JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4124 TRANSISTOR (NPN) 1. EMITTER FEATURES z High DC Current Gain z High Transition Frequency 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V 0.2 A IC Collector Current Collector Power Dissipation 350 mW Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ PC RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.01mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=0.01mA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 50 nA Emitter cut-off current IEBO VEB=3V,IC=0 50 nA hFE(1) VCE=1V, IC=2mA 120 60 DC current gain 360 hFE(2) VCE=1V, IC=50mA Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.3 V Base-emitter saturation voltage VBE (sat) IC=50mA,IB=5mA 0.95 V 4 pF Collector output capacitance Transition frequency www.cj-elec.com Cob fT VCB=5V,IE=0, f=1MHz VCE=20V,IC=10mA, f=100MHz 1 300 MHz C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C,Dec,2015