JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP) TO-251-3L FEATURES z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to MJD112 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 1.75 W Thermal Resistance From Junction To Ambient 71 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Test conditions Min Typ Max Unit IC=-1mA,IE=0 -100 V IC=-30mA,IB=0 -100 V -5 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=-5mA,IC=0 Collector cut-off current ICBO VCB=-80V,IE=0 -10 μA Collector cut-off current ICEX VCE=-80V, VBE(off)=-1.5V -10 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -2 mA DC current gain hFE(1)* VCE=-3V, IC=-0.5A 500 hFE(2)* VCE=-3V, IC=-2A 1000 hFE(3)* VCE=-3V, IC=-4A 200 * Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat)* * Base-emitter voltage VBE Collector output capacitance Cob Transition frequency fT 12000 IC=-2A,IB=-8mA -2 V IC=-4A,IB=-40mA -3 V IC=-4A,IB=-40mA -4 V VCE=-3V, IC=-2A -2.8 V VCB=-10V,IE=0, f=0.1MHz 200 pF VCE=-10V,IC=-0.75A, f=1MHz 25 MHz *Pulse test www.cj-elec.com 1 C,Oct,2014 TO-251-3L Package Outline Dimensions Symbol A A1 B b b1 c c1 D D1 E e e1 L www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP. 4.500 4.700 7.500 7.900 2 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP. 0.177 0.185 0.295 0.311 C,Oct,2014