AON6906A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6906A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization.It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Q2 "Low Side" MOSFET is desgined for low R DS(ON) to reduce conduction losses.Power losses are minimized due to an extremely low combination of R DS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Q1 30V VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 37A <14.4mΩ RDS(ON) (at VGS = 4.5V) <21.3mΩ Q2 30V 48A <11.7mΩ <17.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View PIN1 Bottom View Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TC=25°C Pulsed Drain Current C Continuous Drain Current IDM TA=25°C IDSM TA=70°C Max Q2 Units V ±20 V 37 ID TC=100°C 30 48 23 30 85 100 9.1 10 7.2 8.1 A A Avalanche Current C IAS, IAR 21 23 A Avalanche Energy L=0.1mH C EAS, EAR 22 26 mJ TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0. Oct 2010 t ≤ 10s Steady-State Steady-State RθJA RθJC 31 45 12.5 18 1.9 2 1.2 1.3 -55 to 150 Typ Q1 29 56 3.3 www.aosmd.com Typ Q2 27 51 2.3 Max Q1 Max Q2 35 32 67 61 4 2.8 W W °C Units °C/W °C/W °C/W Page 1 of 10 AON6906A Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 On state drain current VGS=10V, VDS=5V 85 100 nA 1.8 2.4 V 12 14.4 17.5 21 VGS=4.5V, ID=9.1A 17 21.3 VDS=5V, ID=9.1A 30 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 5 VDS=0V, VGS= ±20V RDS(ON) Crss V TJ=55°C VGS=10V, ID=9.1A Output Capacitance Units 1 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=9.1A A 0.73 mΩ mΩ S 1 V 33 A 400 510 670 pF 150 220 310 pF 13 22 38 pF 0.9 1.8 2.7 Ω 5.9 7.4 9 nC 2.6 3.3 4.0 nC 1.2 1.5 1.8 nC 0.8 1.4 2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=9.1A, dI/dt=500A/µs 7.2 9 11 Qrr Body Diode Reverse Recovery Charge IF=9.1A, dI/dt=500A/µs 11.8 14.7 17.7 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 4.3 ns 8 ns 15.8 ns 3.4 ns ns nC 2 A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct 2010 www.aosmd.com Page 2 of 10 AON6906A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V VDS=5V 80 7V 6V 40 ID(A) 4.5V 60 ID (A) 5V 50 4V 30 40 20 3.5V 20 VGS=3V 10 0 25°C 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 0 20 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 1.8 18 RDS(ON) (mΩ) 125°C VGS=10V ID=9.1A 1.6 16 VGS=4.5V 14 1.4 17 VGS=4.5V 5 ID=9.1A 2 1.2 12 10 VGS=10V 10 1 8 0 5 10 15 20 25 0.8 30 0 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 50 1.0E+02 1.0E+01 35 ID=9.1A 30 40 1.0E+00 125°C 1.0E-01 25 IS (A) RDS(ON) (mΩ) 25 125°C 25°C 1.0E-02 20 1.0E-03 15 1.0E-04 10 25°C 1.0E-05 5 3 7 9 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Oct 2010 5 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 AON6906A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=15V ID=9.1A Ciss 600 Capacitance (pF) VGS (Volts) 8 6 400 4 Coss 200 2 Crss 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 8 160 100.0 30 RDS(ON) limited 10.0 100us 1ms 1.0 DC TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 1 VDS (Volts) 120 80 40 10 100 0 0.0001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 1 Rev 0: Oct 2010 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W 0.1 0.01 0.00001 TJ(Max)=150°C TC=25°C 10µs Power (W) ID (Amps) 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 200 1000.0 ZθJC Normalized Transient Thermal Resistance 5 PD Ton Single Pulse 0.0001 0.001 T 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 10 Page 4 of 10 AON6906A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100.0 IAR (A) Peak Avalanche Current 35 Power Dissipation (W) 30 25 TA=25°C TA=100°C 20 TA=125°C 15 TA=150°C 10 5 0 10.0 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 40 35 TA=25°C 1000 30 25 Power (W) Current rating ID(A) 150 20 15 10 17 5 2 10 100 10 5 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 ZθJA Normalized Transient Thermal Resistance 0.001 0.1 10 0 18 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 1 0.00001 40 RθJA=67°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 Rev 0: Oct 2010 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) www.aosmd.com 100 1000 Page 5 of 10 AON6906A Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 On state drain current VGS=10V, VDS=5V 100 VDS=0V, VGS= ±20V 100 18.2 VGS=4.5V, ID=10A 14 17.5 VDS=5V, ID=10A 25 Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A V A 15.1 TJ=125°C nA 2.3 11.7 gFS Crss 1.8 9.7 Static Drain-Source On-Resistance µA 5 VGS=10V, ID=10A Output Capacitance V TJ=55°C RDS(ON) Units 1 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ 0.72 mΩ mΩ S 1 V 48 A 450 570 750 pF 180 260 370 pF 12 20 35 pF 0.9 1.8 2.7 Ω 6.5 8.2 10 nC 2.8 3.5 4.2 nC 1.2 1.6 2 nC 0.8 1.4 2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 6.8 8.6 10 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 11.3 14.1 17 4.1 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω ns 7.8 ns 15.2 ns 3.3 ns ns nC 2 A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct 2010 www.aosmd.com Page 6 of 10 AON6906A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V VDS=5V 80 7V 5V 50 6V 4.5V 40 ID(A) ID (A) 60 4V 40 3.5V 20 125°C 20 VGS=3V 10 0 25°C 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 0 18 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 1.8 16 RDS(ON) (mΩ) 30 VGS=10V ID=10A 1.6 14 VGS=4.5V 12 10 VGS=10V 8 1.4 17 1.2 VGS=4.5V5 ID=10A 2 10 1 6 0 5 10 15 20 25 0.8 30 0 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 39 50 1.0E+02 1.0E+01 34 ID=10A 29 40 1.0E+00 125°C 1.0E-01 24 IS (A) RDS(ON) (mΩ) 25 125°C 25°C 1.0E-02 19 1.0E-03 14 1.0E-04 9 25°C 1.0E-05 4 3 7 9 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Oct 2010 5 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 AON6906A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=15V ID=10A 800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 Coss 200 2 Crss 0 0 0 3 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 9 160 100.0 30 RDS(ON) limited 10.0 100us 1ms 1.0 DC TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 1 VDS (Volts) 120 80 40 10 100 0 0.0001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 1 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) RθJC=2.8°C/W PD Ton Single Pulse Rev 0: Oct 2010 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.1 0.01 0.00001 TJ(Max)=150°C TC=25°C 10µs Power (W) ID (Amps) 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 200 1000.0 ZθJC Normalized Transient Thermal Resistance 5 0.0001 0.001 T 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 10 Page 8 of 10 AON6906A 100 50 Power Dissipation (W) IAR (A) Peak Avalanche Current Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 TA=25°C TA=100°C 30 TA=125°C TA=150°C 20 10 0 10 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 TA=25°C 40 1000 Power (W) Current rating ID(A) 50 10000 50 30 20 17 5 2 10 100 10 10 0 0 25 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 10 ZθJA Normalized Transient Thermal Resistance 25 1 50 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 150 1 0.00001 0.001 0.1 10 0 18 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=61°C/W 0.1 PD 0.01 0.001 0.00001 Rev 0: Oct 2010 Single Pulse 0.0001 0.001 0.01 Ton T 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) www.aosmd.com 100 1000 Page 9 of 10 AON6906A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Oct 2010 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 10 of 10