TSL1412S 1536 × 1 Linear Sensor Array with Hold General Description The TSL1412S linear sensor array consists of 2 sections of 768 photodiodes, each with associated charge amplifier circuitry, aligned to form a contiguous 1536 × 1 pixel array. The device incorporates a pixel data-hold function that provides simultaneous-integration start and stop times for all pixels. The pixels measure 63.5μm by 55.5μm with 63.5μm center-to-center spacing and 8μm spacing between pixels. Operation is simplified by internal logic that requires only a serial-input (SI) pulse and a clock. The device is intended for use in a wide variety of applications including mark and code reading, OCR and contact imaging, edge detection and positioning, and optical encoding. Ordering Information and Content Guide appear at end of datasheet. Key Benefits & Features The benefits and features of the TSL1412S Linear Sensor Array with Hold, are listed below: Figure 1: Added Value of Using TSL1412S Benefits Features • Provides High Density Pixel Count • 1536 x 1 Sensor Element Organization • Enables High Resolution Scanning • 400 Dots-Per-Inch (DPI) Sensor Pitch • Enables Capacitive Threshold Sensing • High Linearity and Uniformity • Provides Full Dynamic Range • Rail-to-rail Output Swing (AO) • Wide Dynamic Range... 4000:1 (72dB) • Output Referenced to Ground • Low Image Lag... 0.5% Typ • Operation to 8MHz • Single 3V to 5V Supply • No External Load Resistor Required ams Datasheet [v1-00] 2016-May-11 Page 1 Document Feedback TSL1412S − General Description Block Diagram The functional blocks of this device are shown below: Figure 2: TSL1412S Block Diagram (each section) Pixel 1 (769) S1 Pixel 3 (771) Pixel 2 (770) 1 Integrator Reset 2 Pixel 768 (1536) Analog Bus 2 _ 1 3 V DD 13 + S2 Sample/Hold/ Output Output Buffer 6, 12 AO 5 GND Gain Trim Switch Control Logic 7, 11 3, 9 Hold CLK SI Hold 4, 10 Q1 Q2 Q3 SO Q768 (Q1536) 768-Bit Shift Register (2 each) 2, 8 Page 2 Document Feedback ams Datasheet [v1-00] 2016-May-11 TSL1412S − Detailed Description Detailed Description The sensor consists of 1536 photodiodes, called pixels, arranged in a linear array. Light energy impinging on a pixel generates photocurrent that is then integrated by the active integration circuitry associated with that pixel. During the integration period, a sampling capacitor connects to the output of the integrator through an analog switch. The amount of charge accumulated at each pixel is directly proportional to the light intensity on that pixel and the integration time. The output and reset of the integrators are controlled by a 768-bit shift register and reset logic. An output cycle is initiated by clocking in a logic 1 on SI. Another signal, called HOLD, is generated from the rising edge of SI1 when SI1 and HOLD1 are connected together. This causes all 768 sampling capacitors to be disconnected from their respective integrators and starts an integrator reset period. As the SI pulse is clocked through the shift register, the charge stored on the sampling capacitors is sequentially connected to a charge-coupled output amplifier that generates a voltage on analog output AO. The integrator reset period ends 18 clock cycles after the SI pulse is clocked in. Then the next integration period begins. On the 768 th clock rising edge, the SI pulse is clocked out on the SO1 pin (section 1) and becomes the SI pulse for section 2 (when SO1 is connected to SI2). The rising edge of the 769 th clock cycle terminates the SO1 pulse, and returns the analog output AO of section 1 to high-impedance state. Similarly, SO2 is clocked out on the 1536 th clock pulse. Note that a 1537 th clock pulse is needed to terminate the SO2 pulse and return AO of Section 2 to the high-impedance state. If a minimum integration time is desired, the next SI pulse may be presented after a minimum delay of tqt (pixel charge transfer time) after the 1537th clock pulse. Sections may be operated in parallel or in serial fashion. AO is an op amp-type output that does not require an external pull-down resistor. This design