Power Transistor (100V, 2A) 2SD1980 / 2SD1867 zDimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. 2SD1980 6.5 5.1 2.3 2.5 0.9 C 1.5 5.5 zinner circuit 0.75 2.3 (1) R1 0.8Min. 0.65 0.9 B (2) (3) 2.3 0.5 1.0 R2 (1) Base (2) Collector (3) Emitter E 2SD1867 zAbsolute maximum ratings (Ta=25°C) 2SD1980 2SD1867 Junction temperature Storage temperature PC Tj Tstg Limits 100 100 6 2 3 ∗1 1 10 1 ∗2 150 −55 to +150 Unit V V V A(DC) A(Pulse) W 2.5 6.8 0.65Max. 14.5 IC Collector current Collector power dissipation Symbol VCBO VCEO VEBO 0.9 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 4.4 R2 300Ω ROHM : CPT3 EIAJ : SC-63 B : Base C : Collector E : Emitter 1.0 R1 3.5kΩ 9.5 1.5 0.5 W(Tc=25°C) W °C °C 0.5 (1) ∗1 Single pulse Pw=100ms ∗2 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger. (2) (3) 2.54 2.54 1.05 0.45 Taping specifications zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SD1980 CPT3 1k to 10k − TL 2500 2SD1867 ATV 1k to 10k − TV2 2500 ROHM : ATV (1) Emitter (2) Collector (3) Base ∗ Denotes hFE zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltag Base-Emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCBO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. 100 100 6 − − − − 1000 − − Typ. − − − − − − − − 80 25 Max. − − − 10 3 1.5 2.0 10000 − − Unit V V V µA mA V V − MHz pF Conditions IC = 50µA IC = 5mA IE = 5mA VCB = 100V VEB = 5V IC = 1A , IB = 1mA ∗ IC/IB = 1A/1mA VCE = 2V , IC = 1A ∗ VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz ∗ Measured using pulse current. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.12 - Rev.C 2SD1980 / 2SD1867 Data Sheet zElectrical characteristic curves 10 A 0.9m A 0.8m A 0.7m A 0.6m A 0.4m 0.8 A IB=0.3m 0.4 Ta=25°C 1 0.5 0.2 0.1 0.05 VCE=4V 2V 2000 1000 500 200 100 50 0.02 0.01 0 0 1 2 3 4 5 0.2 0.6 1.0 1.4 1.8 2.2 2.6 20 10 0.001 3.0 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Fig.3 DC current gain vs. collector current VCE=2V 5000 2000 500 200 100 −2 25 5° °C C Ta =1 00 °C 1000 50 20 10 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 100 Ta=25°C 50 20 10 5 IC/IB=1000 2 500 1 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 10000 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 1.2 2 25°C −25°C A 0.5m 10000 5000 C 1.6 VCE=2V 5 00° 1m Ta= 1 A Ta=25°C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2.0 100 IC/IB=1000 50 20 10 5 Ta=−25°C 2 1 25°C 100°C 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage vs.collector current Fig.6 Collector-emitter saturation voltage vs.collector current 3 Ta=25°C f=1MHz IE=0A 500 2 1 IC Max Pulse IC Max =1 s m 00 0.5 s 100 0m =1 Pw 200 Pw IC (A) 50 20 DC COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 0.2 10 0.1 5 0.05 Ta=25°C ∗ Single Nonrepetitive Pulse 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Fig.8 Safe operating area(2SD1867) www.rohm.com c 2009 ROHM Co., Ltd. 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