JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) TO-251-3L TO-252-2L FEATURE · power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2. COLLECTOR 1 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA，IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA，IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA，IC=0 6 V ICBO VCB= 600V，IE=0 100 µA ICEO VCB= 400V，IE=0 100 µA IEBO VEB= 7V， IC=0 100 µA hFE1 VCE= 10 V, IC= 200mA 9 hFE2 VCE= 10 V, IC= 0.25mA 5 Collector cut-off current Emitter cut-off current Dc current gain 40 Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40mA 1.1 V VCE=10V, IC=100mA 5 MHz Transition frequency fT Fall time tf IC=1A, IB1=-IB2=0.2A 0.5 µs Storage time ts VCC=100V 2.5 µs f =1MHz CLASSIFICATION OF hFE1 Range www.cj-elec.com 9-15 15-20 20-25 1 25-30 30-35 35-40 C,Oct,2014 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF. 2 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF. C,Oct,2014 To-252(4R)-2L Tape and Reel www.cj-elec.com 3 C,Oct,2014