allows a rail-to-rail output voltage swing. With V DD = 5V, the output is nominally 0V for no light input, 2V for normal white level, and 4.8V for saturation light level. When the device is not in the output phase, AO is in a high-impedance state. ams Datasheet [v1-00] 2016-May-11 Page 3 Document Feedback TSL1412S − Detailed Description The voltage developed at analog output (AO) is given by: Vout = Vdrk + (Re) (Ee) (t int) where: • V out is the analog output voltage for white condition • V drk is the analog output voltage for dark condition • R e is the device responsivity for a given wavelength of light given in V/(μJ/cm2) • E e is the incident irradiance in μW/cm 2 • t int is integration time in seconds A 0.1μF bypass capacitor should be connected between VDD and ground as close as possible to the device. Page 4 Document Feedback ams Datasheet [v1-00] 2016-May-11 TSL1412S − Pin Assignments Pin Assignments The TSL1412S pin assignments are described below: Figure 3: Pin Diagram of TSL1412S Package (Top View) 1 2 3 4 5 6 7 8 9 10 11 12 13 ams Datasheet [v1-00] 2016-May-11 V PP SI1 HOLD1 CLK1 GND AO1 SO1 SI2 HOLD2 CLK2 SO2 AO2 V DD Page 5 Document Feedback TSL1412S − Pin Assignments Figure 4: Terminal Functions Terminal I/O Description Name No. VPP 1 SI1 2 I Serial input (section 1). SI1 defines the start of the data-out sequence. HOLD1 3 I Hold signal. HOLD1 shifts pixel data to parallel buffer. HOLD1 is normally connected to SI1 and HOLD2 in serial mode and to SI1 in parallel mode. CLK1 4 I Clock, section 1. CLK1 controls charge transfer, pixel output, and reset. GND 5 AO1 6 O Analog output, section 1 SO1 7 O Serial output (section 1). SO1 provides a signal to drive the SI2 input in serial mode. SI2 8 I Serial input (section 2). SI2 defines the start of the data-out sequence. HOLD2 9 I Hold signal. HOLD2 shifts pixel data to parallel buffer. HOLD2 is normally connected to SI2 in parallel mode. CLK2 10 I Clock, section 2. CLK2 controls charge transfer, pixel output, and reset. SO2 11 O Serial output (section 2). SO2 provides a signal to drive the SI input of another device for cascading or as an end-of-data indication. AO2 12 O Analog output, section 2. VDD 13 Page 6 Document Feedback Normally grounded Ground (substrate). All voltages are referenced to GND. Supply voltage for both analog and digital circuitry. ams Datasheet [v1-00] 2016-May-11 TSL1412S − Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only. Functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings Figure 5: Absolute Maximum Ratings over Operating Free-Air Temperature Range (unless otherwise noted) Symbol Min Max Unit Supply voltage -0.3 6 V VI Input voltage range -0.3 VDD + 0.3V V IIK Input clamp current, (VI < 0) or (VI > VDD) -20 20 mA IOK Output clamp current, (VO < 0) or (VO > VDD) -25 25 mA VO Voltage range applied to any output in the high impedance or power-off state -0.3 VDD + 0.3V V IO Continuous output current, (VO = 0 to VDD) -25 25 mA Continuous current through VDD or GND -40 40 mA Analog output current range -25 25 mA 5 mJ/cm2 VDD IO Parameter Maximum light exposure at 638nm TA Tstrg Operating free-air temperature range -25 85 °C Storage temperature range -25 85 °C 260 °C Lead temperature 1.6mm (1/16 inch) from case for 10 seconds ams Datasheet [v1-00] 2016-May-11 Page 7 Document Feedback TSL1412S − Electrical Characteristics Electrical Characteristics All limits are guaranteed. The parameters with min and max values are guaranteed with production tests or SQC (Statistical Quality Control) methods. Figure 6: Recommended Operating Conditions Symbol Min Nom Max Unit Supply voltage 3 5 5.5 V VI Input voltage 0 VDD V VIH High-level input voltage VDD × 0.7 VDD V VIL Low-level input voltage 0 VDD × 0.3 V 400 1100 nm 5 8000 kHz VDD λ fclock Parameter Wavelength of light source Clock frequency tint Sensor integration time, serial (1) 0.20975 100 ms tint Sensor integration time, parallel (1) 0.11375 100 ms tsu(SI) Setup time, serial input 20 ns th(SI) Hold time, serial input (2) 0 ns TA Operating free-air temperature 0 CL Load