AO6404 20V N-Channel MOSFET General Description Product Summary • The AO6404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. VDS (V) = 20V ID = 8.6A (V GS = 10V) RDS(ON) < 17mΩ (V GS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) • RoHS and Halogen-Free Compliant ESD Rating: 2000V HBM ESD Protected 100% UIS Tested 100% Rg Tested TSOP6 Top View D Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Orderable Part Number AO6404 Package Type TSOP6 Form Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A B TA=25°C Power Dissipation A Junction and Storage Temperature Range Maximum Junction-to-Lead C Rev.5.0: April 2016 Units V ±12 V ID 6.8 IDM 30 W 1.28 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum 20 8.6 TA=70°C Pulsed Drain Current Minimum Order Quantity 3000 RθJA RθJL www.aosmd.com Typ 45 70 33 °C Max 62.5 110 50 Units °C/W °C/W °C/W Page 1 of 5 AO6404 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 10 IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C 25 10 VGS=10V, ID=8.5A 0.75 17 20 VGS=4.5V, ID=5A 14.8 18 mΩ VGS=2.5V, ID=4A 18.8 24 mΩ VGS=1.8V, ID=3A 25.5 33 mΩ 1 V 2.9 A 2200 pF VDS=5V, ID=8A 36 Diode Forward Voltage IS=1A,VGS=0V 0.73 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Rg Gate resistance 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge V 16 Forward Transconductance Reverse Transfer Capacitance 1 A VSD Crss µA V gFS Output Capacitance µA 13.4 TJ=125°C Coss Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ VGS=4.5V, VDS=10V, ID=8.5A mΩ S 232 pF 200 pF 1.6 2.2 Ω 17.9 22 nC 1.5 nC Qgd Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 2.5 ns tr Turn-On Rise Time 7.2 ns tD(off) Turn-Off DelayTime 49 ns tf trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 9.8 VGS=10V, VDS=10V, RL=1.2Ω, RGEN=3Ω Turn-Off Fall Time 10.8 ns 27 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.5.0: April 2016 www.aosmd.com Page 2 of 5 AO6404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 35 30 2.5V 4.5V VDS=5V 2V 25 30 20 ID(A) ID (A) 25 20 15 15 125°C 10 10 VGS=1.5V 5 25°C 5 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 30 1.5 2 2.5 1.6 ID=5A Normalized On-Resistance VGS=1.8V 25 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics VGS=2.5V 20 VGS=4.5V 15 VGS=10V 10 5 VGS=4.5V VGS=2.5V 1.4 VGS=10V 1.2 VGS=1.8V 1 0.8 0 5 10 15 20 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 10 ID=5A 35 1 25 125°C 0.1 125°C IS (A) RDS(ON) (mΩ Ω) 30 20 0.01 15 25°C 0.001 10 25°C 5 0.0001 0 0 2 4 6 8 10 0.00001 0.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.5.0: April 2016 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 AO6404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=8A 2500 Capacitance (pF) VGS (Volts) 4 3 2 1500 1000 1 Coss 500 Crss 0 0 4 8 12 16 0 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 1ms 30 10µs Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Ciss 2000 10ms 1.0 1s 0.1s 10 TJ(Max)=150°C TA=25°C DC 0 0.001 0.1 0.1 20 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PDM 0.1 Ton Toff Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev.5.0: April 2016 www.aosmd.com Page 4 of 5 AO6404 Figure A: Gate Gate Charge Charge Test Test CircuitCircuit & Waveform & Waveforms Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive TestCircuit Circuit & Waveforms ResistiveSwitching Switching Test & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure Unclamped C: Unclamped Inductive Switching (UIS) Test Circuit & Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure Diode D: Diode Recovery Test Circuit & Waveforms Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.5.0: April 2016 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5