JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR (NPN) TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 2. COLLECTOR 3. BASE ℃ ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 7 V Collector cut-off current ICBO VCB= 600V , IE=0 100 μA Collector cut-off current ICEO VCE= 400V, IB=0 200 μA Emitter cut-off current IEBO VEB=7V, IC=0 100 μA hFE(1) VCE= 20V, IC= 20mA 10 hFE(2) VCE= 10V, IC= 0.25 mA 5 DC current gain 40 Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V VCE= 20V, IC=20mA Transition frequency fT Fall time tf IC=50mA,VCC=45V, 0.3 μs Storage time tS IB1=-IB2=5mA, 1.5 μs 8 f = 1MHz MHz CLASSIFICATION of hFE(1) Range 10-13 www.cj-elec.com 13-16 16-19 19-22 22-25 1 25-28 28-31 31-34 34-37 37-40 D,Oct,2014 TO-251-3L Package Outline Dimensions Symbol A A1 B b b1 c c1 D D1 E e e1 L www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP. 4.500 4.700 7.500 7.900 2 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP. 0.177 0.185 0.295 0.311 D,Oct,2014