capacitance RL Load resistance 300 70 °C 330 pF Ω Note(s): 1. Integration time is calculated as follows: tint(min) = (1536 - 18) x clock period + 20μs where 1536 is the number of pixels in series, 18 is the required logic setup clocks, and 20μs is the pixel charge transfer time (t qt) 2. SI must go low before the rising edge of the next clock pulse. Page 8 Document Feedback ams Datasheet [v1-00] 2016-May-11 TSL1412S − Electrical Characteristics Figure 7: Electrical Characteristics at fclock = 1MHz, VDD = 5V, TA = 25°C, λp = 640nm, tint = 5ms, RL = 330Ω, Ee = 12.5μW/cm 2 (unless otherwise noted) (1) Symbol Parameter Test Conditions Min Typ Max Unit 1.6 2 2.4 V 0 0.1 0.3 V Vout Analog output voltage (white, average over 1280 pixels) See note (2) Vdrk Analog output voltage (dark, average over 1280 pixels) Ee = 0 Pixel response nonuniformity See note (3) Nonlinearity of analog output voltage See note (4) ±0.4% Output noise voltage See note (5) 1 Responsivity See note (6) 20 30 VDD = 5V, RL = 330Ω 4.5 4.8 PRNU Re Vsat ±20% 2.5 IDD 2.8 155 nJ/cm2 Saturation exposure VDD = 3V IL (7) 90 Dark signal nonuniformity All pixels, Ee = 0 (8) 0.05 Image lag See note (9) 0.5% 0.15 VDD = 5V, Ee = 0 40 55 VDD = 3V, Ee = 0 30 45 Supply current VIH High-level input voltage VIL Low-level input voltage ams Datasheet [v1-00] 2016-May-11 V/ (μJ/cm2) V VDD = 5V (7) DSNU 38 Analog output saturation voltage VDD = 3V, RL = 330Ω SE mVrms V mA 2 V 0.8 V Page 9 Document Feedback TSL1412S − Electrical Characteristics Symbol Parameter Test Conditions Min Typ Max Unit IIH High-level input current VI = VDD 10 μA IIL Low-level input current VI = 0 10 μA Ci Input capacitance, SI 25 pF Ci Input capacitance, CLK 25 pF Note(s): 1. All measurements made with a 0.1μF capacitor connected between V DD and ground. 2. The array is uniformly illuminated with a diffused LED source having a peak wavelength of 640nm. 3. PRNU is the maximum difference between the voltage from any single pixel and the average output voltage from all pixels of the device under test when the array is uniformly illuminated at the white irradiance level. PRNU includes DSNU. 4. Nonlinearity is defined as the maximum deviation from a best-fit straight line over the dark-to-white irradiance levels, as a percent of analog output voltage (white). 5. RMS noise is the standard deviation of a single-pixel output under constant illumination as observed over a 5-second period. 6. R e(min) = [Vout(min) - Vdrk(max)] ÷ (Ee × tint) 7. SE (min) = [Vsat(min) - Vdrk(min)] × (Ee × tint) ÷ [Vout(max) - Vdrk(min)] 8. DSNU is the difference between the maximum and minimum output voltage for all pixels in the absence of illumination. 9. Image lag is a residual signal left in a pixel from a previous exposure. It is defined as a percent of white-level signal remaining after a pixel is exposed to a white condition followed by a dark condition: V out ( IL ) – V drk IL = -------------------------------------------- × 100 V out ( white ) – V drk Page 10 Document Feedback ams Datasheet [v1-00] 2016-May-11 TSL1412S − Electrical Characteristics Figure 8: Timing Requirements (see Figure 10 and Figure 11) Symbol Parameter Min Nom Max Unit tsu(SI) Setup time, serial input (1) 20 ns th(SI) Hold time, serial input (1), (2) 0 ns tpd(SO) Propagation delay time, SO 50 tw Pulse duration, clock high or low 50 tr , tf Input transition (rise and fall) time 0 Pixel charge transfer time 20 tqt ns 500 ns μs Note(s): 1. Input pulses have the following characteristics: tr = 6ns, t f = 6ns. 2. SI must go low before the rising edge of the next clock pulse. Figure 9: Dynamic Characteristics Over Recommended Ranges of Supply Voltage and Operating Free-Air Temperature (see Figure 16 and Figure 17) Symbol Parameter ts Analog output settling time to ±1% tpd(SO) Propagation delay time, SO1, SO2 ams Datasheet [v1-00] 2016-May-11 Test Conditions RL = 330Ω, CL = 50pF Min Typ Max Unit 120 ns 50 ns Page 11 Document Feedback TSL1412S − Typical Characteristics Typical Characteristics Figure 10: Timing Waveforms (Serial Connection) CLK tqt SI1 Internal