JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors JC(T BC847S DUAL TRANSISTOR (NPN+NPN) SOT-363 APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Parameter VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 6 Unit V IC Collector Current-Continuous 00 mA PD Power Dissipation 200 mW Thermal Resistance. Junction to Ambient 625 ℃/W Junction Temperature 150 RθJA Tj Tstg Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 Emitter cut-off current IEBO VEB =4V, IC=0 15 DC current gain* hFE VCE=5V,IC=2mA Test conditions Min Typ Max Unit nA 630 110 VCE(sat)(1) IC=10mA,IB=0.5mA 0.25 V VCE(sat)(2) IC=100mA,IB=5mA 0.65 V 0.7 V 0.77 V Collector-emitter saturation voltage VBE(1) VCE=5V,IC=2mA VBE(2) VCE=5V,IC=10mA 0.58 Base-emitter voltage Transition frequency Collector output capacitance fT Cob VCE=5V,IC=20mA ,f=100MHz VCB=10V,IE=0,f=1MHz 200 MHz 2 pF *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. www.cj-elec.com 1 F,Mar,2016 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout www.cj-elec.com 2 F,Mar,2016 SOT-363 Tape and Reel www.cj-elec.com 3 F,Mar,2016