IMT17 Transistors General purpose transistor (isolated dual transistors) IMT17 zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (5) (4) (6) +0.2 1.6 −0.1 (4) 2.8±0.2 zFeatures 1) Two 2SA1036K chips in an SMT package. 2) Same size as SMT3 package, so same mounting machine can be used for both. 3) Transistor elements are independent, eliminating interference. 4) High collector current. IC = −500mA 5) Mounting cost, and area, are reduced by one half. (2) (1) +0.1 0.3−0.05 (3) +0.1 0.15−0.06 All terminals have same dimensions ROHM : SMT6 EIAJ : SC-74 zStructure Epitaxial planar type PNP silicon transistor (5) (6) 0 to 0.1 Tr1 Tr2 0.3 to 0.6 zApplications General purpose small signal amplifier (3) (2) (1) Abbreviated symbol: T17 zPackaging specifications Packaging type Part No. The following characteristics apply to both Tr1 and Tr2. Taping Code T110 Basic ordering unit (pieces) 3000 IMT17 zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol Unit Collector-base voltage VCBO −60 Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V V Collector current IC −500 mA Power dissipation Pd 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗ ∗ 200mW per element must not be exceeded. zElectrical characteristics(Ta=25°C) Parameter Symbol Typ. Max. Unit Collector-base breakdown voltage BVCBO −60 − − V IC= −100µA Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −100µA V= −30V Min. Conditions Collector cutoff current ICBO − − −0.1 µA Emitter cutoff current IEBO − − −0.1 µA V= −4V VCE(sat) − − −0.6 V IC/IB= −500mA/ −50mA hFE 120 − 390 − VCE= −3V, IC= −100mA fT − 200 − MHz Cob − 7 − pF Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ VCE= −5V, IE= 20mA, f= 100MHz VCB= −10V, IE= 0A, f= 1MHz ∗ Measured using pulse current. Rev.A 1/2 IMT17 Transistors zElectrical characteristic curves −5 −2 −1 −0.5 −0.2 −0.1 0 −0.2−0.4−0.6−0.8−1.0−1.2−1.4−1.6−1.8−2.0−2.2 −1mA 0 200 100 50 20 −1 −2 −0.2mA −0.3 −0.2 −0.1 Ta=100°C 25°C −0.05 −55°C −0.03 −0.02 −0.01 −1 −2 −5 −10 −20 −50 −100 −200 −500−1000 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (ΙΙ) 0 −5 VCE= −3V Ta=100°C 25°C 200 −55°C 100 50 −1 −2 −5 −10 −20 −50−100−200 −500 −1000 COLLECTOR CURRENT : IC (mA) 500 200 100 50 5 10 20 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current −10 Ta=25°C −1 −0.5 −0.2 −0.1 IC/IB=50 −0.05 20 10 −0.02 −1 −2 −5 −10 −20 −50 −100 −200 −500 Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) 1000 2 IB=0A −5 0 COLLECTOR CURRENT : IC (mA) Ta=25°C VCE= −5V 1 −0.5mA COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.5 DC current gain vs. collector current (ΙΙ) 0.5 −1.0mA Fig.3 Grounded emitter output characteristics (ΙΙ) 500 20 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −0.5 −4 1000 DC current gain vs. collector current ( Ι ) lC/lB=10 −3 Fig.2 Grounded emitter output characteristics ( Ι ) −5 −10 −20 −50 −100−200 −500−1000 −1.0 −2 −1.5mA −100 IB=0A −1 0 COLLECTOR CURRENT : IC (mA) Fig.4 −200 −0.3mA COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE VCE= −5V −3V −1V −0.4mA −0.1mA Ta=25°C 500 −300 −0.5mA −20 Grounded emitter propagation characteristics 1000 −0.6mA −40 −5.0mA −4.5mA −4.0mA −3.5mA −3.0mA −2.5mA −2.0mA −400 −0.7mA −60 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 −0.8mA −80 Ta=25°C COLLECTOR CURRENT : IC (mA) −10 −500 −0.9mA Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) −20 −100 50 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) VCE= −3V −200 Ta=100°C 25°C −100 −55°C −50 COLLECTOR CURRENT : IC (mA) −500 Ta=25°C f=1MHz IE=0A IC=0A 100 50 20 10 5 2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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