Reset Integration 18 Clock Cycles tint Not Integrating Integrating ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ 1537 Clock Cycles AO Hi-Z Hi-Z Figure 11: Operational Waveforms (Each Section) tw 1 2 768 769 5V 2.5 V CLK 0V tsu(SI) 5V SI 50% 0V th(SI) tpd(SO) tpd(SO) SO ts AO Page 12 Document Feedback Pixel 1 Pixel 768 ams Datasheet [v1-00] 2016-May-11 TSL1412S − Typical Characteristics Figure 12: Photodiode Spectral Responsivity 1 TA = 25qC Relative Responsivity 0.8 0.6 0.4 0.2 0 300 400 500 600 700 800 900 1000 1100 O ï Wavelength ï nm Figure 13: Normalized Idle Supply Current vs. Free-Air Temperature IDD Normalized Idle Supply Current 2 1.5 1 0.5 0 0 10 20 30 40 50 60 70 TA ï Free-Air Temperature ï qC ams Datasheet [v1-00] 2016-May-11 Page 13 Document Feedback TSL1412S − Typical Characteristics Figure 14: White Output Voltage vs. Free-Air Temperature 2 Vout Output Voltage V VDD = 5 V tint = 0.5 ms to 15 ms 1.5 1 0.5 0 0 10 20 30 40 60 50 TA ï Free-Air Temperature ï qC 70 Figure 15: Dark Output Voltage vs. Free-Air Temperature 0.10 VDD = 5 V tint = 0.5 ms tint = 1 ms Vout Output Voltage 0.09 0.08 tint = 15 ms tint = 5 ms tint = 2.5 ms 0.07 0.06 0 Page 14 Document Feedback 10 20 30 40 60 50 TA ï Free-Air Temperature ï qC 70 ams Datasheet [v1-00] 2016-May-11 TSL1412S − Typical Characteristics Figure 16: Settling Time vs. Load 600 VDD = 3 V Vout = 1 V Settling Time to 1% ns 500 470 pF 400 220 pF 300 200 100 pF 100 10 pF 0 0 200 400 600 800 RL Load Resistance ï W 1000 Figure 17: Settling Time vs. Load 600 VDD = 5 V Vout = 1 V Settling Time to 1% ns 500 470 pF 400 220 pF 300 200 100 pF 100 0 ams Datasheet [v1-00] 2016-May-11 10 pF 0 200 400 600 800 RL Load Resistance ï W 1000 Page 15 Document Feedback TSL1412S − Application Information Application Information Figure 18: Operational Connections 1 1 2 3 4 SI1/HOLD1/HOLD2 CLK1 and CLK2 5 6 SO1 SI2 8 9 10 11 12 SERIAL Page 16 Document Feedback SI1/HOLD1 CLK1 and CLK2 5 6 7 13 2 3 4 SO2 AO1/AO2 VDD 7 AO1 SO1 8 SI2/HOLD2 9 10 11 12 13 SO2 AO2 VDD PARALLEL ams Datasheet [v1-00] 2016-May-11 TSL1412S − Application Information Integration Time The integration time of the linear array is the period during which light is sampled and charge accumulates on each pixel’s integrating capacitor. The flexibility to adjust the integration period is a powerful and useful feature of the ams TSL14xx linear array family. By changing the integration time, a desired output voltage can be obtained on the output pin while avoiding saturation for a wide range of light levels. The integration time is the time between the SI (Start Integration) positive pulse and the HOLD positive pulse minus the 18 setup clocks. The TSL14xx linear array is normally configured with the SI and HOLD pins tied together. This configuration will be assumed unless otherwise noted. Sending a high pulse to SI (observing timing rules for setup and hold to clock edge) starts a new cycle of pixel output and integration setup. However, a minimum of (n+1) clocks, where n is the number of pixels, must occur before the next high pulse is applied to SI. It is not necessary to send SI immediately on/after the (n+1) clocks. A wait time adding up to a maximum total of 100ms between SI pulses can be added to increase the integration time creating a higher output voltage in low light applications. Each pixel of the linear array consists of a light-sensitive photodiode. The photodiode converts light intensity to a voltage. The voltage is sampled on the Sampling Capacitor by closing switch S2 (position 1) (see Figure 2 on page 2). Logic controls the resetting of the Integrating Capacitor to zero by closing switch S1 (position 2). At SI input, all of the pixel voltages are simultaneously scanned and held by moving S2 to position 2 for all pixels. During this event, S2 for pixel 1 is in position 3. This makes the voltage of pixel 1 available on the analog output. On the next clock, S2 for pixel 1 is put into position 2 and S2 for pixel 2 is put into position 3 so that the voltage of pixel 2 is available on the output. Following