ROHM RBE05VM20A

Data Sheet
Schottky Barrier Diode
RBE05VM20A
lApplications
Small current rectification
lDimensions (Unit : mm)
0.1±0.1
0.05
0.8MIN.
1.25±0.1
lLand size figure (Unit : mm)
2.5±0.2
1.7±0.1
2.1
lFeatures
1)Small mold type. (UMD2)
2)High reliability
0.9MIN.
UMD2
0.7±0.2
0.1
0.3±0.05
lStructure
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-901A
dot (year week factory)
lTaping dimensions (Unit : mm)
φ 1.55±0.05
2.0±0.05
0.3±0.1
8.0±0.2
2.75
φ 1.05
4.0±0.1
1.40±0.1
2.8±0.1
3.5±0.05
1.75±0.1
4.0±0.1
1.0±0.1
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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© 2011 ROHM Co., Ltd. All rights reserved.
IR
Limits
30
20
500
2
125
Unit
V
V
mA
A
C
C
-40 to +125
Min.
Typ.
Max.
Unit
-
-
0.43
V
-
-
200
μA
1/4
Conditions
IF=500mA
VR=20V
2011.10 - Rev.A
Data Sheet
RBE05VM20A
100000
1000
REVERSE CURRENT:IR (μA)
FORWARD CURRENT:IF(mA)
Ta=125°C
100
Ta=75°C
Ta=25°C
10
Ta=-25°C
10000
Ta=125°C
1000
Ta=75°C
100
Ta=25°C
10
Ta=-25°C
1
1
0
100
200
300
400
0
500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
15
20
25
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
400
100
f=1MHz
Ta=25°C
IF=500mA
n=30pcs
395
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
5
10
390
385
380
AVE:384.1mV
375
370
365
360
355
1
350
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
65
Ta=25°C
VR=20V
n=30pcs
90
80
AVE:84.9μA
70
Ta=25°C
f=1MHz
VR=0V
n=10pcs
64
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(μA)
100
AVE:62.8pF
63
62
61
60
60
50
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.10 - Rev.A
20
10
1cyc
IFSM
8
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RBE05VM20A
8.3ms
6
AVE:3.52A
4
2
0
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
15
10
AVE:5.8ns
5
0
IFSM DISPERSION MAP
trr DISPERSION MAP
10
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8
8.3ms
8.3ms
1cyc
6
4
IFSM
t
5
2
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
100
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0.5
10000
0.4
1000
Rth(j-a)
100
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
0.3
D=1/2
0.2
Sin(θ＝180)
10
DC
0.1
1
0.001
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0.2
0.4
0.6
0.8
1
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.10 - Rev.A
Data Sheet
RBE05VM20A
1
1.5
0A
Io
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0V
0.5
DC
D=1/2
Sin(θ＝180)
t
T
1
D=1/2
VR
D=t/T
VR=10V
Tj=125°C
DC
0.5
Sin(θ＝180)
0
0
0
10
20
30
0
25
50
1.5
100
125
30
Io
T
1
AVE:25.0kV
25
VR
t
D=t/T
VR=10V
Tj=125°C
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
75
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
DC
0.5
D=1/2
20
15
10
AVE:2.6kV
5
Sin(θ＝180)
0
0
0
25
50
75
100
125
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A