NTE222 Field Effect Transistor Dual Gate N–Channel MOSFET Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Reverse Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10mA Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 25 – – V OFF Characteristics Drain–Source Breakdown Voltage V(BR)DSX ID = 10µA, VG1 = VG2 = –5V Gate 1–Source Breakdown Voltage V(BR)G1SO IG1 = ±10mA, Note 1 ±6 – ±30 V Gate 2–Source Breakdown Voltage V(BR)G2SO IG2 = ±10mA, Note 1 ±6 – ±30 V Gate 1 Leakage Current IG1SS VG1S = ±5V, VG2S = VDS = 0 – – ±10 nA Gate 2 Leakage Current IG2SS VG2S = ±5V, VG1S = VDS = 0 – – ±10 nA Gate 1 to Source Cutoff Voltage VG1S(off) VDS = 15V, VG2S = 4V, ID = 20µA –0.5 – –4.0 V Gate 2 to Source Cutoff Voltage VG2S(off) VDS = 15V, VG1S = 0V, ID = 20µA –0.2 – –4.0 V IDSS VDS = 15V, VG2S = 4V, VG1S = 0V 6 – 30 mA |Yfs| VDS = 15V, VG2S = 4V, VG1S = 0V, f = 1kHz, Note 3 10 – 22 mmhos ON Characteristics (Note 2) Zero–Gate–Voltage Drain Current Small–Signal Characteristics Forward Transfer Admittance Note 1. All gated breakdown voltages are measured while the device is conducting rated gate current. This insures that the gate voltage limiting network is functioning properly. Note 2. Pulse Test: Pulse Width = 30µs, Duty Cycle ≤ 2%. Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds to avoid overheating. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – 3.3 – pF 0.005 – 0.03 pF Small–Signal Characteristics (Cont’d) Input Capacitance Ciss VDS = 15V, VG2S = 4V, ID = IDSS, f = 1MHz Reverse Transfer Capacitance Crss VDS = 15V, VG2S = 4V, ID = 10mA, f = 1MHz Output Capacitance Coss VDS = 15V, VG2S = 4V, ID = IDSS, f = 1MHz – 1.4 – pF NF VDD = 18V, VGG = 7V, f = 200MHz – – 3.5 dB VDD = 15V, VG2S = 4V, ID = 10mA, f = 200MHz – – 5.0 dB VDD = 18V, VGG = 7V, f = 200MHz 20 – 28 dB VDD = 15V, VG2S = 4V, ID = 10mA, f = 200MHz 14 – – dB VDD = 18V, VGG = 7V, f = 200MHz 7 – 12 MHz VDD = 18V, fLO = 245MHz, fRF = 200MHz, Note 5 4 – 7 MHz VDD = 18V, ∆Gps = 300dB, f = 200MHz, Note 4 0 – –2.0 V Functional Characteristics Noise Figure Common Source Power Gain Bandwidth Gain Contol Gate–Supply Voltage Gps BW VGG(GC) Note 4. ∆Gps is defined as the change in Gps from the value at VGG = 7V. Note 5. Amplitude at input from local oscillator is 3V RMS. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate 2 Drain Gate 1 45° Source/Case .040 (1.02)