NB4N840M 3.3V 3.2Gb/s Dual Differential Clock/Data 2 x 2 Crosspoint Switch with CML Output and Internal Termination http://onsemi.com MARKING DIAGRAM Description The NB4N840M is a high−bandwidth fully differential dual 2 x 2 crosspoint switch with CML inputs/outputs that is suitable for applications such as SDH/SONET, DWDM, Gigabit Ethernet and high speed switching. Fully differential design techniques are used to minimize jitter accumulation, crosstalk, and signal skew, which make this device ideal for loop−through and protection channel switching applications. Internally terminated differential CML inputs accept AC−coupled LVPECL (Positive ECL) or direct coupled CML signals. By providing internal 50 W input and output termination resistor, the need for external components is eliminated and interface reflections are minimized. Differential 16 mA CML outputs provide matching internal 50 W terminations, and 400 mV output swings when externally terminated, 50 W to VCC. Single−ended LVCMOS/LVTTL SEL inputs control the routing of the signals through the crosspoint switch which makes this device configurable as 1:2 fan−out, repeater or 2 x 2 crosspoint switch. The device is housed in a low profile 5 x 5 mm 32−pin QFN package. • Plug−in compatible to the MAX3840 and SY55859L Maximum Input Clock Frequency 2.7 GHz Maximum Input Data Frequency 3.2 Gb/s 225 ps Typical Propagation Delay 80 ps Typical Rise and Fall Times 7 ps Channel to Channel Skew 430 mW Power Consumption < 0.5 ps RMS Jitter 7 ps Peak−to−Peak Data Dependent Jitter Power Saving Feature with Disabled Outputs Operating Range: VCC = 3.0 V to 3.6 V with VEE = 0 V CML Output Level (400 mV Peak−to−Peak Output), Differential Output These are Pb−Free Devices © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 5 NB4N 840M ALYWG QFN32 MN SUFFIX CASE 488AM A WL YY WW G DA0 DA0 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package CML QA0 0 CML 1 QA0 ENA0 SELA0 0 DA1 DA1 CML DB0 DB0 CML 1 QA1 CML QA1 ENA1 SELA1 Features • • • • • • • • • • • • 1 32 1 1 0 QB0 CML 1 QB0 ENB0 SELB0 QB1 0 DB1 DB1 CML 1 CML QB1 ENB1 SELB1 Figure 1. Functional Block Diagram ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Publication Order Number: NB4N840M/D NB4N840M Table 1. TRUTH TABLE L H H H DA0/DB0 DA1/DB1 Quad Repeater H L H H DA1/DB1 DA0/DB0 Crosspoint Switch H H H H DA1/DB1 DA1/DB1 1:2 Fanout X X L L Disable/Power Down Disable/Power Down SELA1 1:2 Fanout DA0 DA0/DB0 DA0 QA1/QB1 DA0/DB0 SELA0 QA0/QB0 H ENA0 ENB0/ENB1 H DA1 ENA0/ENA1 L DA1 SELA1/SELB1 L ENA1 SELA0/SELB0 32 31 30 29 28 27 26 25 ENB1 1 24 GND DB1 2 23 VCC DB1 3 22 QA0 ENB0 4 21 QA0 NB4N840M 6 19 QA1 DB0 7 18 QA1 SELB1 8 17 VCC 11 12 13 14 15 Figure 2. Pin Configuration (Top View) http://onsemi.com 2 16 VCC 10 VCC GND 9 QB1 DB0 QB1 VCC VCC 20 QB0 5 QB0 SELB0 Function No output (@ VCC) NB4N840M Table 2. PIN DESCRIPTION Pin Name I/O 1 ENB1 LVTTL Description 2 DB1 CML Input Channel B1 Positive Signal Input 3 DB1 CML Input Channel B1 Negative Signal Input 4 ENB0 LVTTL Channel B0 Output Enable. LVTTL low input powers down B0 output stage. 5 SELB0 LVTTL Channel B0 Output Select. See Table 1. 6 DB0 CML Input Channel B0 Positive Signal Input 7 DB0 CML Input Channel B0 Negative Signal Input 8 SELB1 LVTTL 9,24 GND − Supply Ground. All GND pins must be externally connected to power supply to guarantee proper operation. 10, 13, 16, 17, 20, 23 VCC − Positive Supply. All VCC pins must be externally connected to power supply to guarantee proper operation. Channel B1 Output Enable. LVTTL low input powers down B1 output stage. Channel B1 Output Select. See Table 1. 11 QB0 CML Output Channel B0 Negative Output. 12 QB0 CML Output Channel B0 Positive Output. 14 QB1 CML Output Channel B1 Negative Output. 