Data Sheet Schottky Barrier Diode RB068L-40 lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 2.0 ① ② 4.2 1.2±0.3 7 0.1±0.02 0.1 5.0±0.3 3)High reliability 2 4.5±0.2 lFeatures 1)Small power mold type. (PMDS) 2)Ultra Low IR 2.0 2.6±0.2 PMDS 2.0±0.2 1.5±0.2 lStructure Silicon epitaxial planer lStructure ROHM : PMDS JEDEC : SOD-106 ① ② dot (year week factory) lTaping dimensions (Unit : mm) 2.0±0.05 0.3 φ 1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ 1.55 2.9±0.1 4.0±0.1 2.8MAX lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. IR Limits 40 40 2 40 125 Unit V V A A C C -40 to +150 Min. Typ. Max. - - 0.69 V - - 1 mA 1/4 Unit Conditions IF=2.0A VR=40V 2011.12 - Rev.A Data Sheet RB068L-40 1000 10000 Ta=150°C 100 Ta=125°C 1000 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(mA) Ta=150°C Ta=75°C 100 Ta=25°C 10 Ta=-25°C 1 10 Ta=75°C Ta=125°C 1 0.1 Ta=25°C 0.01 0.001 0.1 0 100 200 300 400 500 600 0 700 10 20 1000 40 700 f=1MHz Ta=25°C IF=2A n=30pcs FORWARD VOLTAGE:VF(mV) 680 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 100 10 660 640 620 600 AVE:621.1mV 580 560 540 1 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 600 Ta=25°C VR=40V n=30pcs 80 70 60 50 40 30 AVE:55.667nA Ta=25°C f=1MHz VR=0V n=10pcs 500 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 90 400 300 AVE:328.0pF 200 20 10 100 0 IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2011.12 - Rev.A Data Sheet RB068L-40 30 200 PEAK SURGE FORWARD CURRENT:IFSM(A) 150 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 100 AVE:111.0A 50 Ta=25°C IF=0.1A IR=0.11A Irr=0.1*IR n=10pcs 25 20 15 AVE:16.2ns 10 5 0 0 trr DISPERSION MAP IFSM DISPERSION MAP 300 200 150 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 100 50 Ifsm 250 t 200 150 100 50 0 0 1 10 100 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 3 1000 Rth(j-a) 100 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Mounted on epoxy board Rth(j-c) 10 D=1/2 2 Sin(θ=180) DC 1 1 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 5 2011.12 - Rev.A 5 0.05 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.03 0.02 DC Sin(θ=180) 0.01 D=1/2 0A Io 0V VR t 4 0.04 REVERSE POWER DISSIPATION:PR (W) Data Sheet RB068L-40 D=t/T VR=20V Tj=150°C T 3 DC D=1/2 2 1 Sin(θ=180) 0 0 0 10 20 30 0 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0V t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 75 100 125 150 30 Io 0A 4 T DC 50 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) VR D=t/T VR=20V Tj=150°C 3 D=1/2 2 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 5 25 20 15 AVE:17.6kV 10 Sin(θ=180) 1 5 C=200pF R=0Ω 0 C=100pF R=1.5kΩ 0 0 25 50 75 100 125 150 ESD DISPERSION MAP CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A