870c924ade92650e1ff23982353a0a82

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
BCX38
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z High DC Current Gain
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current -Continuous
0.8
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
*
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Test
conditions
Min
Typ
Max
Unit
IC= 0.01mA,IE=0
80
V
IC=10mA,IB=0
60
V
IE=0.01mA,IC=0
10
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=8V,IC=0
0.1
μA
IC=800mA,IB=8mA
1.25
V
IC=800mA, VCE=5V
1.8
V
VCE=5V, IC=100mA
hFE(1)*
DC current gain
Base-emitter voltage
500
BCX38B
2000
BCX38C
5000
VCE=5V, IC=500mA
hFE(2)
Collector-emitter saturation voltage
BCX38A
*
VCE(sat)
VBE
*
*
BCX38A
1000
BCX38B
4000
BCX38C
10000
*Pulse test
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1
B,Oct,2014
TO-92 Package Outline Dimensions
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
Min
Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.400
4.700
3.430
4.300
4.700
1.270 TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min
Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.173
0.185
0.135
0.169
0.185
0.050 TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015
TO-92 Suggested Pad Layout
www.cj-elec.com
2
B,Oct,2014
TO-92 7DSHDQG5HHO
ZZZFMHOHFFRP3 B,Oct,2014