High-reliability discrete products and engineering services since 1977 MFE140 DUAL GATE MOSFET FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Symbol Value Unit Drain-source voltage Rating VDS 25 Vdc Gate-source voltage VGS ±7.0 Vdc Drain current ID 30 mAdc Gate current IG 10 mAdc Total device dissipation @ TA = 25°C Derate above 25°C PD 300 mW TJ, Tstg -65 to 175 °C Operating and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain source breakdown voltage (ID = 10µAdc, VS = 0, VG1 = -4.0Vdc, VG2 = 4.0Vdc) V(BR)DSX 25 - - Vdc Gate 1-source breakdown voltage (IG1 = ±10µAdc, VG2S = 0) V(BR)G1SO ±7.0 - ±20 Vdc Gate 2-source breakdown voltage (IG2 = ±10µAdc, VG2S = 0) V(BR)G2SO ±7.0 - ±20 Vdc Gate 1 leakage current (VG1S = ±6.0Vdc, VG2S = 0, VDS = 0) IG1SS - - 20 nAdc Gate 2 leakage current (VG2S = ±6.0Vdc, VG1S = 0, VDS = 0) IG2SS - - 20 nAdc Gate 1 to source cutoff voltage (VDS = 15Vdc, VG2S = 4.0, ID = 200µAdc) VG1S(off) - - -4.0 Vdc Gate 2 to source cutoff voltage (VDS = 15Vdc, VG1S = 0, ID = 200µAdc) VG2S(off) - - -4.0 Vdc IDSS 3.0 10 30 mA Forward transfer admittance (gate 1 connected to drain) (VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0kHz) |yfs| 10 - 20 mmhs Input capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Ciss - 4.5 7.0 pF Reverse transfer capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Crss - 0.023 0.05 pF Output capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Coss - 2.5 4.0 pF OFF CHARACTERISTICS ON CHARACTERISTICS Zero-gate voltage drain current (VDS = 15Vdc, VG2S = 0, VG2S = 4.0Vdc) SMALL SIGNAL CHARACTERISTICS Rev. 20120706 High-reliability discrete products and engineering services since 1977 MFE140 DUAL GATE MOSFET FUNCTIONAL CHARACTERISTICS Noise figure NF - 2.5 3.5 dB Common source power gain Gps 20 23 - dB - - 45 - mV GC 15 18.5 - dB ½ IFREJ - 50 - dB Level of unwanted signal for 1.0% cross modulation Common-source conversion power gain(Gate 1 or Gate 2 injection) (Signal frequency = 100MHz, local oscillator frequency = 110.7MHz) ½ IF rejection MECHANICAL CHARACTERISTICS Case: TO-72 Marking: Alpha-numeric Pin out: See below Rev. 20120706 High-reliability discrete products and engineering services since 1977 MFE140 DUAL GATE MOSFET Rev. 20120706 High-reliability discrete products and engineering services since 1977 MFE140 DUAL GATE MOSFET Rev. 20120706 High-reliability discrete products and engineering services since 1977 MFE140 DUAL GATE MOSFET Rev. 20120706