JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC516 TRANSISTOR (PNP) 1.COLLECTOR FEATURES z High DC Current Gain z High Collector Current 2.BASE 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current -1 A PC Collector Power Dissipation 625 mW Thermal Resistance Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -40 V Collector-emitter V(BR)CEO IC=-2mA,IB=0 -30 V V(BR)EBO IE=-10μA,IC=0 -10 V Collector cut-off current ICBO VCB=-30V,IE=0 DC current gain hFE VCE=-2V, IC=-20mA breakdown Emitter-base breakdown voltage -0.1 μA 30000 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-0.1mA -1 V Base-emitter saturation voltage VBE(sat) IC=-100mA,IB=-0.1mA -1.5 V VCE=-5V, IC=-10mA -1.4 V Base-emitter voltage VBE Transition frequency fT www.cj-elec.com VCE=-5V,IC=-10mA, f=100MHz 1 200 MHz B,Oct,2014 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 B,Oct,2014 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 B,Oct,2014