RPI-0128 Photointerrupter, Ultraminiature SMD type Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Forward current IF 30 mA Reverse voltage VR 5 V Power dissipation PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Collector current IC 30 mA Collector power dissipation PC 80 mW Operating temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +85 °C Applications DSC(Digital steal camera) DVC(Digital video camera) Digital handy phone Features 1) Ultraminiature SMD type. 2) Gap 1.2mm. Electrical and optical characteristics (Ta=25°C) Output Input charac- characteristics teristics Parameter Symbol Min. Typ. Max. Unit VF 1.2 1.35 1.5 V IF=5mA Forward voltage IR − − 10 μA VR=5V − − 0.1 μA VCE=10V λP − 800 − nm IC1 5.0 − 25 mA VCE=5V, IF=20mA IC2 1.0 − − − 5 mA VCE=5V, IF=5mA Collector-emitter saturation voltage VCE(sat) 0.4 V Rise time tr − 10 − μs Fall time tf − 10 − μs Cut-off frequency fC − 1 − MHz Peak light emitting wavelength λP − 850 − nm tr tf − 10 − μs λP − 800 − nm Dark current Peak sensitivity wavelength Infrared Transfer light characteristics emitter diode Conditions ICEO Reverse current Photo transistor Collector current Response time Response time Maximum sensitivity wavelength − IF=20mA, IC=0.1mA VCC=5V, IF=20mA, RL=100Ω IF=5mA ∗ Non-coherent Infrared light emitting diode used. VCC=5V, IC=1mA, RL=100Ω ∗ This product is not designed to be protected against electromagnetic wave. − 120 20 d 80 60 40 20 0 0 0.5 1 1.5 30 25 20 15 10 5 0 2 DISTANCE : d (mm) Fig.1 Relative output current vs. distance ( ) d 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 DISTANCE : d (mm) Fig.4 Relative output current vs. distance ( ) Ta=75°C 50°C 25°C 0°C −25°C 12 8 4 0 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) 100 PD PC 80 60 40 20 −20 0 20 40 60 80 1.0 1.5 2.0 Fig.3 Forward current vs. forward voltage 120 0 0.5 FORWARD VOLTAGE : VF (V) Fig.2 Forward current falloff POWER DISSIPATION / COLLECTOR POWER DISSIPTION : PD/PC (mW) 120 16 0 -25 100 AMBIENT TEMPERATURE : Ta (°C) Fig.5 Power dissipation / collector power dissipation vs. ambient temperature RELATIVE COLLECTOR CURRENT : Ic (%) 100 FORWARD CURRENT : IF (mA) 35 FORWARD CURRENT : IF (mA) RELATIVE COLLECTOR CURRENT : Ic (%) Electrical and optical characteristics curves RELATIVE COLLECTOR CURRENT : Ic ( %) Output (phototransistor ) Input (LED) Parameter 140 120 100 IF=5mA 80 60 20mA 40 20 VCE=5V 0 -25 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) Fig.6 Relative output vs. ambient temperature Dimensions (Unit : mm) C0.3 2-0.1 (0.65) A-A' Cross section 3 1 4 0.6 2 1.4 A' 12 700 10 8 6 4 2 VCE=5V Ta=25°C 0 0 5 10 15 20 VCC=5V IC=0.1mA Anode Collector Cathode Emitter 1000 tr 600 tf 500 400 300 200 100 VCE=30V VCE=20V VCE=10V 10 1 0.1 100 0 1 10 LOAD RESISTANCE : RL (kΩ) Fig.7 Collector current vs. forward current Fig.8 Response time vs. load resistance Input −25 100 FORWARD CURRENT : IF (mA) 16 COLLECTOR CURRENT : IC (mA) Internal connection diagram DARK CURRENT : ICEO (nA) 800 RESPONSE TIME : tr (μs) COLLECTOR CURRENT : IC (mA) 0.9 2 14 (0.2) +0.1 0.05 -0.05 0.45 0.2 1.8 ±0.1 Gate 0.6 A Optical center 1.2 ±0.15 (0.34) 1.6 ±0.1 2.5 ±0.15 (0.1) Notes: 1. Unspecified tolerance shall be ±0.2 . 2. Dimension in parenthesis are show for reference. 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) Fig.9 Dark current vs. ambient temperature VCC IF=20mA 14 12 15mA Input Output 10 90% RL 8 10mA 10% Output 6 td 4 tr 5mA 2 0 tf td : Delay time t r : Rise time (time for output current to rise from 10% to 90% of peak current) 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE: VCE (V) Fig.10 Output characteristics t f : Fall time (time for output current to fall from 90% to 10% of peak current) Fig.11 Response time measurement circuit 2010.07 Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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