RHP030N03 : Transistors

RHP030N03
4V Drive Nch MOSFET
Data Sheet
Dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
MPT3
SOT-89
1.5
2.5
4.0
0.5
4.5
1.6
Features
1) Low On-resistance.
2) 4V drive.
(2)
(3)
1.0
(1)
Applications
Switching
0.5
0.4
1.5
(1)Gate
0.4
0.4
1.5
3.0
(2)Drain
(3)Source
Inner circuit
Packaging specifications
Package
Type
Abbreviated symbol : KZ
Taping
Code
T100
Basic ordering unit (pieces)
1000
(1) Gate
(2) Drain
(3) Source
RHP030N03
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain current
Symbol
VDSS
VGSS
ID
IDP ∗1
IDR
IDRP ∗1
Continuous
Pulsed
Continuous
Pulsed
PD
Total power dissipation
Tch
Tstg
Channel temperature
Range of storage temperature
Limits
30
±20
3
10
3
10
500
2 ∗2
150
−55 to +150
Unit
V
V
A
A
A
A
mW
W
°C
°C
Limits
250
62.5 ∗
Unit
°C/W
°C/W
∗1 Pw≤10μs, Duty cycle≤1%
∗2 When mounted on a 40×40×0.7mm ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
∗ When mounted on a 40×40×0.7mm ceramic board
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c 2014 ROHM Co., Ltd. All rights reserved.
○
1/6
2014.08 - Rev.B
Data Sheet
RHP030N03
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Parameter
−
30
−
1.0
−
−
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
90
160
−
160
90
27
7
11
15
4.5
6.5
1.0
1.5
±10
−
1
2.5
120
210
−
−
−
−
−
−
−
−
−
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Unit
μA
V
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 3A, VGS= 10V
ID= 3A, VGS= 4V
VDS= 10V, ID= 3A
VDS= 10V
VGS=0V
f=1MHz
VDD 15V
ID= 1.5A
VGS= 10V
RL=10Ω
RG=10Ω
VDD 15V
VGS= 10V
ID= 3A
∗Pulsed
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c 2014 ROHM Co., Ltd. All rights reserved.
○
2/3
2014.08 - Rev.B
Data Sheet
RHP030N03
Electrical characteristics curves
Coss
Crss
10
1
0.01
0.1
1
10
Ta=25°C
VDD= 15V
VGS= 10V
RG=10Ω
Pulsed
100
tf
td (off)
10
td (on)
tr
0.1
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
REVERSE DRAIN CURRENT : IDR (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
0.4
ID=3.0A
0.3
1.5A
0.2
0.1
0
1
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
3.5
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Switching Characteristics
Fig.3 Typical Transfer Characteristics
10
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.1
10
10
0.5
Ta=125°C
75°C
25°C
−25°C
1
0.01
1
0.01
100
Ta=25°C
Pulsed
VDS=10V
Pulsed
DRAIN CURRENT : ID (A)
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ciss
100
10
1000
Ta=25°C
f=1MHz
VGS=0V
REVERSE DRAIN CURRENT : IDR (A)
1000
0
0.2
14
0.4
0.6
0.8
1
1.2
1.4
Ta=25°C
Pulsed
1
VGS=10V
0.1
0V
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Reverse Drain Current vs.
Source-Drain Voltage (  )
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage (  )
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1
VGS=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.01
0.01
0.1
1
10
VGS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.01
0.1
1
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
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c 2014 ROHM Co., Ltd. All rights reserved.
○
GATE THRESHOLD VOLTAGE : VGS (th) (V)
GATE-SOURCE VOLTAGE : VGS (V)
3/3
10
2.5
VSD=10V
ID=1mA
Pulsed
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
CHANNEL TEMPERATURE : Tch (°C)
Fig.9 Gate Threshold Voltage vs.
Channel Temperature
2014.08 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
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such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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R1102A