POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - Fax + 39 010 8681180 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation PHASE CONTROL THYRISTOR AT908 Repetitive voltage up to Mean on-state current Surge current 800 V 6821 A 95 kA FINAL SPECIFICATION Sept. 13 - Issue: 5 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 140 800 V V RSM Non-repetitive peak reverse voltage 140 900 V V DRM Repetitive peak off-state voltage 140 800 V I RRM Repetitive peak reverse current V=VRRM 140 300 mA I DRM Repetitive peak off-state current V=VDRM 140 300 mA I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 6821 A I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 5553 A I TSM CONDUCTING Surge on-state current sine wave, 10 ms I² t I² t VR=50%VRRM V T On-state voltage On-state current = V T(TO) Threshold voltage 140 0,85 V T On-state slope resistance 140 0,045 mohm r 140 95,0 45125 x1E3 9000 A 25 1,26 kA A²s V SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM, gate 10V 5ohm 140 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 140 1000 V/µs td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=5 µs 25 tq Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM Q RR Reverse recovery charge di/dt=-20 A/µs, I= 4000 A . µs 500 140 . µs µC I RR Peak reverse recovery current VR= 50 V I H Holding current, typical VD=5V, gate open circuit 25 . 500 mA A I L Latching current, typical VD=12V, tp=30µs 25 3000 mA GATE V GT Gate trigger voltage VD=12V 25 3,5 V I GT Gate trigger current VD=12V 25 400 mA VD=VDRM 140 V GD Non-trigger gate voltage, min. 0,4 V V FGM Peak gate voltage (forward) 10 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) P GM Peak gate power dissipation P G Average gate power dissipation R th(j-c) Thermal impedance, DC Junction to case, double side cooled R th(c-h) Thermal impedance Case to heatsink, double side cooled T F j Operating junction temperature Mounting force Mass Pulse width 100 µs 10 V 150 W 3 W MOUNTING °C/kW 1,0 °C/kW -30 / 140 80/ 100 3000 ORDERING INFORMATION : AT908 S 08 standard specification 6,0 VDRM&VRRM/100 Page 1 of 4 °C kN g POSEICO AT908 PHASE CONTROL THYRISTOR FINAL SPECIFICATION POSEICO SPA POwer SEmiconductors Italian COrporation Sept. 13 - Issue: 5 DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 160 140 120 100 80 60 30° 60° 90° 120° 180° DC 40 0 2000 4000 6000 8000 10000 IF(AV) [A] PF(AV) [W] 14000 DC 12000 120° 60° 10000 180° 90° 30° 8000 6000 4000 2000 0 0 2000 4000 6000 IF(AV) [A] Page 2 of 4 8000 10000 POSEICO AT908 PHASE CONTROL THYRISTOR POSEICO SPA POwer SEmiconductors Italian COrporation FINAL SPECIFICATION Sept. 13 - Issue: 5 DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 160 140 120 100 80 60 60° 30° 90° 120° 180° 40 0 2000 4000 6000 8000 IF(AV) [A] PF(AV) [W] 12000 120° 180° 90° 10000 60° 8000 30° 6000 4000 2000 0 0 2000 4000 IF(AV) [A] Page 3 of 4 6000 8000 POSEICO AT908 PHASE CONTROL THYRISTOR FINAL SPECIFICATION POSEICO SPA POwer SEmiconductors Italian COrporation Sept. 13 - Issue: 5 SURGE CHARACTERISTIC Tj = 140 °C ON-STATE CHARACTERISTIC Tj = 140 °C 25000 100 90 80 70 15000 ITSM [kA] On-state Current [A] 20000 10000 60 50 40 30 5000 20 10 0 0 0,6 1,1 1,6 2,1 On-state Voltage [V] 1 10 100 n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 7 Wave 6 Square Sine °180 0,39 0,75 βRth [°K/kW] °120 °90 °60 0,71 1,01 1,52 1,06 1,59 2,61 °30 2,54 4,04 Zth j-c [°C/kW] 5 4 3 2 1 0 0,0001 0,01 1 100 t[s] π ππ‘β πβπ π‘ = π΄π β 1 β π β π‘ ππ π=1 i Ai [°C/kW] 1 2,738 2 1,779 3 1,186 4 0,297 Οi [s] 2,4 1,70 0,16 0,001 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. Page 4 of 4