General Purpose Transistor MMBT2907-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -Device is designed as a general purpose 3 amplifier and switching. 0.056 (1.40) 0.047 (1.20) 1 2 0.083 (2.10) Collector 3 0.006 (0.15) 0.002 (0.05) 0.066 (1.70) 0.103 (2.60) 0.086 (2.20) 0.044 (1.10) 0.035 (0.90) 1 Base 0.006 (0.15) max 2 Emitter 0.020 (0.50) 0.013 (0.35) 0.007 (0.20) min Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Max Unit VCBO -60 V Power dissipatioin PCM 0.3 W Collector current-Continuous ICM -0.6 A Parameter Collector-Base voltage Storage temperature and junction temperature Min TSTG , TJ -55 o +150 C Electrical Characteristics (at TA=25°C unless otherwise noted) Conditions Symbol Min Collector-Base breakdown voltage IC=-10µA, IE=0 V(BR)CBO -60 V Collector-emitter breakdown voltage IC=-10mA, IB=0 V(BR)CEO -40 V Emitter-base breakdown voltage IE=-10µA, IC=0 V(BR)EBO -5 V Collector cut-off current VCB=-50V, IE=0 ICBO -0.1 µA Collector cut-off current VCB=-35V, IB=0 ICEO -0.1 µA VEB=-3V, IC=0 IEBO -0.1 µA VCE=-10V, IC=-150mA hFE(1) 100 VCE=-10V, IC=-1mA hFE(2) 50 Collector-emitter saturation voltage IC=-500mA, IB=-50mA VCE(sat) -1 V Base-emitter saturation voltage IC=-500mA, IB=-50mA VBE(sat) -2 V Parameter Emitter cut-off current Max Unit 300 DC current gain VCE=-20V, IC=-50mA fT Transition frequency 200 Mhz F=100MHz REV:A QW-BTR04 Page 1