RUL035N02 Nch 20V 3.5A Power MOSFET Datasheet lOutline VDSS 20V RDS(on) (Max.) 43mW ID 3.5A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6). Drain Drain Gate Source Drain Drain *1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Taping Reel size (mm) lApplication DC/DC converters Type 180 Tape width (mm) Basic ordering unit (pcs) 8 3,000 Taping code TR Marking XD lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 20 V Continuous drain current ID *1 3.5 A ID,pulse *2 7 A VGSS 10 V PD *3 1.0 W PD *4 0.32 W Tj 150 °C Tstg -55 to +150 °C Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/11 2013.02 - Rev.B Data Sheet RUL035N02 lThermal resistance Parameter Symbol Thermal resistance, junction - ambient Values Unit Min. Typ. Max. RthJA *3 - - 125 °C/W RthJA *4 - - 391 °C/W lElectrical characteristics(Ta = 25°C) Parameter Drain - Source breakdown voltage Breakdown voltage temperature coefficient Symbol V(BR)DSS Conditions VGS = 0V, ID = 1mA ΔV(BR)DSS ID=1mA ΔTj referenced to 25°C Values Unit Min. Typ. Max. 20 - - V - 20 - mV/°C Zero gate voltage drain current IDSS VDS = 20V, VGS = 0V - - 1 mA Gate - Source leakage current IGSS VGS = 10V, VDS = 0V - - 10 mA Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 0.3 - 1.0 V Gate threshold voltage temperature coefficient ΔV(GS)th ΔTj ID=1mA referenced to 25°C - -1.9 - mV/°C VGS=4.5V, ID=3.5A - 31 43 VGS=2.5V, ID=3.5A - 38 53 RDS(on) *5 VGS=1.8V, ID=1.8A - 50 70 VGS=1.5V, ID=0.7A - 66 93 VGS=4.5V, ID=3.5A, Tj=125°C - 56 80 f = 1MHz, open drain - 7.5 - W 3.2 8.5 - S Static drain - source on - state resistance Gate input resistannce Transconductance RG gfs *5 VDS=10V, ID=3.5A mW *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a seramic board (30×30×0.8mm) *4 Mounted on a FR4 (15×20×0.8mm) *5 Pulsed www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/11 2013.02 - Rev.B Data Sheet RUL035N02 lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance Ciss VGS = 0V - 460 - Output capacitance Coss VDS = 10V - 110 - Reverse transfer capacitance Crss f = 1MHz - 60 - VDD ⋍ 10V, VGS = 4.5V - 10 - tr *5 ID = 1.8A - 20 - td(off) *5 RL = 5.6W - 40 - tf *5 RG = 10W - 50 - Turn - on delay time Rise time Turn - off delay time Fall time td(on) *5 Unit pF ns lGate Charge characteristics(Ta = 25°C) Parameter Symbol Total gate charge Qg *5 Gate - Source charge Qgs *5 Gate - Drain charge Qgd *5 Conditions VDD ⋍ 10, ID=3.5A VGS = 4.5V Values Min. Typ. Max. - 5.7 - - 1.1 - - 0.9 - Unit nC lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Inverse diode continuous, forward current Forward voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Symbol IS *1 VSD *5 Conditions Values Unit Min. Typ. Max. Ta = 25°C - - 0.8 A VGS = 0V, Is = 0.8A - - 1.2 V 3/11 2013.02 - Rev.B Data Sheet RUL035N02 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 Operation in this area is limited by RDS(on) ( VGS = 10V ） 80 60 40 20 0 0 50 100 150 PW = 1ms 1 DC Operation 0.1 0.01 200 PW = 10ms Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 100 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maxmum Power dissipation 1000 10 Ta=25ºC Single Pulse Ta=25ºC Single Pulse 1 top D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle 0.1 0.01 0.001 0.0001 Rth(ch-a)=125ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm) 0.01 1 Peak Transient Power : P(W) Normalized Transient Thermal Resistance : r(t) PW = 100ms 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 10 1 0.0001 100 Pulse Width : PW [s] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 100 0.01 1 100 Pulse Width : PW [s] 4/11 2013.02 - Rev.B Data Sheet RUL035N02 lElectrical characteristic curves Fig.6 Typical Output Characteristics(II) Fig.5 Typical Output Characteristics(I) Ta=25ºC Pulsed 3 VGS=4.5V VGS=4.5V VGS=2.5V 3 VGS=1.8V VGS=1.8V Drain Current : ID [A] Drain Current : ID [A] VGS=2.5V 2 VGS=1.5V 1 VGS=1.3V 0 0.2 0.4 0.6 0.8 VGS=1.3V 1 VGS=1.2V VGS=1.1V 0 1 0 2 4 6 8 10 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.8 Typical Transfer Characteristics Fig.7 Breakdown Voltage vs. Junction Temperature 60 VGS = 0V ID = 1mA pulsed 40 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] VGS=1.5V 2 VGS=1.1V 0 Ta=25ºC Pulsed 20 0 -50 0 50 100 150 Junction Temperature : Tj [°C] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Gate - Source Voltage : VGS [V] 5/11 2013.02 - Rev.B Data Sheet RUL035N02 lElectrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current 100 VDS = 10V ID = 1mA pulsed Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 2 1 0 -50 0 50 100 VDS= 10V Pulsed 10 1 0.1 0.01 150 Junction Temperature : Tj [°C] Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 1 10 Drain Current : ID [A] Fig.11 Drain CurrentDerating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Drain Current Dissipation : ID/ID max. (%) 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150 Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 0 Static Drain - Source On-State Resistance : RDS(on) [mW] 1.2 6/11 2013.02 - Rev.B Data Sheet RUL035N02 lElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 60 Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 50 40 30 20 VGS = 10V ID=3.5A pulsed 10 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] 7/11 2013.02 - Rev.B Data Sheet RUL035N02 lElectrical characteristic curves Fig.16 Static Drain-Source On-State Resistance vs. Drain Current(III) Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Drain Current : ID [A] Drain Current : ID [A] Fig.18 Static Drain - Source On - State Resistance vs. Drain Current(V) Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Drain Current : ID [A] 8/11 2013.02 - Rev.B Data Sheet RUL035N02 lElectrical characteristic curves Fig.20 Switching Characteristics Capacitance : C [pF] Switching Time : t [ns] Fig.19 Typical Capacitance vs. Drain - Source Voltage Drain - Source Voltage : VDS [V] Drain Current : ID [A] Fig.22 Source Current vs. Source Drain Voltage Source Current : IS [A] Gate - Source Voltage : VGS [V] Fig.21 Dynamic Input Characteristics Source-Drain Voltage : VSD [V] Total Gate Charge : Qg [nC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 9/11 2013.02 - Rev.B Data Sheet RUL035N02 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 10/11 2013.02 - Rev.B Data Sheet RUL035N02 lDimensions (Unit : mm) D A e x S A Lp HE E L TUMT6 b c e1 A A2 e A1 l1 y S S b2 Patterm of terminal position areas DIM A A1 A2 b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.85 0.00 0.10 0.72 0.82 0.25 0.40 0.12 0.22 1.90 2.10 1.60 1.80 0.65 2.00 2.20 0.20 0.40 0.10 0.10 MILIMETERS MIN MAX 1.70 0.50 0.50 INCHES MIN 0 0.028 0.01 0.005 0.075 0.063 MAX 0.033 0.004 0.032 0.016 0.009 0.083 0.071 0.03 0.079 0.087 0.01 - 0.016 0.004 0.004 INCHES MIN MAX 0.067 - 0.02 0.02 Dimension in mm/inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 11/11 2013.02 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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