15 QB1 CML Output Channel B1 Positive Output. 18 QA1 CML Output Channel A1 Negative Output. 19 QA1 CML Output Channel A1 Positive Output. 21 QA0 CML Output Channel A0 Negative Output. 22 QA0 CML Output Channel A0 Positive Output. 25 SELA1 LVTTL 26 DA0 CML Input Channel A0 Positive Signal Input. 27 DA0 CML Input Channel A0 Negative Signal Input. 28 SELA0 LVTTL Channel A0 Output Select, LVTTL Input. See Table 1. 29 ENA0 LVTTL Channel A0 Output Enable. LVTTL low input powers down A0 output stage. 30 DA1 CML Input Channel A1 Positive Signal Input. 31 DA1 CML Input Channel A1 Negative Signal Input. 32 ENA1 LVTTL − EP GND Channel A1 Output Select, LVTTL Input. See Table 1. Channel A1 Output Enable. LVTTL low input powers down A1 output stage. Exposed Pad. The thermally exposed pad (EP) on package bottom (see case drawing) must be attached to a heat−sinking conduit. The exposed pad must be soldered to the circuit board GND for proper electrical and thermal operation. http://onsemi.com 3 NB4N840M Table 3. ATTRIBUTES Characteristics ESD Protection Value Human Body Model Machine Model Moisture Sensitivity (Note 1) > 2000 V > 110 V QFN−32 Flammability Rating Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 380 Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, refer to Application Note AND8003/D. Table 4. MAXIMUM RATINGS Symbol Parameter Condition 1 Rating Unit 3.8 V 3.8 V 3.8 V Static Surge 45 80 mA mA Output Current Continuous Surge 25 80 mA mA TA Operating Temperature Range QFN−32 −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) (Note 2) 0 lfpm 500 lfpm QFN−32 QFN−32 31 27 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) 2S2P (Note 3) QFN−32 12 °C/W Tsol Wave Solder <3 sec @ 260 C 260 °C VCC Positive Power Supply GND = 0 V VI Positive Input GND = 0 V VINPP Differential Input Voltage IIN Input Current Through Internal 50 W Resistor IOUT Condition 2 GND = VI = VCC |D − D| Pb−Free Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. JEDEC standard 51−6, multilayer board − 2S2P (2 signal, 2 power). 3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad. http://onsemi.com 4 NB4N840M Table 5. DC CHARACTERISTICS, CLOCK INPUTS, CML OUTPUTS VCC = 3.0 V to 3.6 V, TA = −40°C to +85°C Symbol Characteristic Min ICC Power Supply Current (All outputs enabled) Voutdiff CML Differential Output Swing (Note 4, Figures 5 and 12) VCMR (Note 6) CML Output Common Mode Voltage (Loaded 50 W to VCC) VID Differential Input Voltage (VIHD − VILD) 640 Typ Max Unit 130 170 mA 800 1000 mV VCC − 200 CML Single−Ended Input Voltage Range mV VCC − 800 VCC + 400 mV 300 1600 mV LVTTL CONTROL INPUT PINS VIH Input HIGH Voltage (LVTTL Inputs) VIL Input LOW Voltage (LVTTL Inputs) IIH Input HIGH Current (LVTTL Inputs) IIL 2000 mV 800 mV −10 10 mA Input LOW Current (LVTTL Inputs) −10 10 mA RTIN CML Single−Ended Input Resistance 42.5 50 57.5 W RTOUT Differential Output Resistance 85 100 115 W NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. CML outputs require 50 W receiver termination resistors to VCC for proper operation (Figure 10). 5. Input and output parameters vary 1:1 with VCC. 6. VCMR min varies 1:1 with VEE, VCMR max varies 1:1 with VCC. Table 6. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V, VEE = 0 V (Note 7, Figure 9) −40°C Symbol Characteristic fin ≤ 2 GHz fin ≤ 3 GHz fin ≤ 3.5 GHz VOUTPP Output Voltage Amplitude (@ VINPPmin) (See Figure 3) fDATA Maximum Operating Data Rate tPLH, tPHL Propagation Delay to Output Differential tSKEW Duty Cycle Skew (Note 8) Within−Device Skew (Figure 4) Device−to−Device Skew (Note 12) tJITTER RMS Random Clock Jitter (Note 10) Peak−to−Peak Data Dependent Jitter (Note 11) Min Typ 280 235 170 365 310 220 tr tf Output Rise/Fall Times @ 0.5 GHz (20% − 80%) Min Typ 280 235 170 