IMX25 Transistors General purpose transistor (isolated dual transistors) IMX25 zExternal dimensions (Unit : mm) 1.1 +0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 0.95 0.95 (6) 1.6 2.8±0.2 (5) +0.2 −0.1 (4) 0 to 0.1 zStructure Epitaxial planar type NPN silicon transistor All terminals have same dimensions The following characteristics apply to both Tr1 and Tr2. ROHM : SMT6 EIAJ : SC-74 (2) (1) +0.1 0.3 −0.05 (3) zAbsolute maximum ratings (Ta=25°C) Parameter +0.1 0.15 −0.06 0.3 to 0.6 zFeatures 1) Two 2SD2704K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent,eliminating interference. 4) Mounting cost and area can be cut in half. Abbreviated symbol: X25 zEquivalent circuit Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Power dissipation Pd 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (4) (5) (6) Tr1 Tr2 (3) ∗ (2) (1) ∗ 200mW per element must not be exceeded. zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 50 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage BVEBO 25 − − V IE=10µA Collector cutoff current ICBO − − 0.1 µA VCB=50V Emitter cutoff current IEBO − − 0.1 µA VEB=25V VCE(sat) − 50 100 V IC/IB=30mA/3mA hFE 820 − 2700 − VCE=2V, IC=4mA Parameter Collector-emitter saturation voltage DC current transfer ratio Conditions fT − 35 − MHz Output capacitance Cob − 3.9 − pF VCB=10V, IE=0A, f=1MHz Output On-resistance Ron − 0.7 − Ω IB=5mA, Vi=100mVrms, f=1kHz Transition frequency VCE=6V, IE=−4mA, f=10MHz 1/4 IMX25 Transistors zPackaging specifications Packaging type Part No. Taping Code T110 Basic ordering unit (pieces) 3000 IMX25 zElectrical characteristic curves 1000 Ta=125°C 100 25°C −40°C 0.1 0.1 0 0.2 0.4 0.6 0.8 1 Ta=125°C 100 25°C 0.1 Fig.1 Grounded emitter propagation characteristics ( Ι ) DC CURRENT GAIN : hFE 1000 Ta=25°C Ta= −40°C 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( 100 10 0.2 0.4 0.6 0.8 1 10000 1.2 IC/IB=10/1 1000 Ta=125°C 100 Ta=25°C 10 Ta= −40°C 1 1 10 100 COLLECTOR CURRENT : IC (mA) ) Ta=25°C Ta= −40°C 1000 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( ) Fig.2 Grounded emitter propagation characteristics ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE=6V Ta=125°C 1000 BASE TO EMITTER VOLTAGE : VBE(ON) (V) BASE TO EMITTER VOLTAGE : VBE(ON) (V) 10000 −40°C 10 0.1 0 1.2 VCE=2V Ta=125°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 10 10000 VCE=6V DC CURRENT GAIN : hFE VCE=2V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1000 10000 IC/IB=20/1 1000 Ta=125°C 100 Ta=25°C 10 Ta= −40°C 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current ( ) vs. collector current ( ) 2/4 IMX25 1000 Ta=125°C 100 Ta=25°C Ta= −40°C 10 1 1 10 100 1000 10000 IC/IB=10/1 Ta= −40°C 1000 Ta=125°C 100 1 COLLECTOR CURRENT : IC (mA) 100 1 Ta=25°C 10 100 1 1000 10 100 ON RESISTANCE : Ron (Ω) ON RESISTANCE : Ron (Ω) 10 1 10 1 100 Ta= −40°C 1000 Ta=125°C 100 1 100 Ta=25°C 10 100 1000 Fig.9 Base-emitter saturation voltage vs. collector current ( ) 100 Ta=25°C f=1MHz IE=0A 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.11 Gain bandwidth product vs. emitter current Ta= 25°C 1 Ta=25°C f=50MHz IE=0A EMITTER CURRENT : IE (mA) Fig.10 Base-emitter saturation voltage vs. collector current ( ) 0.1 See Fig.15 0.01 0.1 IC/IB=20/1 COLLECTOR CURRENT : IC (mA) Fig.8 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR CURRENT : IC (mA) 100 1000 TRANSITION FREQUENCY : fT (MHz) BASE SATURATION VOLTAGE : VBE(sat) (mV) Ta= −40°C Ta=125°C 100 10000 IC/IB=50/1 1000 10 10000 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 10000 Ta=25°C BASE SATURATION VOLTAGE : VBE(sat) (mV) IC/IB=50/1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 10000 BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Ta=25°C 10 1 0.1 See Fig.16 0.01 0.1 1 10 BASE CURRENT : IB (mA) BASE CURRENT : IB (mA) Fig.13 Output-on resistance vs. base current ( ) Fig.14 Output-on resistance vs. base current ( ) 100 3/4 IMX25 Transistors zRon measurement circuit RL=1kΩ RL=1kΩ Input Vi 100mV(rms) 1V(rms) f=1kHz V Output v0 IB Ron= v0 vi−v0 ×RL Fig.15 Ron measurement circuit ( ) Input Vi 100mV(rms) 1V(rms) f=1kHz V Output v0 IB Ron= v0 vi−v0 ×RL Fig.16 Ron measurement circuit ( ) 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1