EMX26 Transistors General purpose transistors (dual transistors) EMX26 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SD2654 chips in a EMT package. 2) Mounting possible with EMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. (2) 1.2 1.6 0.5 0.5 1.0 1.6 (5) (6) 0.13 (3) (4) (1) 0.5 0.22 EMX26 Each lead has same dimensions ROHM : EMT6 zStructure Epitaxial planar type NPN silicon transistor Abbreviated symbol : X26 The following characteristics apply to both Tr1 and Tr2. zEquivalent circuit EMX26 (3) (2) (1) Tr1 Tr2 (4) (5) (6) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 12 V Parameter Collector current IC 0.15 0.2 Power dissipation Junction temperature Storage temperature Pd A (DC) A (Pulse) ∗1 150 (TOTAL) mW Tj 150 °C Tstg −55 to +150 °C ∗2 ∗1 Single pulse Pw=100ms. ∗2 120mW per element must not be exceeded. 1/3 EMX26 Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Symbol Min. Typ. Max. Unit BVCBO 60 − − V BVCEO 50 − − V BVEBO 12 − V IE=10µA ICBO − − − 0.3 µA VCB=50V VEB=12V IEBO − − 0.3 VCE(sat) − − 0.3 µA V hFE 820 2700 − Transition frequency fT − − 250 − MHz Output capacitance Cob − 3.5 Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio ∗ Measured using pulse current. ∗− Conditions IC=10µA IC=1mA IC/IB=50mA/5mA ∗ VCE/IC=5V/1mA ∗ ∗ VCE=5V, IE=−10mA, f=100MHz VCB=5V, IE=0A, f=1MHz pF zPackaging specifications Package Type Taping Code T2R Basic ordering unit (pieces) 8000 EMX26 zElectrical characteristic curves 0.6µA 0.8 0.4µA 0.4 0 0.2µA IB=0 0 0.1 0.2 0.3 100µA 80 50µA 40 0 0.5 0 Ta=25°C Measured using pulse current 4 8 IB=0 12 16 20 10 5 2 1 0.5 0.2 0 20 0°C 120 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics ( Ι ) Fig.2 Grounded emitter output characteristics ( ΙΙ ) Fig.3 Grounded emitter propagation characteristics Ta=25°C Measured using pulse current 5000 2000 VCE=10V 1000 500 5V 200 3V 100 50 5000 Ta=100°C VCE=5V Measured using pulse current 25°C 2000 1000 −25°C 500 200 100 50 20 20 10 0.2 10000 0.5 1 2 5 10 20 50 100 200 10 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 10000 DC CURRENT GAIN : hFE 0.4 150µA VCE=5V 100 25°C −25°C 0.8µA 500µA 160 450µA 400µA 350µA 300µA Ta=10 1.2 1.0µA µA 250 A 200µ COLLECTOR CURRENT : IC (mA) 2.0µA 1.8µA 1.6µA 1.4µA COLLECTOR CURRENT : IC (mA) 1.2µA 1.6 200 200 Ta=25°C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 2.0 1000 Ta=25°C 500 200 100 IC / IB=50 50 20 10 20 10 5 2 1 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) 2/3 EMX26 IC / IB=10 500 200 100 Ta=100°C 50 25°C 20 10 −25°C 5 2 1 0.2 0.5 1 2 5 10 20 50 100 200 Ta=25°C 5000 2000 IC/IB=10 20 1000 500 50 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 10000 IC/IB=10 5000 Ta= −25°C 2000 25°C 1000 500 100°C 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Fig.8 Base-emitter saturation voltage vs. collector current ( Ι ) Fig.9 Base-emitter saturation voltage vs. collector current ( ΙΙ ) 500 200 100 50 20 10 5 Ta=25°C VCE=5V 2 Measured 1 using pulse current −1 −2 −5 −10 −20 −50 −100−200 −500 −1000 100 1000 Ta=25°C f=1MHz IE=0A 500 200 20 100 10 50 20 5 2 10 1 5 0.5 2 0.2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Ta=25°C f=1kHz Vi=100mV(rms) RL=1kΩ 50 Ron : (Ω) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 TRANSITION FREQUENCY : fT (MHz) 10000 COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) 1000 COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 EMITTER CURRENT : IE (mA) COLLRCTOR TO BASE VOLTAGE : VCB (V) IB (mA) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Fig.12 Output on resistance vs. base current 5 10 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1