MFE211-MFE212 DUAL GATE MOSFETS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Symbol Value Unit Drain Source Voltage VDSX 20 Vdc Drain Gate Voltage VDG1 VDG2 35 35 Vdc Gate Current IG1 IG2 ±10 ±10 mAdc Drain Current – Continuous ID 50 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 360 2.4 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.2 8.0 Watt mW/°C Storage Channel Temperature Range Tstg -65 to +200 °C Junction Temperature Range TJ -65 to +175 °C Lead Temperature, 1/16” from Seated Surface for 10 Seconds TL 300 °C Symbol Min Max Unit Drain Source Breakdown Voltage (ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc) V(BR)DSX 20 - Vdc Gate 1 – Source Breakdown Voltage (1) (IG1 = ±10 mAdc, VG2S = VDS = 0) V(BR)G1SO ±6.0 - Vdc Gate 2 – Source Breakdown Voltage (1) (IG2 = ±10 mAdc, VG1S = VDS = 0) V(BR)G2SO ±6.0 - Vdc ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Gate 1 to Source Cutoff Voltage (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 20 µAdc) MFE211 MFE212 VG1S(off) -0.5 -0.5 -5.5 -4.0 Vdc Gate 2 to Source Cutoff Voltage (VDS = 15 Vdc, VG1S = 0, ID = 20 µAdc) MFE211 MFE212 VG2S(off) -0.2 -0.2 -2.5 -4.0 Vdc Gate 1 Leakage Current (VG1S = ±5.0 Vdc, VG2S = VDS = 0) (VG1S = -5.0 Vdc, VG2S = VDS = 0, TA = 150°C) IG1SS - ±10 -10 mAdc µAdc Gate 2 Leakage Current (VG2S = ±5.0 Vdc, VG1S = VDS = 0) (VG2S = -5.0 Vdc, VG1S = VDS = 0, TA = 150°C) IG2SS - ±10 -10 nAdc µAdc IDSS 6.0 40 mAdc Yfs 17 40 mmhos Crss 0.005 0.05 pF ON CHARACTERISTICS Zero-Gate Voltage Drain Current (2) (VDS = 15 Vdc, VG1S = 0, VG2S = 4.0 Vdc) SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance (3) (VDS = 15 Vdc, VG2S = 4.0 Vdc, VG1S = 0, f = 1.0 kHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 10 mAdc, f = 1.0 MHz) Rev. 20120705 MFE211-MFE212 DUAL GATE MOSFETS High-reliability discrete products and engineering services since 1977 FUNCTIONAL CHARACTERISTICS Noise Figure (VDD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz) (VDD = 24 Vdc, VGG = 6.0 Vdc, f = 45 MHz) Common Source Power Gain (VDD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz) (VDD = 18 Vdc, VGG = 6.0 Vdc, f = 45 MHz) (VDD = 18 Vdc, fLO = 245 MHz, f RF = 200 MHz) Bandwidth (VDD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz) MFE211 MFE212 MFE211 MFE211 MFE212 (VDD = 18 Vdc, VGG = 6.0 Vdc, f = 45 MHz) MFE211 MFE212 MFE211 Gain Control Gate Supply Voltage (4) (VDD = 18 Vdc, Gps = -30 dB, f = 200 MHz) (VDD = 18 Vdc, Gps = -30 dB, f = 45 MHz) MFE211 MFE211 (VDD = 18 Vdc, fLO = 245 MHz, f RF = 200 MHz) 1. 2. 3. 4. 5. NF Gps Gc (5) BW VGG(GC) - 3.5 4.0 24 29 21 35 37 28 5.0 4.0 3.5 12 7.0 6.0 - -2.0 ±1.0 dB dB MHz Vdc All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate voltage limiting network is functioning properly. Pulse test: Pulse width = 300µs, duty cycle ≤ 2%. This parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating. The signal is applied to gate 1 with gate 2 at ac ground. Gps is defined as the change in Gps from the value at VGG = 7.0 volts (MFE211). Power Gain Conversion. Amplitude at input from local oscillator is adjusted for maximum G C. MECHANICAL CHARACTERISTICS Case: TO-72 Marking: Alpha-numeric Pin out: See below Rev. 20120705 High-reliability discrete products and engineering services since 1977 MFE211-MFE212 DUAL GATE MOSFETS Rev. 20120705 High-reliability discrete products and engineering services since 1977 MFE211-MFE212 DUAL GATE MOSFETS Rev. 20120705 High-reliability discrete products and engineering services since 1977 MFE211-MFE212 DUAL GATE MOSFETS Rev. 20120705 High-reliability discrete products and engineering services since 1977 MFE211-MFE212 DUAL GATE MOSFETS Rev. 20120705