Data Sheet Switching Diode 1SS400G Dimensions (Unit : mm) Applications High speed switching Land size figure (Unit : mm) 0.13±0.03 0.5 1.0±0.05 1.4±0.05 Features 1)Ultra small mold type.（VMD2） 2)High reliability 1.2 0.5 0.6±0.05 VMD2 Construction Silicon epitaxial planer 0.27±0.03 Structure 0.5±0.05 ROHM : VMD2 dot (year week factory) Taping dimensions (Unit : mm) 0.18±0.05 φ1.5+0.1 0 2±0.05 8.0±0.3 0.1 0.4 2.1±0.1 1.11±0.05 3.5±0.05 1.75±0.1 4±0.1 φ0.5 4±0.1 0.76±0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) Reverse voltage (DC) VR Forward current (repetitive peak) IFM Average rectified forward current Io Surge current (1S) Isurge Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Limits 0.3 2±0.05 0.65±0.05 Unit V V mA mA mA C C 90 80 225 100 500 150 55 to 150 Min. Typ. Max. Unit - - 1.2 V IF=100mA Conditions Reverse current IR - - 100 nA VR=80V Capacitance between terminal Reverse recovery time Ct - - 3.0 pF Trr - - 4.0 ns VR=0.5V f=1.0MHz VR=6V IF=10mA RL＝100Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A Data Sheet 1SS400G 100000 1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) Tj=150°C 10000 Tj=150°C 100 Tj=125°C Tj=25°C 10 Tj=75°C 1 Tj=125°C 1000 Tj=75°C 100 10 0.1 1 0 500 1000 1500 0 20 40 60 80 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 950 10 f=1MHz Tj=25°C Tj=25°C IF=0.1A n=30pcs 940 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Tj=25°C 1 930 920 910 900 890 880 AVE:891.2mV 870 860 850 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 1 Tj=25°C VR=80V n=30pcs 10 AVE:22.17nA Ta=25°C f=1MHz VR=0.5V n=10pcs 0.8 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 100 0.6 AVE:0.595pF 0.4 0.2 1 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A Data Sheet 1SS400G 2 20 16 8.3ms 14 12 10 8 Ta=25°C VR=6V IF=10mA RL=100Ω n=10pcs 1cyc IFSM REVERSE RECOVERY TIME:trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 18 AVE:3.9A 6 4 1.5 AVE:1.49ns 1 0.5 2 0 0 IFSM DISPERSION MAP trr DISPERSION MAP 100 100 IFSM 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 1cyc. 10 10 1 1 1 10 1 100 10 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 AVE：6.48kV 10 0 100 1000 AVE：1.60kV C=200pF R=0Ω TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 30 5 time Rth(j-c) 100 10 0.001 C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Rth(j-a) 3/4 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 2011.10 - Rev.A Data Sheet 1SS400G 0.006 0.14 D.C. 0.12 D=1/2 REVERSE POWER DISSIPATION:PR (W) 0.1 FORWARD POWER DISSIPATION:Pf(W) D.C. Sin(θ＝180) 0.08 0.06 0.004 D=1/2 0.002 0.04 Sin(θ＝180) 0.02 0 0 0 0.05 0.1 0.15 0 0.2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 40 50 60 70 80 Io VR t 0.15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 0V D.C. 10 T D=t/T VR=40V Tj=150°C D=1/2 0.1 Sin(θ＝180) 0.05 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 150 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A