QW-BTR04 MMBT2907

General Purpose Transistor
MMBT2907-G (PNP)
RoHS Device
Features
SOT-23
-Epitaxial planar die construction
0.119 (3.00)
0.110 (2.80)
-Device is designed as a general purpose
3
amplifier and switching.
0.056 (1.40)
0.047 (1.20)
1
2
0.083 (2.10)
Collector
3
0.006 (0.15)
0.002 (0.05)
0.066 (1.70)
0.103 (2.60)
0.086 (2.20)
0.044 (1.10)
0.035 (0.90)
1
Base
0.006 (0.15) max
2
Emitter
0.020 (0.50)
0.013 (0.35)
0.007 (0.20) min
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Max
Unit
VCBO
-60
V
Power dissipatioin
PCM
0.3
W
Collector current-Continuous
ICM
-0.6
A
Parameter
Collector-Base voltage
Storage temperature and junction temperature
Min
TSTG , TJ
-55
o
+150
C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Conditions
Symbol
Min
Collector-Base breakdown voltage
IC=-10µA, IE=0
V(BR)CBO
-60
V
Collector-emitter breakdown voltage
IC=-10mA, IB=0
V(BR)CEO
-40
V
Emitter-base breakdown voltage
IE=-10µA, IC=0
V(BR)EBO
-5
V
Collector cut-off current
VCB=-50V, IE=0
ICBO
-0.1
µA
Collector cut-off current
VCB=-35V, IB=0
ICEO
-0.1
µA
VEB=-3V, IC=0
IEBO
-0.1
µA
VCE=-10V, IC=-150mA
hFE(1)
100
VCE=-10V, IC=-1mA
hFE(2)
50
Collector-emitter saturation voltage
IC=-500mA, IB=-50mA
VCE(sat)
-1
V
Base-emitter saturation voltage
IC=-500mA, IB=-50mA
VBE(sat)
-2
V
Parameter
Emitter cut-off current
Max
Unit
300
DC current gain
VCE=-20V, IC=-50mA
fT
Transition frequency
200
Mhz
F=100MHz
REV:A
QW-BTR04
Page 1