COMCHIP SMD Switching Diode SMD Diodes Specialist CDST116-G RoHS Device Features SOT-23 0.119(3.00) -Low leakage current applications. 0.110(2.80) 3 -Medium speed switching times. 0.056(1.40) 0.047(1.20) Polarity: 1 2 0.006(0.15) 0.083(2.10) 0.002(0.05) 0.066(1.70) 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 0.006(0.15) max 0.020(0.50) 0.007(0.20) min 0.013(0.35) Marking: JV Dimensions in inches and (millimeter) O Maximum Ratings (at Ta=25 C unless otherwise noted) Symbol Value Unit V RRM V RWM VR t 75 V V Forward continuous current I FM 215 mA Power dissipation PD 250 mW Junction temperature TJ 150 O C -55 to +150 O C Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Storage temperature T STG O Electrical Characteristics (at Ta=25 C unless otherwise noted) Parameter Reverse breakdown voltage Conditions I R =100μA Symbol Min Typ. Max Unit V (BR)R 75 V V V I F =1mA V F1 0.9 V I F =10mA V F2 1 V I F =50mA V F3 1.1 V I F =150mA V F4 1.25 V 5 μA Forward voltage Reverse current V R =75V IR Capacitance between terminals V R =0V, f=1MHz CT Reverse recovery time I F =I R =10mA, Irr=0.1×I R , RL=100Ω t rr 2 pF 3 nS REV:A QW-B0029 Page 1 COMCHIP SMD Switching Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDST116-G) Fig.2 Forward Voltage Characteristics Fig.1 Forward Current Derating Curve 100 0 es T j= 2 5 OC , Ma xim um v a lu ical va 100 0 0 200 100 1 0.4 Ambient Temperature ( OC) 0.8 1.2 1.6 V F , Forward Voltage (V) Fig.3 Reverse Characteristics Fig.4 Diode Capacitance Characteristics 100 2 C T , Diode Capacitance (pF) I R , Reverse Current (nA) T j= 2 5 O C , Typ 5 0 OC 200 T j= 1 200 lu e s 300 I F , Forward Current (mA) I F , Forward Current (mA) 300 10 1 0.1 0.01 0.001 1 f=1MHz O T J =25 C 0 0 50 100 150 200 O T J , Junction Temperature ( C) 0 5 10 15 20 V R , Reverse Voltage (V) REV:A QW-B0029 Page 2