the SI pulse and the next 17 clocks after the SI pulse is applied, the S1 switch for all pixels remains in position 2 to reset (zero out) the integrating capacitor so that it is ready to begin the next integration cycle. On the rising edge of the 19 th clock, the S1 switch for all the pixels is put into position 1 and all of the pixels begin a new integration cycle. The first 18 pixel voltages are output during the time the integrating capacitor is being reset. On the 19th clock following an SI pulse, pixels 1 through 18 have switch S2 in position 1 so that the sampling capacitor can begin storing charge. For the period from the 19 th clock through the nth clock, S2 is put into position 3 to read the output voltage during the nth clock. On the next clock the previous pixel S2 switch is put into position 1 to start sampling the integrating capacitor voltage. For ams Datasheet [v1-00] 2016-May-11 Page 17 Document Feedback TSL1412S − Application Information example, S2 for pixel 19 moves to position 1 on the 20 th clock. On the n+1 clock, the S2 switch for the last (n th) pixel is put into position 1 and the output goes to a high-impedance state. If a SI was initiated on the n+1 clock, there would be no time for the sampling capacitor of pixel n to charge to the voltage level of the integrating capacitor. The minimum time needed to guarantee the sampling capacitor for pixel n will charge to the voltage level of the integrating capacitor is the charge transfer time of 20μs. Therefore, after n+1 clocks, an extra 20μs wait must occur before the next SI pulse to start a new integration and output cycle. The minimum integration time for any given array is determined by time required to clock out all the pixels in the array and the time to discharge the pixels. The time required to discharge the pixels is a constant. Therefore, the minimum integration period is simply a function of the clock frequency and the number of pixels in the array. A slower clock speed increases the minimum integration time and reduces the maximum light level for saturation on the output. The minimum integration time shown in this data sheet is based on the maximum clock frequency of 8MHz. The minimum integration time can be calculated from the equation: 1 T int ( min ) = ------------------------------------------------------------------------- × ( n – 18 ) pixels + 20μs maximum clock frequency where: n is the number of pixels In the case of the TSL1412S with the maximum clock frequency of 8MHz, the minimum integration time would be: Tint(min) = 0.125μs × (768 - 18) + 20μs = 113.75μs It is good practice on initial power up to run the clock (n+1) times after the first SI pulse to clock out indeterminate data from power up. After that, the SI pulse is valid from the time following (n+1) clocks. The output will go into a high-impedance state after the n+1 high clock edge. It is good practice to leave the clock in a low state when inactive because the SI pulse required to start a new cycle is a low-to-high transition. The integration time chosen is valid as long as it falls in the range between the minimum and maximum limits for integration time. If the amount of light incident on the array during a given integration period produces a saturated output (Max Voltage output), then the data is not accurate. If this occurs, the integration period should be reduced until the analog output voltage for each pixel falls below the saturation level. The goal of reducing the period of time the light sampling window is active is to lower the output voltage level to prevent saturation. However, the integration time must still be greater than or equal to the minimum integration period. Page 18 Document Feedback ams Datasheet [v1-00] 2016-May-11 TSL1412S − Application Information If the light intensity produces an output below desired signal levels, the output voltage level can be increased by increasing the integration period provided that the maximum integration time is not exceeded. The maximum integration time is limited by the length of time the integrating