ROHM RB161SS-20

Data Sheet
Schottky Barrier Diode
RB161SS-20
lApplications
Small current rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
1.2
0.5
1.6±0.05
lFeatures
1)Small power mold type (KMD2)
2)High reliability
3)Low VF
lConstruction
Silicon epitaxial planer
1.2±0.05
0.8
0.8±0.05
0.6±0.03
0.7±0.05
0.4±0.05
0～0.03
ROHM : KMD2
JEDEC :JEITA : dot (year week factory)
KMD2
lStructure
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
Average rectified forward current
Io
IFSM
Forward current surge peak　(60Hz･1cyc.)
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF1
Forward Voltage
VF2
Reverse Current
IR
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Limits
30
20
1
5
125
Unit
V
V
A
A
C
C
-40 to +125
Min.
-
Typ.
0.33
0.38
0.20
1/4
Max.
0.37
0.42
1.00
Unit
V
V
mA
Conditions
IF=0.7A
IF=1.0A
VR=20V
2011.10 - Rev.A
Data Sheet
RB161SS-20
1000000
10
Tj=150°C
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
100000
Tj=150°C
1
Tj=125°C
Tj=25°C
0.1
Tj=75°C
Tj=125°C
10000
Tj=75°C
1000
Tj=25°C
100
0.01
10
0
200
400
600
0
5
10
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
Tj=25°C
100
10
Tj=25°C
IF=1.0A
n=20pcs
400
AVE:384mV
300
200
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
10000
AVE:386mA
100
Ta=25°C
f=1MHz
VR=0V
n=10pcs
195
Tj=25°C
VR=20V
n=20pcs
190
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(mA)
20
500
1000
1000
15
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
185
180
175
AVE:181.1pF
170
165
160
155
150
10
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
Data Sheet
RB161SS-20
30
30
REVERSE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms
20
15
AVE:15.7A
10
Tj=25°C
IF=0.1A
IR=0.1A
Irr=0.10×IR
n=10pcs
1cyc
IFSM
25
5
25
20
15
AVE:9.3ns
10
5
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
100
100
IFSM
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc
10
1
time
10
1
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
0.8
D.C.
Rth(j-a)
D=1/2
0.6
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
Rth(j-c)
10
Sin(θ＝180)
0.4
0.2
On glass-epoxy substrate
soldering land 50mm□
1
0.001
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.10 - Rev.A
Data Sheet
RB161SS-20
2
Io
0A
0V
2
VR
t
D.C.
1.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D.C.
Sin(θ＝180)
1
D=1/2
0.5
0
T
1.5
D=t/T
VR=10V
Tj=125°C
D=1/2
1
Sin(θ＝180)
0.5
0
0
25
50
75
100
125
0
25
50
75
100
125
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
AVE：3.6kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A