rev. 5 - 2 Part no. . Xth week: 01 ~ 53 Year: “11＂ = 2011 1 of 7 www.diodes.com July 2013 © Diodes Incorporated DMP3010LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Continuous Drain Current (Note 7) VGS = -4.5V Steady State t<10s ID Value -30 ±20 -17.0 -13.0 ID -27.0 -21.0 A ID -14.5 -11.5 A ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 7) Avalanche Current (Note 8) Avalanche Energy (Note 8) IDM IS IAS EAS Units V V A -23.0 -18.0 -100 5.5 47 113 A A A mJ Value 1.7 72 29 3.4 37 15 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 6) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) RJA Total Power Dissipation (Note 7) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 7) RJA Operating and Storage Temperature Range TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 -1 100 V µA nA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD -1.6 6.5 7.2 30 -0.65 -2.1 8 10.2 -1.0 V Static Drain-Source On-Resistance -1.1 VDS = VGS, ID = -250µA VGS = -10V, ID = -10A VGS = -4.5V, ID = -10A VDS = -15V, ID = -10A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf 6234 1500 774 1.28 59.2 16.1 15.7 11.4 9.4 260.7 99.3 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V Test Condition pF VDS = 15V, VGS = 0V f = 1.0MHz µ VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -15V, VGS = -4.5V, ID = -10A ns VDS = -15V, VGEN = -10V, RG = 6Ω, ID = -1A 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8 .UIS in production with L = 0.1mH, TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. DMP3010LK3 Document number: DS35716 Rev. 5 - 2 2 of 7 www.diodes.com July 2013 © Diodes Incorporated DMP3010LK3 30 30 VGS = -10V 25 VGS = -5.0V 20 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -4.5V VGS = -3.5V VGS = -3.0V VGS = -2.5V 15 10 5 15 10 TA = 150°C VGS = -2.0V 0 0.5 1 1.5 2 2.5 3 3.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.012 0.008 VGS = -4.5V 0 VGS = -10V 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 30 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.016 0.014 VGS = -4.5V 0.012 TA = 150°C 0.010 TA = 125°C 0.008 TA = 85°C TA = 25°C 0.006 TA = -55°C 0.004 0.002 0 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.020 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 TA = 85°C TA = -55°C 0 4 0.016 0.004 TA = 125°C T A = 25°C 0.020 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 20 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VDS = -5V VGS = -10V ID = -20A 0.8 0.6 -50 VGS = -4.5V ID = -10A -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMP3010LK3 Document number: DS35716 Rev. 5 - 2 3 of 7 www.diodes.com 0.016 0.012 VGS = -4.5V ID = -10A 0.008 0.004 VGS = -10V ID = -20A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature July 2013 © Diodes Incorporated DMP3010LK3 30 25 2.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 ID = -1mA 1.5 ID = -250µA 1.0 0.5 T A = 25°C 15 10 5 0 -50 -25 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 100,000 10,000 Ciss -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 20 Coss 1,000 Crss 10,000 T A = 150°C 1,000 T A = 125°C 100 T A = 85°C 10 f = 1MHz 100 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Total Capacitance 1 20 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) 30 Figure 10 Typical Leakage Current vs. Drain-Source Voltage 10 100 P(pk), PEAK TRANSIENT POWER (W) -VGS, GATE-SOURCE VOLTAGE (V) TA = 25°C VDS = -15V ID = -10A 8 6 4 2 90 80 Single Pulse RJA = 72°C/W RJA(t) = r(t) * RJA T J - T A = P * RJA 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Source Voltage vs. Total Gate Charge DMP3010LK3 Document number: DS35716 Rev. 5 - 2 4 of 7 www.diodes.com 0 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Figure 12 Single Pulse Maximum Power Dissipation July 2013 © Diodes Incorporated DMP3010LK3 80 700 Starting Temperature (TJ) = 25°C 70 60 EAS 500 50 400 IAS 40 300 30 200 20 100 IAS, AVALANCHE CURRENT (A) EAS, AVALANCHE ENERGY (mJ) 600 10 0 0.1 0.2 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INDUCTOR (mH) Figure 13 Single-Pulse Avalanche Tested 0.3 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.50 D = 0.02 0.01 RJA(t) = r(t) * RJA RJA = 72°C/W Duty Cycle, D = t1/ t2 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.001 DMP3010LK3 Document number: DS35716 Rev. 5 - 2 0.01 0.1 1 10 100 t1, PULSE DURATION TIMES (sec) Figure 14 Transient Thermal Resistance 5 of 7 www.diodes.com 1,000 10,000 July 2013 © Diodes Incorporated DMP3010LK3 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Y2 C Y1 X1 DMP3010LK3 Document number: DS35716 Rev. 5 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 6 of 7 www.diodes.com July 2013 © Diodes Incorporated DMP3010LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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