5fb30bc969557ad3dcef58586e84bf0c

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-U Power Management MOSFETs-Schottky
CJLJF3117PB P-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
ID/IO
RDS(on)MAX
DFNWB2×2-6L-U
100mΩ@-4.5V
-20V
-3.3A 135mΩ@-2.5V
250mΩ@-1.8V 20V
/
0.5A
FEATURE
APPLICATION
z
Independent Pinout to Each Device to
Each Device to Ease Circuit Design
z
High Current Schottky Diode
z
Optimized for Portable Applications Like Cell Phones,
Digital Cameras,Media Players,etc
DC-DC Buck Circuits
z
Featuring a MOSFET and a
Schottky Barrier Diode
z
Li-ion Battery Applications
z
Color Display and Camera Flash Regulators
z
Equivalent Circuit
MARKING
K
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Para
G
S
6
5
4
1
2
3
A
meter
D
Value
Unit
P-MOSFET
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±8
V
Continuous Drain Current
-3.3
A
Pulse Drain Current
-10
A
Peak Repetitive Reverse Voltage
20
V
VR
DC Blocking Voltage
20
V
IO
Average Rectified Forward Current
0.5
A
Power Dissipation
0.75
W
Thermal Resistance from Junction to Ambient
83.3
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
TL
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
260
℃
ID
IDM*
Schottky Barrier Diode
VRRM
Power Dissipation, Temperature and Thermal Resistance
PD
RθJA
*Repetitive rating:Pluse width limited by junction temperature.
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MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
P-MOSFET
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS
VGS =0V, ID=-250µA
Zero gate voltage drain current
IDSS
VDS =-16V,VGS = 0V
-1
µA
Gate-body leakage current
IGSS
VGS =±8V, VDS = 0V
±100
nA
-1
V
VGS =-4.5V, ID =-2A
100
mΩ
VGS =-2.5V, ID =-2A
135
mΩ
250
mΩ
Gate threshold voltage
VGS(th)
VDS =VGS, ID =-250µA
Drain-source on-resistance(note1)
RDS(on)
Forward transconductance(note1)
gFS
VDS=-5V,ID=-2A
Diode forward voltage(note1)
VSD
IS=-1A, VGS = 0V
V
-20
-0.4
VGS =-1.8V, ID =-1.6A
2.5
S
-1
V
DYNAMIC PARAMETERS (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
531
pF
91
pF
Crss
56
pF
td(on)
5.2
ns
VGS=-4.5V,VDD=-5V,
13.2
ns
RG=6Ω, ID=-1A
VDS =-10V,VGS =0V,f =1MHz
SWITCHING PARAMETERS (note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
tr
13.7
ns
tf
19.1
ns
Total Gate Charge
Qg
5.5
Gate-Source Charge
Qgs
VDS =-10V,VGS =-4.5V,
1.0
nC
Gate-Drain Charge
Qgd
ID =-2A
1.4
nC
Gate Resistance
Rg
8.8
Ω
Turn-off fall time
td(off)
6.2
nC
SCHOTTKY BARRIER DIODE
Forward voltage
VF
IF=0.5A
0.55
V
Reverse current
IR
VR=20V
100
µA
Junction capacitance
Cj
VR=4V,f=1MHz
40
pF
Note:
1.Pulse test: pulse width =300μs, duty cycle≤ 2%
2.These parameters have no way to verify.
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P-channel Characteristics
Output Characteristics
-10
VGS=-2.5V,-3.5V,-4.5V,
Ta=25℃
Transfer Characteristics
-10
Ta=25℃
Pulsed
Pulsed
-8
-8
(A)
VGS=-1.5V
ID
-4
-6
DRAIN CURRENT
ID
-6
DRAIN CURRENT
(A)
VGS=-2.0V
-4
-2
-0
-2
VGS=-1.0V
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
RDS(ON)
150
VDS
-0
-0.0
-4
(V)
-1.0
-1.5
GATE TO SOURCE VOLTAGE
ID
——
-0.5
RDS(ON)
250
——
-2.0
VGS
VGS
Ta=25℃
Ta=25℃
VGS=-1.8V
-2.5
(V)
Pulsed
Pulsed
200
RDS(ON)
(m)
VGS=-2.5V
VGS=-4.5V
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
120
90
60
30
-2
-4
DRAIN CURRENT
-10
IS
——
-6
ID
150
100
50
0
-8
(A)
ID=-2.8A
-0
-2
-4
GATE TO SOURCE VOLTAGE
-6
VGS
-8
(V)
VSD
Ta=25℃
Pulsed
SOURCE CURRENT
IS
(A)
-1
-0.1
-0.01
-1E-3
-0.2
-0.4
-0.6
-0.8
SOURCE TO DRAIN VOLTAGE
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-1.0
VSD
-1.2
(V)
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Schottky Characteristics
Foward Characteristics
(uA)
REVERSE CURRENT IR
T=
a 2
5℃
T=
a 1
00
℃
IF
FORWARD CURRENT
100
10
1
0.0
0.2
0.4
FORWARD VOLTAGE
0.6
VF
Reverse Characteristics
1000
(mA)
1000
100
Ta=100℃
Ta=25℃
10
1
0.8
(V)
0
5
10
15
REVERSE VOLTAGE
20
VR
25
30
(V)
Capacitance Characteristics
120
Ta=25℃
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
90
60
30
0
0
5
10
15
REVERSE VOLTAGE
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20
VR
25
30
(V)
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N3
N4
N1
N6
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DFNWB2X2-6L Tape and Reel
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