ELM-TECH ELM33412CA-S

Single N-channel MOSFET
ELM33412CA-S
■General description
■Features
ELM33412CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=20V
Id=6A
Rds(on) < 24mΩ (Vgs=4.5V)
Rds(on) < 32mΩ (Vgs=2.5V)
Rds(on) < 50mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Symbol
Vgs
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Idm
Avalanche current
Avalanche energy
Ias
Eas
Power dissipation
Ta=70°C
Junction and storage temperature range
Note
A
A
21
22
1.0
Pd
Tj, Tstg
Unit
V
6
5
25
Id
Pulsed drain current
L=0.1mH
Ta=25°C
Limit
±8
3
A
mJ
W
0.6
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
130
Unit
°C/W
■Circuit
D
SOT-23(TOP VIEW)
3
1
2
Note
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
4- 1
Single N-channel MOSFET
ELM33412CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=16V, Vgs=0V
Vds=10V, Vgs=0V, Tj=70°C
Gate-body leakage current
Igss
Vds=0V, Vgs=±8V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=10V
20
0.5
30
V
0.8
1
10
μA
±100
nA
1.0
V
A
1
mΩ
1
S
1
V
A
1
Vgs=4.5V, Id=6A
18
24
Rds(on) Vgs=2.5V, Id=5A
Vgs=1.8V, Id=4A
21
29
32
50
Forward transconductance
Gfs
Vds=5V, Id=6A
Diode forward voltage
Max. body-diode continuous current
Vsd
Is
If=6A, Vgs=0V
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Min.
Ta=25°C
Typ. Max. Unit Note
9
1
1.4
1030
176
pF
pF
Crss
126
pF
Qg
13.2
nC
2
Vgs=0V, Vds=10V, f=1MHz
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs Vgs=4.5V, Vds=10V, Id=6A
Qgd
td(on)
2.0
4.0
7
nC
nC
ns
2
2
2
Turn-on rise time
Turn-off delay time
tr
Vgs=4.5V, Vds=10V, Id≈6A
td(off) Rgen=6Ω
13
52
ns
ns
2
2
16
14.1
4.0
ns
ns
nC
2
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
tf
trr
Qrr
If=6A, dl/dt=100A/μs
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4- 2
Single N-channel MOSFET
ELM33412CA-S
■Typical electrical and thermal characteristics
ID, Drain-To-Source Current(A)
Transfer Characteristics
ID, Drain-To-Source Current(A)
Output Characteristics
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
Capacitance Characteristic
C , Capacitance(pF)
RDS(ON)ON-Resistance(OHM)
VDS, Drain-To-Source Voltage(V)
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
Source-Drain Diode Forward Voltage
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
TJ , Junction Temperature(�C)
Qg , Total Gate Charge(nC)
VSD, Source-To-Drain Voltage(V)
4- 3
Single N-channel MOSFET
ELM33412CA-S
Single Pulse Maximum Power Dissipation
Power(W)
ID , Drain Current(A)
Safe Operating Area
VDS, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Resistance
r(t) , Normalized Effective
Transient Thermal Response Curve
T1 , Square Wave Pulse Duration[sec]
4- 4