Data Sheet Rectifier Diode RRE02VS4S Applications General Rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 Features 1)Low VF 2)Small mold type. (TUMD2S) 2.5±0.2 2.3 0.8 1.3±0.05 TUMD2S Structure Construction Silicon epitaxial planer 0.8±0.05 0.6±0.2 ROHM : TUMD2S 0.1 dot (year week factory) + day Taping dimensions (Unit : mm) φ1.55±0.1 0 0.25±0.05 1.75±0.1 8.0±0.2 2.75 2.8±0.05 2.0±0.05 3.5±0.05 4.0±0.1 1.43±0.05 Absolute maximum ratings (Tc=25°C) Parameter Symbol VRM Repetitive peak Reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Electrical characteristics (Tj=25°C) Parameter Symbol VF Forward voltage IR Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4.0±0.1 φ1.0±0.2 0 Conditions D≤0.5 Direct voltage Glass epoxy substrate mounted R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Conditions IF=0.2A VR=400V 1/4 Min. － － 0.9±0.08 Limits 400 400 Unit V V 0.2 A 1 A 150 - 55 to +150 °C °C Typ. 0.95 0.01 Max. 1.1 1 Unit V μA 2011.09 - Rev.A Data Sheet RRE02VS4S 1000 1 0.1 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Tj=150°C Tj=150°C Tj=125°C Tj=25°C 0.01 100 Tj=125°C Tj=25°C 1 Tj=75°C 0.1 0.001 0 0.5 1 0 1.5 100 200 300 400 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 1000 10 f=1MHz 995 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Tj=75°C 10 1 Tj=25°C IF=0.2A n=20pcs 990 985 980 975 970 AVE:962mV 965 960 955 0.1 950 0 10 20 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 Tj=25°C VR=400V n=20pcs 1 AVE:0.9nA Tj=25°C f=1MHz VR=0V n=10pcs 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 10 8 7 6 5 AVE:3.39pF 4 3 2 1 0.1 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A Data Sheet RRE02VS4S 10 10 1cyc IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 9 8 8.3ms 7 6 5 4 3 IFSM 8.3ms 8.3ms 1cyc 1 AVE:3.95A 2 1 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 10 100 10.0 9.0 t ELECTROSTATIC DISCHARGE TEST ESD(KV) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 1 8.0 7.0 6.0 5.0 AVE:6.84kV 4.0 3.0 AVE:4.58kV 2.0 1.0 C=200pF R=0Ω 0.0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS ESD DISPERSION MAP 0.4 1000 D.C. Rth(j-a) On glass-epoxy substrate soldering land 6mm□ 0.35 D=0.8 0.3 100 Rth(j-l) 10 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) C=100pF R=1.5kΩ D=0.5 half sin wave 0.25 0.2 0.15 0.1 0.05 1 0.001 0 0.01 0.1 1 10 100 1000 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.05 0.1 0.15 0.2 0.25 0.3 0.35 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS 3/4 2011.09 - Rev.A Data Sheet RRE02VS4S Io 0A 0A 0V 0.4 D=t/T VR=200V Tj=150°C On glass-epoxy substrate soldering land D.C. 0.4 D=0.8 0.25 D=0.5 0.2 half sin wave 0.15 0.1 VR t D=t/T VR=200V Tj=150°C 0.35 T D.C. T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0V VR t 0.35 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io 0.3 D=0.8 0.25 D=0.5 0.2 half sin wave 0.15 0.1 0.05 0.05 0 0 0 30 60 90 120 0 150 60 90 120 150 CASE TEMPERATURE:Tl(°C) DERATING CURVE (Io-Tl) AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 30 4/4 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A