ROHM US5U38

US5U38
Transistor
2.5V Drive Pch+SBD MOSFET
US5U38
zDimensions (Unit : mm)
zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE
TUMT5
2.0
zFeatures
1) The US5U38 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.
2) Low on-resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
0.2Max.
1.3
Abbreviated symbol : U38
zEquivalent circuit
zApplications
Switching
(5)
(4)
∗2
zPackaging specifications
Package
Type
Taping
Code
TR
Basic ordering unit (pieces)
∗1
3000
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
US5U38
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗3
Limits
−20
±12
±1.0
±4.0
−0.4
−4.0
150
0.7
Unit
V
V
A
A
A
A
°C
W / ELEMENT
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
VR
IF
IFSM
Tj
PD
25
20
0.7
3.0
150
0.5
V
V
A
A
°C
W / ELEMENT
<MOSFET AND Di>
Power dissipation
Range of storage temperature
PD ∗3
Tstg
1.0
−55 to +150
W / TOTAL
°C
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
∗2
∗3
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
1/5
US5U38
Transistor
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min.
−
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −20
IDSS
−
Zero gate voltage drain current
VGS (th) −0.7
Gate threshold voltage
−
∗
Static drain-source on-state
−
RDS (on)
resistance
−
∗
0.7
Yfs
Forward transfer admittance
−
Ciss
Input capacitance
−
Coss
Output capacitance
−
Crss
Reverse transfer capacitance
∗
−
td (on)
Turn-on delay time
∗
−
tr
Rise time
∗
−
td (off)
Turn-off delay time
∗
−
tf
Fall time
−
Qg ∗
Total gate charge
−
Qgs ∗
Gate-source charge
−
Qgd ∗
Gate-drain charge
Typ.
−
−
−
−
280
310
570
−
150
20
20
9
8
25
10
2.1
0.5
0.5
Max.
±10
−
−1
−2.0
390
430
800
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±12V, VDS=0V
ID=−1mA, VGS=0V
VDS=−20V, VGS=0V
VDS=−10V, ID=−1mA
ID=−1A, VGS=−4.5V
ID=−1A, VGS=−4.0V
ID=−0.5A, VGS=−2.5V
VDS=−10V, ID=−0.5A
VDS=−10V
VGS=0V
f=1MHz
ID=−0.5A
VDD −15V
VGS=−4.5V
RL 30Ω
RG=10Ω
ID=−1A, VDD −15V
VGS=−4.5V
RL 15Ω, RG=10Ω
∗ Pulsed
<Body diode (source−drain)>
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
Unit
VSD
−
−
−1.2
V
Symbol
Min.
−
−
Typ.
−
−
Max.
0.49
200
Unit
V
µA
Conditions
IS=−0.4A, VGS=0V
<Di >
Parameter
Forward voltage
Reverse current
VF
IR
Conditions
IF=0.7A
VR=20V
2/5
US5U38
Transistor
10000
STATIC DRAIN−SOURCE ON−STATE RESISTANCE
: RDS(on)[mΩ]
10
1
Ta=125°C
75°C
25°C
−25°C
0.01
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
GATE−SOURCE VOLTAGE : -VGS[V]
Ta=125°C
75°C
25°C
−25°C
0.1
1
10
CAPACITANCE : C [pF]
REVERSE DRAIN CURRENT : −IS[A]
Ta=125°C
75°C
25°C
−25°C
1
10
Fig.3 Static Drain−Source On−State
