JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5400 TO-92 TRANSISTOR (PNP) FEATURE 1.EMITTER Switching and Amplification in High Voltage z Applications such as Telephony z Low Current(max. 600mA) z High Voltage(max.130v) 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit VCBO Collector-Base Voltage Parameter -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -130 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -5 V Collector cut-off current ICBO VCB= -100 V, Emitter cut-off current IEBO VEB= -3 V, IC=0 hFE1 VCE= -5 V, IC=-1mA 30 hFE2 VCE= -5 V, IC= -10mA 40 hFE3 VCE= -5 V, 40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance www.cj-elec.com IE=0 IC=-50mA -0.1 μA -0.1 μA 180 VCE(sat) IC= -10mA, IB= -1mA -0.2 V VCE(sat) IC= -50mA, IB= -5mA -0.5 V VBE(sat) IC= -10mA, IB= -1mA -1 V VBE(sat) IC= -50mA, IB= -5mA -1 V fT Cob VCE=-10V, f =30MHz IC=-10mA VCB=-10V,IE=0,f=1MHz 1 100 MHz 6 pF C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C,Dec,2015