ATG777

POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. +39 010 8599400 - Fax +39 010 8682006
Sales Office:
Tel. +39 010 8599400 - Fax +39 010 8681180
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
GATE TURN-OFF THYRISTOR
ATG777
FINAL SPECIFICATION
Repetitive voltage up to
Mean on-state current
Controllable on-state current
Surge on-state current
4500
890
2400
17
V
A
A
kA
nov 06 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
°C
Value
min
typ
Unit
max
BLOCKING
V
DRM
Repetitive peak off-state voltage
4500
V
V
RRM
Repetitive peak reverse voltage
16
V
I
DRM
Repetitive peak off-state current
VD=VDRM
100
mA
I
RRM
Repetitive peak reverse current
VR=VRRM
Critical rate of rise of off-state voltage, min
Linear ramp up to 50% VDRM, shorted G-K
(dv/dt) crit
RGK<2 ohm
125
10
mA
1000
V/uS
890
A
CONDUCTING
I
T (AV)
Mean on-state current
180° sin, 50 Hz,Th=75°C, doubl e side cooled
I
TSM
Surge on-state current
sine wave, 10 ms, no reverse voltage
I² t
I² t for fusing coordination
10ms, no reverse voltage
V
T
On-state voltage
On-state current =
V
T(TO)
Threshold voltage
T
On-state slope resistance
r
2000 A
125
17
kA
2
3
1445 A s10
25
2,73
V
125
1,51
V
0,51 mohm
SWITCHING ON
Gate controlled turn on time
IT = 2500A; di/dt = 350A/uS
Delay time
IGM > 50A; diGR/dt = 25A/uS
E on
Turn-on switching energy
VD = 2500V, CS = 4uF; RS = 5 ohm
(di/dt) crit
Critical rate of rise of on-state current
IT = 2400A, IGM = 50A, diGR/dt = 25A/uS
t gt
t d
125
10
uS
3
uS
400
A/uS
2400
30
A
uS
28
uS
2,8
125
J
SWITCHING OFF
I TCM
t gq
t s
Controllable peak on-state current
Gate controlled turn-off time
ITC = ITCM, VDM =3500V
Storage time
CS = 4uF, diGR/dt = 40 A/uS
E off
I RG
Turn-off switching energy
Ls = 0.28uH
Turn-off reverse gate current
650
A
V DSP
Spike voltage
850
V
125
8,5
J
TRIGGERING
V
GT
Gate trigger voltage
I
GT
Gate trigger current
V
RGM
Peak reverse gate voltage
I
RGM
Peak reverse leakage gate current
DISSIPATION
R th(j-h)
Thermal resistance junction to heatsink d.c.
T vj
T stg
VD=24V
VRG = VRGM
25
1,5
V
25
3,0
A
25
16
V
125
10
mA
Double side cooled
Virtual junction temperature
Storage temperature
-40
16
°C/kW
125
°C
150
°C
35
kN
MOUNTING
W
Weight
F
Mounting force
1300
31
ORDERING INFORMATION : ATG777 S 45
standard specification
VDRM/100
/
g
ATG777 GATE TURN-OFF THYRISTOR
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
nov 06 - ISSUE : 03
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
3000
18
16
2500
2000
12
ITSM [kA]
On-state Current [A]
14
1500
1000
10
8
6
4
500
2
0
0
0,6
1,6
2,6
3,6
1
10
On-state Voltage [V]
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
20
18
16
Zth j-h [°C/kW]
14
12
10
8
6
4
2
0
0,001
0,01
0,1
t[s]
1
10
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO Spa reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
100