ROHM 2SA1515S

Medium Power Transistor (32V,1A)
2SB1132 / 2SA1515S / 2SB1237
2SB1132
2SA1515S
4+
− 0.2
1.5 +0.2
−0.1
(1)
0.4 +
− 0.1
1.5 +
− 0.1
(2)
(3)
0.4 +0.1
−0.05
0.5 +
− 0.1
0.4 0.1
1.5 +
− 0.1
3.0 +
− 0.2
5
Abbreviated symbol: BA
(2)
14.5 +
− 0.5
(3)
2.54 2.54
1.05
ROHM : ATV
∗ Denotes h
1/4
(1) Emitter
(2) Collector
(3) Base
4.4 +
− 0.2
0.9
0.5 +
− 0.1
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0.45 +0.15
−0.05
1.0
0.65Max.
c 2009 ROHM Co., Ltd. All rights reserved.
○
0.5
2.5 +
− 0.2
6.8 +
− 0.2
(1)
2.5 +0.4
−0.1
ROHM : SPT
EIAJ : SC-72
∗
2SB1237
0.45 +0.15
−0.05
(1) (2) (3)
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
2+
− 0.2
3Min.
4.0 +
− 0.3
2.5 +0.2
−0.1
1.6 +
− 0.1
3+
− 0.2
0.5 +
− 0.1
4.5 +0.2
−0.1
(15Min.)
Structure
Epitaxial planar type
PNP silicon transistor
Dimensions (Unit : mm)
1.0 +
− 0.2
Features
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
(IC / IB = 500mA / 50mA)
2) Compliments 2SD1664 /
2SD1858
0.45 +
− 0.1
(1) Emitter
(2) Collector
(3) Base
FE
2009.12 - Rev.C
2SB1132 / 2SA1515S / 2SB1237
Data Sheet
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Limits
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−32
V
Emitter-base voltage
VEBO
−5
V
IC
Collector current
−1
A(DC)
−2
A(Pulse)
∗1
W
∗2
0.5
2SB1132
2
Collector power
dissipation
2SA1515S
PC
0.3
2SB1237
∗3
1
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
+
Single pulse, Pw=100ms
When mounted on a 40 40 0.7 mm ceramic board.
Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger.
+
∗1
∗2
∗3
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
−40
−
−
V
IC= −50μA
Collector-emitter breakdown voltage
BVCEO
−32
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −50μA
ICBO
−
−
−0.5
μA
VCB= −20V
IEBO
−
−
−0.5
μA
VEB= −4V
VCE(sat)
−
−0.2
−0.5
V
IC/IB= −500mA/−50mA
120
−
390
−
120
−
390
−
Parameter
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
2SB1132, 2SB1237
DC current
transfer ratio
2SA1515S
hFE
Unit
Transition frequency
fT
−
150
−
MHz
Output capacitance
Cob
−
20
30
pF
Conditions
VCE= −3V, IC= −0.1A
∗
∗
VCE= −5V, IE=50mA, f=30MHz
VCB= −10V, IE=0A, f=1MHz
∗ Measured using pulse current.
Packaging specifications and hFE
Package
Taping
Code
T100
TP
TU2
Basic ordering unit (pieces)
1000
5000
2500
−
−
Type
hFE
2SB1132
QR
2SA1515S
QR
−
2SB1237
QR
−
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/4
2009.12 - Rev.C
2SB1132 / 2SA1515S / 2SB1237
Data Sheet
Electrical characteristics curves
-50
Ta=100 C
25 C
−55 C
-20
-10
-5
1000
−2.0
−1.5
−300
−1.0
−200
−0.5
−100
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
−0.4
−0.8
−1.2
500
VCE= −3V
−1V
200
100
50
IB=0mA
−1.6
−2.0
−1
−2
−5 −10 −20
−50 −100 −200 −500 −1000
Fig.1 Grounded emitter
propagation characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current(Ι)
1000
500
Ta=100 C
25 C
200
−55 C
100
50
−2
−5 −10 −20
−50 −100 −200 −500−1000
−0.2
−0.1
−0.05
−0.02
−0.01
−1 −2
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
−1.0
Ta=25 C
−0.8
−0.6
lC= −500mA
−0.4
−0.2
lC= −300mA
0
−1
−2
−5
−10
−20
−50 −100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
BASE CURRENT : IB (mA)
Fig.4 DC current gain vs.
collector current(ΙΙ)
Fig.5 Collector-emitter saturation
voltage vs. collector current
Fig.6 Collector-emitter saturation
voltage vs. base current
Ta=25 C
VCE= −5V
50
−2
−5
−10
−20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product
vs. emitter current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Ta=25 C
f=1MHz
IE=0A
50
20
10
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs.collector-base voltage
3/4
−2
−1
−0.5
∗
100
−5
100
s
0m
=1 ∗
P w ms
00
=1
Pw
200
20
−1
−0.5
Ta=25 C
IC/IB=10
COLLECTOR CURRENT : IC (A)
−1
−1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR SATURATION VOLTAGE : VCE(sat )(V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
VCE= −3V
DC CURRENT GAIN : hFE
Ta=25 C
Ta=25 C
−2.5
-2
-1
0
TRANSITION FREQUENCY : fT (MHz)
−3.0
−3.5
−4.0
−400 −4.5
−5.0
DC CURRENT GAIN : hFE
-200
-100
−500
COLLECTOR CURRENT : IC (mA)
VCE= −6V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR CURRENT : IC (mA)
-500
D
−0.2
C
−0.1
−0.05
−0.02 Ta=25 C
∗Single pulse
−0.01
0 −0.2 −0.5 −1
−2
−5 −10 −20
−50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operation area
(2SB1132)
2009.12 - Rev.C
100
10
1
0.1
0.001
−5
Ta=25 C
0.01
0.1
1
10
100
1000
TIME : t (s)
Fig.10 Transient thermal resistance
(2SB1132)
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c 2009 ROHM Co., Ltd. All rights reserved.
○
−2
200
Ta=25 C
∗Single pulse
IC Max.∗
−1
−0.5
PW =10ms∗
∗
−0.2
Ta=25 C
100
TRANSIENT THERMAL
RESISTANCE : Rth ( C/W)
1000
Data Sheet
COLLECTOR CURRENT : IC (A)
TRANSIENT THERMAL RESISTANCE : Rth ( C/W)
2SB1132 / 2SA1515S / 2SB1237
PW =100ms
DC
−0.1
−0.05
50
20
10
5
−0.02
−0.01
−0.1 −0.2
−0.5 −1
−2
−5 −10 −20
−50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 Safe operation area
(2SB1237)
4/4
2
0.01
0.1
1
10
100
1000
TIME : t (s)
Fig.12 Transient thermal resistance
(2SB1237)
2009.12 - Rev.C
Notice
Notes
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