POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. +39 010 8599400 - Fax +39 010 8682006 Sales Office: Tel. +39 010 8599400 - Fax +39 010 8681180 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation GATE TURN-OFF THYRISTOR ATG777 FINAL SPECIFICATION Repetitive voltage up to Mean on-state current Controllable on-state current Surge on-state current 4500 890 2400 17 V A A kA nov 06 - ISSUE : 03 Symbol Characteristic Conditions Tj °C Value min typ Unit max BLOCKING V DRM Repetitive peak off-state voltage 4500 V V RRM Repetitive peak reverse voltage 16 V I DRM Repetitive peak off-state current VD=VDRM 100 mA I RRM Repetitive peak reverse current VR=VRRM Critical rate of rise of off-state voltage, min Linear ramp up to 50% VDRM, shorted G-K (dv/dt) crit RGK<2 ohm 125 10 mA 1000 V/uS 890 A CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz,Th=75°C, doubl e side cooled I TSM Surge on-state current sine wave, 10 ms, no reverse voltage I² t I² t for fusing coordination 10ms, no reverse voltage V T On-state voltage On-state current = V T(TO) Threshold voltage T On-state slope resistance r 2000 A 125 17 kA 2 3 1445 A s10 25 2,73 V 125 1,51 V 0,51 mohm SWITCHING ON Gate controlled turn on time IT = 2500A; di/dt = 350A/uS Delay time IGM > 50A; diGR/dt = 25A/uS E on Turn-on switching energy VD = 2500V, CS = 4uF; RS = 5 ohm (di/dt) crit Critical rate of rise of on-state current IT = 2400A, IGM = 50A, diGR/dt = 25A/uS t gt t d 125 10 uS 3 uS 400 A/uS 2400 30 A uS 28 uS 2,8 125 J SWITCHING OFF I TCM t gq t s Controllable peak on-state current Gate controlled turn-off time ITC = ITCM, VDM =3500V Storage time CS = 4uF, diGR/dt = 40 A/uS E off I RG Turn-off switching energy Ls = 0.28uH Turn-off reverse gate current 650 A V DSP Spike voltage 850 V 125 8,5 J TRIGGERING V GT Gate trigger voltage I GT Gate trigger current V RGM Peak reverse gate voltage I RGM Peak reverse leakage gate current DISSIPATION R th(j-h) Thermal resistance junction to heatsink d.c. T vj T stg VD=24V VRG = VRGM 25 1,5 V 25 3,0 A 25 16 V 125 10 mA Double side cooled Virtual junction temperature Storage temperature -40 16 °C/kW 125 °C 150 °C 35 kN MOUNTING W Weight F Mounting force 1300 31 ORDERING INFORMATION : ATG777 S 45 standard specification VDRM/100 / g ATG777 GATE TURN-OFF THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation nov 06 - ISSUE : 03 ON-STATE CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 3000 18 16 2500 2000 12 ITSM [kA] On-state Current [A] 14 1500 1000 10 8 6 4 500 2 0 0 0,6 1,6 2,6 3,6 1 10 On-state Voltage [V] n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 20 18 16 Zth j-h [°C/kW] 14 12 10 8 6 4 2 0 0,001 0,01 0,1 t[s] 1 10 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO Spa reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100