capacitors on the pixels can hold their accumulated charge. The maximum integration time should not exceed 100ms for accurate measurements. It should be noted that the data from the light sampled during one integration period is made available on the analog output during the next integration period and is clocked out sequentially at a rate of one pixel per clock period. In other words, at any given time, two groups of data are being handled by the linear array: the previous measured light data is clocked out as the next light sample is being integrated. Although the linear array is capable of running over a wide range of operating frequencies up to a maximum of 8MHz, the speed of the A/D converter used in the application is likely to be the limiter for the maximum clock frequency. The voltage output is available for the whole period of the clock, so the setup and hold times required for the analog-to-digital conversion must be less than the clock period. ams Datasheet [v1-00] 2016-May-11 Page 19 Document Feedback TSL1412S − Mechanical Information Mechanical Information Figure 19: TSL1412S Mechanical Specifications TOP VIEW 0.100 (2,54) x 12 = 1.2 (30,48) (Tolerance Noncumulative) 1.318 (33,477) 1.328 (33,730) 1.455 (36,95) 1.445 (36,70) 1.377 (34,975) 1.357 (34,467) 0.047 (1,194) 0.037 (0,940) 0.095 (2,41) 0.080 (2,03) Pixel 1 0.100 (2,540) 0.090 (2,285) 0.100 (2,54) BSC 1 13 0.242 (6,15) 0.222 (5,64) 0.510 (12,95) 0.490 (12,45) Centerline of Pixels 0.228 (5,79) 0.208 (5,28) DETAIL A 0.021 (0,533) DIA 13 Places 0.055 (1,340) 0.045 (1,143) 0.047 (1,194) 0.037 (0,940) 0.0563 (1,430) 0.0461 (1,171) Dia. 2 places 0.455 (11,557) 0.445 (11,303) 3.995 (101,47) 4.005 (101,72) 4,089 (103,86) 4.079 (103,60) 0.130 (3,30) 0.120 (3,05) Cover Glass (Index of Refraction = 1.52) ÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈ 0.027 (0,690) Linear Array 0.048 (1,22) 0.038 (0,97) 0.015 (0,38) Typical Free Area ÌÌÌÌÌÌ ÌÌÌÌÌÌ Cover Glass Bonded Chip Bypass Cap DETAIL A Note(s): 1. All linear dimensions are in inches (millimeters). 2. Cover glass index of refraction is 1.52. 3. The gap between the individual sensor dies in the array is 57μm typical (51μm minimum and 75μm maximum). 4. This drawing is subject to change without notice. Page 20 Document Feedback ams Datasheet [v1-00] 2016-May-11 TSL1412S − Mechanical Information Figure 20: Edge Pixel Layout Dimensions THEORETICAL PIXEL LAYOUT FOR IDEAL CONTINUOUS DIE 8.00 63.50 55.50 Nï2 Nï1 N 1 3 2 ACTUAL MULTI-DIE PIXEL LAYOUT FOR DIE-TO-DIE EDGE JOINING Nï2 Nï1 95.50 76.50 64.00 Note 2 N 1 2 3 46.00 154.50 37.00 11.00 25.50 14.50 13.00 Note 3 Note(s): 1. All linear dimensions are in micrometers. 2. Spacing between outside pixels of adjacent die is typical. 3. Die-to-die spacing. 4. This drawing is subject to change without notice. ams Datasheet [v1-00] 2016-May-11 Page 21 Document Feedback TSL1412S − Ordering & Contact Information Ordering & Contact Information Figure 21: Ordering Information Ordering Code Type Delivery Form Delivery Quantity TSL1412S 1536 x 1 Array Tray 20 pcs/tray Buy our products or get free samples online at: www.ams.com/ICdirect Technical Support is available at: www.ams.com/Technical-Support Provide feedback about this document at: www.ams.com/Document-Feedback For further information and requests, e-mail us at: [email protected] For sales offices, distributors and representatives, please visit: www.ams.com/contact Headquarters ams AG Tobelbaderstrasse 30 8141 Premstaetten Austria, Europe Tel: +43 (0) 3136 500 0 Website: www.ams.com Page 22 Document Feedback ams Datasheet [v1-00] 2016-May-11 TSL1412S − RoHS Compliant & ams Green Statement RoHS Compliant & ams Green Statement RoHS: The term RoHS compliant means that ams AG products fully comply with current RoHS directives. Our semiconductor products do not contain any chemicals for all 6 substance categories, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, RoHS compliant products are suitable for use in specified lead-free processes. ams Green (RoHS compliant and no Sb/Br): ams Green defines