POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF527 FINAL SPECIFICATION Repetitive voltage up to Mean on-state current Surge current Turn-off time 1400 1230 15 25 V A kA µs apr 07 - ISSUE : 0 Symbol Characteristic Tj [°C] Conditions BLOCKING Value Unit V RRM Repetitive peak reverse voltage 125 1400 V V RSM Non-repetitive peak reverse voltage 125 1500 V V DRM Repetitive peak off-state voltage 125 1400 V I RRM Repetitive peak reverse current V=VRRM 125 65 mA I DRM Repetitive peak off-state current V=VDRM 125 65 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, doub le side cooled 1230 I T (AV) Mean on-state current 180° sin, 1 kHz,T h=55°C, doub le side cooled 1110 A I TSM Surge on-state current, non repetitive sine wave, 10 ms 14,6 kA 1066 x1E3 A²s I² t I² t without reverse voltage V T On-state voltage On-state current = V T(TO) T r 125 2000 A A 125 1,92 V Threshold voltage 125 1,40 V On-state slope resistance 125 0,260 mohm SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 2000 A, gate 20V 10 ohm 125 800 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 20V, 10 ohm , tr=1 µs 25 1,5 µs tq Circuit commutated turn-off time 125 25 µs 125 650 µC di/dt = dV/dt = Q rr Reverse recovery charge A/µs, I= 1000 I = 800 A 20 200 V/µs , up to 75% di/dt = 60 A/µs, I= 1000 I = 1000 A VR = 50 V A VDRM A I rr Peak reverse recovery current 230 A I H Holding current, typical VD=5V, gate open circuit 25 80 mA I L Latching current, typical VD=5V, tp=30µs 25 230 mA GATE V GT Gate trigger voltage VD=5V 25 3,5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) 25 5 V P GM Peak gate power dissipation 25 150 W P G(AV) Average gate power dissipation 25 3 W R th(j-h) Thermal impedance, DC 26 °C/kW T j Operating junction temperature -30 / 125 °C Mounting force 14.0 / 17.0 kN Pulse width 100 µs MOUNTING F Junction to heatsink, double side cooled Mass 500 tq code ORDERING INFORMATION : ATF527 S 14 M standard specification tq code VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs g ATF527 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation apr 07 - ISSUE : 0 SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 1400 1000 A 1200 500 A Qrr [µC] 1000 800 250 A 600 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C 800 1000 A 500 A 600 Irr [A] 250 A 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr tb Vr ATF527 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation apr 07 - ISSUE : 0 SURGE CHARACTERISTIC Tj = 125 °C 4000 16 3500 14 3000 12 2500 10 ITSM [kA] On-state Current [A] ON-STATE CHARACTERISTIC Tj = 125 °C 2000 1500 8 6 1000 4 500 2 0 0 0,6 1,1 1,6 2,1 2,6 1 10 On-state Voltage [V] n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 35 30 Zth j-h [°C/kW] 25 20 15 10 5 0 0,001 0,01 0,1 1 t[s] 10 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO S.p.A reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100