Medium Power Transistors (−30V / −2A) 2SAR512P Structure PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT3 Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) (1) 2) High speed switching (3) (1)Base Applications Driver (2)Collector (3)Emitter Packaging specifications Type (2) Abbreviated symbol : MB Inner circuit (Unit : mm) Package Taping Code T100 Basic ordering unit (pieces) 1000 (3) 2SAR512P (1) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO IC ICP *1 Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature Limits Unit -30 -30 -6 -2 -4 V V V A A PD *2 0.5 2 PD *3 150 Tj Tstg -55 to 150 (1) Base (2) Collector (3) Emitter (2) W W °C °C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.10 - Rev.A 2SAR512P Electrical characteristic (Ta = 25°C) Parameter Data Sheet Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCBO -30 - - V IC= -1ｍA Collector-base breakdown voltage BVCEO -30 - - V IC= -100µA Emitter-base breakdown voltage BVEBO -6 - - V IE= -100µA Collector cut-off current ICBO - - -1 µA VCB= -30V Emitter cut-off current IEBO - - -1 µA VEB= -4V *1 VCE(sat) - -200 -400 hFE 200 - 500 - VCE= -2V, IC= -100mA - 430 - MHz VCE= -10V IE=100mA, f=100MHz Collector-emitter staturation voltage DC current gain Transition frequency fT *1 mV IC= -700mA, IB= -35mA Collector output capacitance Cob - 15 - pF Turn-on time ton *2 - 30 - ns Storage time tstg *2 - 170 - ns t f *2 - 15 - ns Fall time VCB= -10V, IE=0A f=1MHｚ IC= -1A,IB1= -100mA, _ -10V IB2=100mA,VCC ~ *1 Pulsed *2 See switching time test circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.10 - Rev.A 2SAR512P Data Sheet Electrical characteristic curves -3.0mA -0.40 -2.0mA -0.35 -0.30 -1.5mA -0.25 -0.20 -1.0mA -0.15 -0.10 -0.5mA VCE= -5V -2V 100 Ta=125 75 25 -40 100 10 -1.0 -1.5 -1 -2.0 -10 COLECTOR TO EMITTER VOLTAGE : V CE[V] C C C C COLLECTOR SATURATION VOLTAGE : VCE (sat)[V] Ta=25 C -0.1 IC/IB=50 20 10 -0.01 -0.001 -1 -10 -100 -1000 -1 10 Cob 1 -0.1 -1 -10 -100 IC / IB=20 -10000 Ta=125 75 25 -40 C C C C -10 -100 -1000 Ta=125 75 25 -40 -100 C C C C -10 0 100 10 10 100 1000 Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig8. Gain Bandwidth Product vs. Emitter Current 3/4 -1 -1.5 Fig.6 Ground Emitter Propagation Characteristics DC Ta=25 C (Mounted on a ceramic board) -10 Ta=25 C VCE=-10V -0.5 BASE TO EMITTER VOLTAGE : VBE[V] Fig5. Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) EMITTER CURRENT : I E [mA] www.rohm.com -10000 VCE = -2V -1000 -10000 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) c 2009 ROHM Co., Ltd. All rights reserved. ○ -1000 -1 -0.001 1000 -100 Fig3. DC Current Gain vs.Collector Current (ΙΙ ) COLLECTOR CURRENT : I C[mA] TRANSITION FREQUENCY : fT[MHz] 100 -10 Fig2. DC Current Gain vs. Collector Current (Ι) -1 Fig4. Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Cib -1 COLLECTOR CURRENT : I C[mA] -0.01 -10000 Ta=25 C f=1MHz IE=0A IC=0A 10 -10000 -0.1 COLLECTOR CURRENT : IC[mA] 1000 -1000 COLLECTOR CURRENT : IC[mA] Fig.1 Typical Output Characteristics -1 -100 COLLECTOR CURRENT : IC[mA] -0.5 COLLECTOR CURRENT : IC (A) 0.0 COLLECTOR SATURATION VOLTAGE : VCE (sat)[V] VCE= -2V -0.05 0.00 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 Ta=25 C -2.5mA DC CURRENT GAIN : h FE COLLECTOR CURRENT : IC[A] 1000 -0.45 DC CURRENT GAIN : h FE -5.0mA -0.50 1ms 10ms -1 100ms -0.1 DC Ta=25 C (Mounted on a recommended land) Single pulse -0.01 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.9 Safe Operating Area 2009.10 - Rev.A 2SAR512P Data Sheet Switching time test circuit RL=10Ω VIN IB1 IC Pw _ -10V VCC ~ Pw IB2 _ 50µs ~ DUTY CYCLE≦1% IB2 BASE CURENT WAVEFORM IB1 ton 90% *1 Pw=10ms, Single Pulse COLLECTOR CURRENT WAVEFORM tstg tf IC *3 Mounted on a ceramic board. (40x40x0.7mm³) 10% www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.10 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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