ROHM RBE2VA20A

Data Sheet
Schottky Barrier Diode
RBE2VA20A
lApplications
Rectifying Small Power
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
1.1
0.17±0.1
0.05
2.5±0.2
1.9±0.1
lFeatures
1)Small Power Mold Type (TUMD2)
2)High reliability
0.8 0.5
2.0
1.3±0.05
TUMD2
lStructure
0.8±0.05
0.6±0.2
0.1
ROHM : TUMD2
dot (year week factory)
lTaping dimensions (Unit : mm)
0.25±0.05
8.0±0.2
2.75
1.43±0.05
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Tj=25C)
Parameter
Symbol
VF1
Forward voltage
VF2
Reverse current
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IR
φ 1.0±0.2
0
4.0±0.1
Limits
30
20
2
5
125
0.9±0.08
Unit
V
V
A
A
C
C
-40 to +125
Min.
Typ.
Max.
Unit
-
-
0.39
V
IF=1A
-
-
0.46
V
-
-
700
μA
IF=2A
VR=20V
1/4
2.8±0.05
φ 1.55±0.1
0
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
Conditions
2011.10 - Rev.A
Data Sheet
RBE2VA20A
100
10
Ta=125°C
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
Ta=125°C
1
Ta=75°C
0.1
Ta=25°C
0.01
10
Ta=75°C
1
Ta=25°C
0.1
Ta=-25°C
0.01
Ta=-25°C
0.001
0.001
0
100
200
300
400
0
500
10
15
20
25
30
450
1000
f=1MHz
440
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
10
Ta=25°C
IF=2A
n=30pcs
430
420
410
AVE:397.8mV
400
390
380
370
360
1
350
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
250
REVERSE CURRENT:IR(μA)
450
Ta=25°C
VR=20V
n=30pcs
400
350
AVE:254.3μA
300
250
200
150
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
500
Ta=25°C
f=1MHz
VR=0V
n=10pcs
240
230
220
AVE:211pF
210
100
50
200
0
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
30
50
1cyc
IFSM
40
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RBE2VA20A
8.3ms
AVE:25A
30
20
10
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
AVE:9.2ns
10
5
0
0
trr DISPERSION MAP
IFSM DISRESION MAP
50
50
45
IFSM
IFSM
40
8.3ms
35
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
45
8.3ms
1cyc
30
25
20
15
40
t
35
30
25
20
15
10
10
5
5
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
2
10000
1.5
1000
Rth(j-a)
100
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
10
1
0.001
D=1/2
1
Sin(θ＝180)
0.5
DC
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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3/4
0.5
1
1.5
2
2.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3
3.5
2011.10 - Rev.A
Data Sheet
RBE2VA20A
3
5
0A
4.5
2
1.5
1
DC
Sin(θ＝180)
D=1/2
0.5
VR
t
3.5
T
D=t/T
VR=10V
Tj=125°C
3
2.5
DC
D=1/2
2
1.5
1
0.5
0
Sin(θ＝180)
0
0
10
20
30
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
5
30
Io
0A
0V
4
No break at 30kV
t
DC
3.5
T
25
VR
D=t/T
VR=10V
Tj=125°C
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
4.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io
0V
4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
2.5
3
D=1/2
2.5
2
1.5
Sin(θ＝180)
1
20
15
10
AVE:4.4kV
5
0.5
0
0
0
25
50
75
100
125
C=200pF
R=0Ω
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A