Single N-channel MOSFET ELM33412CA-S ■General description ■Features ELM33412CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=20V Id=6A Rds(on) < 24mΩ (Vgs=4.5V) Rds(on) < 32mΩ (Vgs=2.5V) Rds(on) < 50mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Symbol Vgs Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Idm Avalanche current Avalanche energy Ias Eas Power dissipation Ta=70°C Junction and storage temperature range Note A A 21 22 1.0 Pd Tj, Tstg Unit V 6 5 25 Id Pulsed drain current L=0.1mH Ta=25°C Limit ±8 3 A mJ W 0.6 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 130 Unit °C/W ■Circuit D SOT-23(TOP VIEW) 3 1 2 Note Pin No. Pin name 1 2 3 GATE SOURCE DRAIN G S 4- 1 Single N-channel MOSFET ELM33412CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=16V, Vgs=0V Vds=10V, Vgs=0V, Tj=70°C Gate-body leakage current Igss Vds=0V, Vgs=±8V Gate threshold voltage On state drain current Static drain-source on-resistance Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=10V 20 0.5 30 V 0.8 1 10 μA ±100 nA 1.0 V A 1 mΩ 1 S 1 V A 1 Vgs=4.5V, Id=6A 18 24 Rds(on) Vgs=2.5V, Id=5A Vgs=1.8V, Id=4A 21 29 32 50 Forward transconductance Gfs Vds=5V, Id=6A Diode forward voltage Max. body-diode continuous current Vsd Is If=6A, Vgs=0V DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Min. Ta=25°C Typ. Max. Unit Note 9 1 1.4 1030 176 pF pF Crss 126 pF Qg 13.2 nC 2 Vgs=0V, Vds=10V, f=1MHz Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=4.5V, Vds=10V, Id=6A Qgd td(on) 2.0 4.0 7 nC nC ns 2 2 2 Turn-on rise time Turn-off delay time tr Vgs=4.5V, Vds=10V, Id≈6A td(off) Rgen=6Ω 13 52 ns ns 2 2 16 14.1 4.0 ns ns nC 2 Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge tf trr Qrr If=6A, dl/dt=100A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 Single N-channel MOSFET ELM33412CA-S ■Typical electrical and thermal characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) Output Characteristics VGS, Gate-To-Source Voltage(V) On-Resistance VS Temperature Capacitance Characteristic C , Capacitance(pF) RDS(ON)ON-Resistance(OHM) VDS, Drain-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Source-Drain Diode Forward Voltage IS , Source Current(A) VGS , Gate-To-Source Voltage(V) TJ , Junction Temperature(�C) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) 4- 3 Single N-channel MOSFET ELM33412CA-S Single Pulse Maximum Power Dissipation Power(W) ID , Drain Current(A) Safe Operating Area VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Resistance r(t) , Normalized Effective Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] 4- 4