Resistance vs.Drain Current ( ΙΙ )
ID=−0.5A
−1A
750
Ta=25 C
Pulsed
1000
500
250
0
0.1
DRAIN CURRENT : −ID[A]
10000
0
2
4
6
8
10
12
Ta=25 C
f=1MHZ
VGS=0V
VGS=−2.5V
−4.0V
−4.5V
100
0.01
0.1
1
Fig.6 Static Drain−Source On−State
Resistance vs.Drain Current
10000
Ta=25°C
VDD=−15V
VGS=−4.5V
RG=10Ω
Pulsed
1000
Ciss
100
10
DRAIN CURRENT : −ID[A]
Fig.5 Static Drain−Source On−State
Resistance vs.Gate−Source Voltage
1000
VGS=0V
Pulsed
0.1
0.01
0.0
100
0.01
GATE−SOURCE VOLTAGE : −VGS[V]
Fig.4 Static Drain−Source On−State
Resistance vs.Drain−Current ( ΙΙΙ )
1
10
Ta=25°C
Pulsed
DRAIN CURRENT : −ID[A]
10
1
1000
VGS=−2.5V
Pulsed
100
0.01
0.1
DRAIN CURRENT : −ID[A]
STATIC DRAIN−SOURCE ON−STATE RESISTANCE
: RDS(on)[mΩ]
STATIC DRAIN−SOURCE ON−STATE RESISTANCE
: RDS(on)[mΩ]
10000
100
0.01
Ta=125°C
75°C
25°C
−25°C
1000
Fig.2 Static Drain−Source On−State
Resistance vs.Drain Current ( Ι )
Fig.1 Typical Transfer Characteristics
1000
Ta=125°C
75°C
25°C
−25°C
1000
VGS=−4V
Pulsed
STATIC DRAIN-SOURCE ON−STATE RESISTANCE
: RDS(on)[mΩ]
0.1
10000
VGS=−4.5V
Pulsed
SWITCHING TIME : t [ns]
DRAIN CURRENT : −ID (A)
VDS=−10V
Pulsed
STATIC DRAIN−SOURCE ON−STATE RESISTANCE
: RDS(on)[mΩ]
zElectrical characteristic curves
tf
100
td(off)
10
td(on)
tr
Crss
Coss
0.2
0.4
0.6
0.8
1.0
1.2
1.4
SOURCE−DRAIN VOLTAGE : −VSD[V]
Fig.7 Reverse Drain Current
vs. Source-Drain Current
1.6
10
0.01
0.1
1
10
100
DRAIN−SOURCE VOLTAGE : −VDS[V]
Fig.8 Typical Capactitance
vs.Drain−Source Voltage
1
0.01
0.1
1
10
DRAIN CURRENT : −ID[A]
Fig.9 Switching Characteristics
3/5
US5U38
Transistor
100000
Pulsed
3
2
Ta=25 C
VDD=−15V
ID=−1A
RG=10Ω
Pulsed
1
0
0
0.5
1
1.5
2
2.5
3
pulsed
10000
Ta = 75℃
1000
Ta = 25℃
100
10
Ta= - 25℃
1
0.1
0.1
Ta = 125℃
Ta = 75℃
Ta = 25℃
0.01
Ta= - 25℃
0.001
0.01
0
TOTAL GATE CHARGE : Qg[nC]
1
Ta = 125℃
FORWARD CURRENT : IF(A)
4
REVERSE CURRENT : IR [uA]
GATE-SOURCE VOLTAGE: -VGS [V]
5
5
10
15
20
25
0
REVERSE VOLTAGE : VR [V]
0.1
0.2
0.3
0.4
0.5
0.6
FORW ARD VOLTAGE : VF(V)
Fig.10 Dynamic Input Characteristics
Fig.11 Reverse Current vs. Reverse Voltage
Fig.12 Forward Current vs. Forward Voltage
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
4/5
US5U38
Transistor
zMeasurement circuits
Pulse Width
VGS
10%
50%
50%
90%
10%
10%
ID
VGS
VDS
D.U.T.
RG
90%
90%
VDS
RL
VDD
td(on)
tr
tf
td(off)
ton
toff
Fig.14 Switching Waveforms
Fig.13 Switching Time Measurement Circuit
VG
Qg
VGS
VGS
ID
VDS
Qgs
IG(Const)
RG
D.U.T.
Qgd
RL
VDD
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveforms
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
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Appendix1-Rev2.0