JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors JC(T 2SA1873 DUAL TRANSISTOR (PNP+PNP) SOT-353 Features z Small package (dual type) z High voltage and high current z High hFE z Excellent hFE linearity z Complementary to 2SC4944 MARKING: SY SGR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage Units V Value -50 -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-2mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT 400 120 IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA -0.3 80 MHz 7 VCB=-10V,IE=0,f=1MHz Cob V pF CLASSIFICATION OF hFE Rank Range Marking www.cj-elec.com www.cj-elec.com Y GR 120-240 200-400 SY SGR 1 AJun,2014 D,Mar,2014 SOT-353 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-353 Suggested Pad Layout www.cj-elec.com 2 D,Mar,2016 SOT-353 Tape and Reel www.cj-elec.com 3 D,Mar,2016