3cc665f1c473066c1db4045a179b0013

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Transistors
JC(T
2SA1873 DUAL TRANSISTOR (PNP+PNP)
SOT-353
Features
z Small package (dual type)
z High voltage and high current
z High hFE
z Excellent hFE linearity
z Complementary to 2SC4944
MARKING: SY SGR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
Units
V
Value
-50
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-150
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
M ax
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-2mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
400
120
IC=-100mA,IB=-10mA
VCE=-10V,IC=-1mA
-0.3
80
MHz
7
VCB=-10V,IE=0,f=1MHz
Cob
V
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
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Y
GR
120-240
200-400
SY
SGR
1
AJun,2014
D,Mar,2014
SOT-353 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.100
0.150
2.000
2.200
1.150
1.350
2.150
2.400
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.004
0.006
0.079
0.087
0.045
0.053
0.085
0.094
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
SOT-353 Suggested Pad Layout
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2
D,Mar,2016
SOT-353 Tape and Reel
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3
D,Mar,2016