C2611(NPN) TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.900 4.100 3.000 3. BASE 3.200 10.60 0 11.00 0 3 0.000 0.300 2 1 Features 2.100 2.300 power switching applications 1.170 1.370 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 15.30 0 15.70 0 0.660 0.860 0.450 0.600 2.290 TYP 4.480 4.680 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μ A , IC=0 7 V Collector cut-off current ICBO VCB= 600V, IE=0 100 μA Collector cut-off current ICEO VCE= 400V, IB=0 200 μA Emitter cut-off current IEBO VEB=7V, IC=0 100 μA hFE(1) VCE=20V, IC=20mA 10 hFE(2) VCE=10V, IC= 0.25mA 5 DC current gain Collector-emitter saturation voltage VCE(sat) VBE(sat) Base-emitter saturation voltage Transition frequency fT Fall time tS Storage time tf CLASSIFICATION OF 40 IC= 50mA, IB= 10mA 0.5 V IC= 100mA, IB= 20mA 0.6 V IC= 50mA, IB=10mA 1.2 V VCE=20V,IC=20mA f = 1MHz 8 MHz IC=50mA, IB1=-IB2=5mA, VCC=45V 0.3 μs 1.5 μs hFE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 C2611(NPN) TO-126 Transistor