JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC347 TRANSISTOR (NPN) 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.3 W Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA Collector cut-off current ICEO VCE=35V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=5V, IC=2mA Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 1 V Transition frequency fT VCE=5V,IC=10mA,f=30MHz 40 125 450 MHz A,Dec,2010