that in addition to RoHS compliance, our products are free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material). Important Information: The information provided in this statement represents ams AG knowledge and belief as of the date that it is provided. ams AG bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. ams AG has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ams AG and ams AG suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. ams Datasheet [v1-00] 2016-May-11 Page 23 Document Feedback TSL1412S − Copyrights & Disclaimer Copyrights & Disclaimer Copyright ams AG, Tobelbader Strasse 30, 8141 Premstaetten, Austria-Europe. Trademarks Registered. All rights reserved. The material herein may not be reproduced, adapted, merged, translated, stored, or used without the prior written consent of the copyright owner. Devices sold by ams AG are covered by the warranty and patent indemnification provisions appearing in its General Terms of Trade. ams AG makes no warranty, express, statutory, implied, or by description regarding the information set forth herein. ams AG reserves the right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with ams AG for current information. This product is intended for use in commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment are specifically not recommended without additional processing by ams AG for each application. This product is provided by ams AG “AS IS” and any express or implied warranties, including, but not limited to the implied warranties of merchantability and fitness for a particular purpose are disclaimed. ams AG shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interruption of business or indirect, special, incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of ams AG rendering of technical or other services. Page 24 Document Feedback ams Datasheet [v1-00] 2016-May-11 TSL1412S − Document Status Document Status Document Status Product Preview Preliminary Datasheet Datasheet Datasheet (discontinued) ams Datasheet [v1-00] 2016-May-11 Product Status Definition Pre-Development Information in this datasheet is based on product ideas in the planning phase of development. All specifications are design goals without any warranty and are subject to change without notice Pre-Production Information in this datasheet is based on products in the design, validation or qualification phase of development. The performance and parameters shown in this document are preliminary without any warranty and are subject to change without notice Production Information in this datasheet is based on products in ramp-up to full production or full production which conform to specifications in accordance with the terms of ams AG standard warranty as given in the General Terms of Trade Discontinued Information in this datasheet is based on products which conform to specifications in accordance with the terms of ams AG standard warranty as given in the General Terms of Trade, but these products have been superseded and should not be used for new designs Page 25 Document Feedback TSL1412S − Revision Information Revision Information Changes from 045F (2007-Apr) to current revision 1-00 (2016-May-11) Page Content of TAOS datasheet was converted to the latest ams design Updated Key Benefits & Features 1 Added Figure 21 22 Note(s): 1. Page and figure numbers for the previous version may differ from page and figure numbers in the current revision 2. Correction of typographical errors is not explicitly mentioned. Page 26 Document Feedback ams Datasheet [v1-00] 2016-May-11 TSL1412S − Content Guide Content Guide ams Datasheet [v1-00] 2016-May-11 1 1 2 General Description Key Benefits & Features Block Diagram 3 5 7 8 12 Detailed Description Pin Assignments Absolute Maximum Ratings Electrical Characteristics Typical Characteristics 16 17 Application Information Integration Time 20 22 23 24 25 26 Mechanical Information Ordering & Contact Information RoHS Compliant & ams Green Statement Copyrights & Disclaimer Document Status Revision Information Page 27 Document Feedback