2SC2411K Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K zExternal dimensions (Units : mm) 2SC2411K 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 1.6+0.2 −0.1 (1) zStructure Epitaxial planar type NPN silicon transistor 0 ∼ 0.1 2.8±0.2 zFeatures 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. All terminals have same dimensions +0.1 0.15 −0.06 0.4 +0.1 −0.05 0.3 ~ 0.6 (3) (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : C∗ ∗ Denotes hFE zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current IC 0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * * PC must not be exceeded. Rev.A 1/3 2SC2411K Transistors zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 40 − − V IC = 100µA Collector-emitter breakdown voltage BVCEO 32 − − V IC = 1mA Emitter-base breakdown voltage BVEBO 5 − − V IE = 100µA Collector cutoff current ICBO − − 1 µA VCB = 20V Emitter cutoff current IEBO − − 1 µA VEB = 4V Parameter hFE 120 − 390 − VCE = 3V, IC = 100mA VCE (sat) − − 0.6 V IC/IB = 500mA/50mA fT − 250 − MHz Cob − 6.5 − pF DC current transfer ratio Collector-emitter saturation voltage Conditions Transition frequency Output capacitance VCE = 5V, IE = −20mA, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz zPackaging Specifications and hFE Package Type hFE 2SC2411K QR Taping Code T146 Basic ordering unit (pieces) 3000 hFE values are classified as follows: Item Q R hFE 120 to 270 180 to 390 COLLECTOR CURRENT : IC (mA) 500 100 VCE=6V COLLECTOR CURRENT : IC (mA) 1000 200 100 Ta=100°C 50 −25°C 80°C 25°C 20 10 −55°C 5 2 1 0.5 Ta=25°C A 0.45m A 0.40m mA 0.50 0.35mA 0.30mA 0.25mA 50 0.20mA 0.15mA 0.10mA 0.05mA 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 0 0 1 2 3 IB=0A 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 1 Ta=25°C lC/lB=10 0.5 0.2 0.1 0.05 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current Rev.A 2/3 2SC2411K 1000 Ta=25°C lC/lB=10 VCE=3V 500 0.5 0.2 0.1 0.05 Ta=100°C 75°C 50°C 100 25°C 0°C °C 50 −25 °C −50 200 20 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) 0.5 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 10 0.1 0.2 500 TRANSITION FREQUENCY : fT (MHz) 1 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors Ta=25°C VCE=5V 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 EMITTER CURRENT : IE (mA) Fig. 6 Gain bandwidth product vs. emitter current Ta=25°C f=1MHz IE=0A IC=0A 50 Cib 20 Co 10 b 5 2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1