Data Sheet Schottky Barrier Diode RB501VM-40 Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 0.05 0.9MIN. 1.7±0.1 Features 1)Small mold type. (UMD2) 2)High reliability 2.5±0.2 2.1 0.8MIN. 1.25±0.1 UMD2 Construction Silicon epitaxial planer 0.7±0.2 0.1 0.3±0.05 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping dimensions (Unit : mm) 0.3±0.1 φ1.55±0.05 2.0±0.05 4.0±0.1 1.40±0.1 2.8±0.1 2.75 8.0±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Limits 45 40 100 1 125 - 40 to +125 Unit V V mA A °C °C Min. Typ. Max. Unit - - 0.55 V Conditions IF=100mA - - 0.34 V IF=10mA Reverse current IR - - 30 μA Capacitance between terminals Ct - 6.0 - pF VR=10V VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A Data Sheet RB501VM-40 100 10000 Ta=125°C 1000 REVERSE CURRENT:IR(µA) FORWARD CURRENT:IF(mA) Ta=125°C Ta=75°C 10 Ta=25°C Ta=−25°C Ta=75°C 100 Ta=25°C 10 1 Ta=−25°C 0.1 1 0.01 0 100 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 5 10 15 20 25 100 40 Ta=25°C IF=100mA n=30pcs 460 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 35 470 f=1MHz 10 1 450 440 430 AVE:438.8mV 420 0 10 20 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 30 16 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 20 15 10 Ta=25°C f=1MHz VR=10V n=10pcs 18 Ta=25°C VR=10V n=10pcs 25 REVERSE CURRENT:IR(µA) 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS AVE:2.57µA 14 12 10 8 6 4 5 AVE:5.81pF 2 0 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A 30 20 REVERSE RECOVERY TIME:trr(ns) 1cyc IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RB501VM-40 15 8.3ms 10 5 AVE:5.50A Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:6.20nS 0 0 trr DISPERSION MAP IFSM DISPERSION MAP 15 15 IFSM 8.3ms 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 1cyc 5 0 t 10 5 0 0.1 1 10 100 0.1 10 100 0.1 1000 Mounted on epoxy board Rth(j-a) 0.08 100 Rth(j-c) 10 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 1 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS D=1/2 0.06 DC Sin(θ＝180) 0.04 0.02 1 0.001 0 0.01 0.1 1 10 100 1000 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 0.2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS 3/4 2011.11 - Rev.A 0.07 0.3 0.06 0.25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) Data Sheet RB501VM-40 0.05 0.04 Sin(θ＝180) 0.03 D=1/2 0.02 Io 0V VR t 0.2 T DC D=t/T VR=20V Tj=125°C 0.15 D=1/2 0.1 DC Sin(θ＝180) 0.05 0.01 0A 0 0 0 10 20 0 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 0A Io 0V VR t 0.2 T DC D=t/T VR=20V Tj=125°C 0.15 D=1/2 0.1 Sin(θ＝180) 0.05 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A