TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection - SLVU2.8-4BTG-S SLVU2.8-4BTG-S - 2.8V 40A TVS Array RoHS Pb GREEN Description The SLVU2.8-4BTG-S was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in series with each low voltage TVS to present a low loading capacitance to the line being protected. These robust structures can safely absorb repetitive ESD strikes at ±30kV (contact discharge) per IEC61000-4-2 standard and each structure can safely dissipate up to 40A (IEC61000-4-5 2nd edition, tP=8/20μs) with very low clamping voltages. Features Pinout 4 3 2 1 • ESD, IEC61000-4-2, ±30kV contact, ±30kV air • Low leakage current of 1μA (MAX) at 2.8V • EFT, IEC61000-4-4, 40A (5/50ns) • Lightning, IEC61000-4-5 2nd edition, 40A (8/20μs) • SOIC-8 (JEDEC MO-012) pin configuration allows for simple flow-through layout • Low capacitance of 2pF per line • Halogen free, Lead free and RoHS compliant Applications 5 6 7 8 • Analog Inputs • WAN/LAN Equipment • Base Stations • Switching Systems Functional Block Diagram Pin 1.3 • 10/100/1000 Ethernet Pin 6.8 • Desktops, Servers, and Notebooks Application Example Ethernet PHY Tx+ TxRx+ Rx- RJ-45 Connector J1 Pin 2.4 Pin 5.7 SLVU2.8-4 Device is shown as transparent for actual footprint J8 Case GND ©2015 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/24/16 TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection - SLVU2.8-4BTG-S Electrical Characteristics (TOP = 25°C) Parameter Symbol Test Conditions VRWM IR≤1μA Reverse Breakdown Voltage VBR IT=2μA 3.0 V Snap Back Voltage VSB IT=50mA 2.8 V Reverse Leakage Current ILEAK VR=2.8V (Each Line) VC IPP=5A, tP=8/20μs (Each Line) 9.0 V VC IPP=24A, tP=8/20μs (Each Line) 18.0 V Reverse Standoff Voltage Clamping Voltage 1 Clamping Voltage 1 Min Units 2.8 V μA IEC61000-4-2 (Contact) ±30 kV IEC61000-4-2 (Air) ±30 kV VESD Dynamic Resistance RDYN (VC2 - VC1) / (IPP2 - IPP1) (Each Line) CD VR=0V, f=1MHz (Each Line) Diode Capacitance Max 1 ESD Withstand Voltage1 1 Typ 1.1 Ω 2.0 pF Note: 1Parameter is guaranteed by design and/or device characterization. Absolute Maximum Ratings Capacitance vs. Reverse Voltage Parameter Units 600 W Peak Pulse Current (tP=8/20µs) 40 A Operating Temperature -40 to 125 ºC Storage Temperature -55 to 150 ºC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 5 4.5 Capacitance (pF) Rating Peak Pulse Power (tP=8/20µs) 4 3.5 3 2.5 2 1.5 1 0.5 0 Clamping Voltage vs. IPP 0 0.4 0.8 1.2 1.6 Bias Voltage (V) 2 2.4 2.8 8/20μS Pulse Waveform 20.0 110% 90% 15.0 Percent of IPP Clamp Voltage (VC) 100% 10.0 5.0 80% 70% 60% 50% 40% 30% 20% 10% 0.0 0.0 5.0 10.0 15.0 20.0 Peak Pulse Current-IPP (A) ©2015 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/24/16 25.0 0% 0.0 5.0 10.0 15.0 Time (μs) 20.0 25.0 30.0 TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection - SLVU2.8-4BTG-S Soldering Parameters Product Characteristics Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.004 inches(0.102mm) Reflow Condition Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Substrate material Silicon Average ramp up rate (Liquidus) Temp (TL) to peak Body Material Molded Epoxy TS(max) to TL - Ramp-up Rate Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to JEDEC SPEC MO-203 Issue A 5. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 6. Package surface matte finish VDI 11-13. - Temperature (TL) (Liquidus) Reflow - Temperature (tL) 5°C/second max 5°C/second max 217°C 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C tP Temperature TP Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 tS time to peak temperature Time Package Dimensions — Mechanical Drawings and Recommended Solder Pad Outline Package SOIC-8 Pins 8 JEDEC MS-012 Millimetres Inches LF A 1.35 1.75 0.053 0.069 o A1 0.10 0.25 0.004 0.010 Min Recommended Soldering Pad Outline (Reference Only) Max 1.25 1.65 0.050 0.065 B 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 5.80 6.20 0.228 0.244 E1 3.80 4.00 0.150 0.157 L Revision: 02/24/16 Min A2 1.27 BSC e ©2015 Littelfuse, Inc. Specifications are subject to change without notice. Max 0.40 0.050 BSC 1.27 0.016 0.050 TVS Diode Arrays (SPA® Diodes) Lightning Surge Protection - SLVU2.8-4BTG-S Part Numbering System Part Marking System Marking Code SLVU2.8 -4 B T G - S Series No. of channels Package Customer Code LF U2.8-4 G= Green XYYWW T= Tape & Reel Pin 1 B = SOIC-8 Date Code Marking X:Location YYWW: Date Code Embossed Carrier Tape & Reel Specification — SOIC Package User Feeding Direction Pin 1 Location Symbol Millimetres Inches Min Max Min Max E 1.65 1.85 0.065 0.073 F 5.4 5.6 0.213 0.22 P2 1.95 2.05 0.077 0.081 D 1.5 1.6 0.059 0.063 4.1 0.154 1.50 Min D1 3.9 P0 0.059 Min 40.0 +/- 0.20 10P0 0.161 1.574 +/- 0.008 W 11.9 12.1 0.468 0.476 P 7.9 8.1 0.311 0.319 A0 6.3 6.5 0.248 0.256 B0 5.1 5.3 0.2 0.209 K0 2 2.2 0.079 0.087 t 0.30 +/- 0.05 0.012 +/- 0.002 Ordering Information ©2015 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/24/16 Part Number Package Marking Min. Order Qty. SLVU2.8-4BTG-S SOIC-8 U2.8-4 2500