ROHM RB480Y-40

Data Sheet
Schottky Barrier Diode
RB480Y-40
lApplications
Low current rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
0.45
0.5
1.6±0.1
1.6±0.1
0.22±0.05
1.55
(3)
1.2±0.1
(4)
3)High reliability
(1)
lConstruction
Silicon epitaxial planer
1.6±0.1
1.6±0.05
lFeatures
1)Ultra small mold type. (EMD4)
2)Low IR
0.13±0.05
1.0
0～0.1
EMD4
(2)
0.5
0.5
1.0±0.1
lStructure
0.5±0.05
ROHM : EMD4
JEITA : SC-75A Size
week code
1Pin Mark
lTaping dimensions (Unit : mm)
φ 1.5±0.1
0
2.0±0.05
0.3±0.1
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF1
Forward voltage
VF2
Reverse current
φ 0.8±0.1
4.0±0.1
Limits
40
40
200
1
125
1.65±0.01
Unit
V
V
mA
A
C
C
-40 to +125
Typ.
Max.
Unit
-
-
0.39
V
-
-
0.55
V
IF=100mA
IR1
-
-
1.0
μA
IR2
-
-
10.0
μA
VR=10V
VR=40V
1/4
8.0±0.2
0.65±0.1
Min.
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0～0.1
1.65±0.1
1PIN
1.65±0.1
1.7±0.05
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
Conditions
IF=10mA
2011.10 - Rev.A
Data Sheet
RB480Y-40
1000
1000
Ta=125°C
Ta=125°C
Ta=75°C
10
Ta=25°C
1
Ta=75°C
REVERSE CURRENT:IR(μA)
100
FORWARD CURRENT:IF(mA)
100
0.1
Ta=-25°C
10
1
Ta=25°C
0.1
0.01
0.01
Ta=-25°C
0.001
0.001
0.0001
0
100
200
300
400
500
600
0
10
20
40
510
100
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
Ta=25°C
IF=100mA
n=30pcs
500
490
AVE:491.2mV
480
470
1
460
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
1000
Ta=25°C
VR=10V
n=30pcs
800
700
600
500
400
300
AVE:67.0nA
Ta=25°C
f=1MHz
VR=0V
n=10pcs
29
28
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
900
27
26
25
24
23
AVE:23.87pF
200
22
100
21
0
20
IR DISPERSION MAP
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Ct DISPERSION MAP
2/4
2011.10 - Rev.A
Data Sheet
RB480Y-40
20
20
Ta=25°C
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
15
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
8.3ms
10
5
15
10
5
AVE:6.2ns
AVE:3.70A
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
10
10
9
IFSM
IFSM
8
8.3ms
7
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
9
8.3ms
1cyc.
6
5
4
3
time
8
7
6
5
4
3
2
2
1
1
0
0
1
10
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0.25
D.C.
0.2
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
Rth(j-c)
100
D=1/2
Sin(θ＝180)
0.15
0.1
0.05
10
0.0001 0.001
0
0.01
0.1
1
10
100
0
1000
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0.1
0.2
0.3
0.4
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2011.10 - Rev.A
0.01
0.5
0.008
0.4
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
RB480Y-40
0.006
D=1/2
0.004
Sin(θ＝180)
Io
0V
VR
t
D.C.
T
D=t/T
VR=20V
Tj=125°C
0.3
D=1/2
0.2
Sin(θ＝180)
0.1
0.002
0
0
0
10
20
30
0
40
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0.5
30
Io
0A
0V
VR
t
0.4
D.C.
T
D=t/T
VR=20V
Tj=125°C
0.3
D=1/2
0.2
Sin(θ＝180)
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0.1
20
15
10
AVE:5.60kV
AVE:5.1kV
5
0
0
0
25
50
75
100
125
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A