365 310 220 85°C Max 3.2 Min Typ 280 235 170 365 310 220 Max Unit mV 3.2 Gb/s ps 140 fin v 3.2 GHz fin = 2.5 Gb/s fin = 3.2 Gb/s 225 340 5 5 20 0.15 7 7 Crosstalk−Induced RMS Jitter (Note 13) Input Voltage Swing/Sensitivity (Differential Configuration) (Note 9) Max 3.2 D/D to Q/Q VINPP 25°C 140 225 340 25 25 85 5 5 20 0.5 20 20 0.15 7 7 0.5 150 Q, Q 800 80 135 140 225 340 25 25 85 5 5 20 25 25 85 ps 0.5 20 20 0.15 7 7 0.5 20 20 ps 0.5 ps 800 mV 135 ps 0.5 150 800 80 135 150 80 NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 7. Measured by forcing VINPP (MIN) from a 50% duty cycle clock source. All loading with an external RL = 50 W to VCC. Input edge rates 40 ps (20% − 80%). 8. Duty cycle skew is measured between differential outputs using the deviations of the sum of Tpw− and Tpw+ @ 0.5 GHz. 9. VINPP (MAX) cannot exceed 800 mV. Input voltage swing is a single−ended measurement operating in differential mode. 10. Additive RMS jitter using 50% duty cycle clock input signal. 11. Additive peak−to−peak data dependent jitter using input data pattern with PRBS 223−1 and K28.5, VINPP = 400 mV. 12. Device to device skew is measured between outputs under identical transition @ 0.5 GHz. 13. Data taken on the same device under identical condition. http://onsemi.com 5 450 20 400 18 350 16 14 300 TIME (ps) OUTPUT VOLTAGE AMPLITUDE (mV) NB4N840M 250 200 150 12 10 8 Channel B 6 100 4 50 Channel A 2 0 0.05 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 −40 25 85 INPUT CLOCK FREQUENCY (GHz) TEMPERATURE (°C) Figure 3. Output Voltage Amplitude (VOUTPP) vs. Input Clock Frequency (fIN) at Ambient Temperature (Typ) Figure 4. Within−Device Skew vs. Temperature at VCC = 3.3 V 900 170 800 160 600 CURRENT (mA) VOLTAGE (mV) 700 500 400 300 150 140 130 200 120 100 25 110 −40 85 25 TEMPERATURE (°C) TEMPERATURE (°C) Figure 5. CML Differential Voltage vs. Temperature Figure 6. Supply Current vs. Temperature (All 4 Outputs Enabled) VOLTAGE (50 mV/div) VOLTAGE (50 mV/div) 0 −40 DDJ = 4 ps DDJ = 3 ps TIME (80.4 ps/div) TIME (62.5 ps/div) Figure 7. Typical Output Waveform at 2.488 Gb/s with PRBS 223−1 (Input Signal DDJ = 12 ps) Figure 8. Typical Output Waveform at 3.2 Gb/s with K28.5 (Input Signal DDJ = 14 ps) http://onsemi.com 6 85 NB4N840M Dx VINPP = VIH(DX) − VIL(DX) Dx Qx VOUTPP = VOH(QX) − VOL(QX) Qx tPHL tPLH Figure 9. AC Reference Measurement VCC 50 W 50 W Zo = 50 W Q D Receiver Device Driver Device Zo = 50 W Q D Figure 10. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8173/D) VCC 50 W VCC 50 W 50 W 50 W QX DX QX DX 16 mA GND Input GND GND Output Figure 11. CML Input and Output Structure http://onsemi.com 7 NB4N840M 640 mV MIN QX 320 mV MIN QX (QX − QX) QX 1000 mV MAX 500 mV MAX QX (QX − QX) Figure 12. CML Output Levels ORDERING INFORMATION Package Shipping NB4N840MMNG Device QFN32 (Pb−Free) 74 Units / Rail NB4N840MMNR4G QFN32 (Pb−Free) 1000 / Tape & Reel NB4N840MMNTWG QFN32 (Pb−Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 8 NB4N840M PACKAGE DIMENSIONS QFN32 5x5, 0.5P CASE 488AM ISSUE A A D PIN ONE LOCATION ÉÉ L L B L1 DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS E NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L L1 0.15 C 0.15 C A DETAIL B 0.10 C ÉÉ ÇÇ EXPOSED Cu TOP VIEW (A3) A1 MOLD CMPD DETAIL B ALTERNATE CONSTRUCTION 0.08 C SEATING PLANE C SIDE VIEW NOTE 4 RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 9 K D2 5.30 17 8 32X MILLIMETERS MAX MIN 0.80 1.00 −−− 0.05 0.20 REF 0.18 0.30 5.00 BSC 2.95 3.25 5.00 BSC 2.95 3.25 0.50 BSC 0.20 −−− 0.30 0.50 −−− 0.15 3.35 L 32X 0.63 E2 1 32 3.35 5.30 25 e e/2 32X BOTTOM VIEW b 0.10 M C A B 0.05 M C NOTE 3 0.50 PITCH 32X 0.30 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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