Datasheet

AO8830
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AO8830/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is suitable
for use as a uni-directional or bi-directional load
switch, facilitated by its common-drain configuration.
AO8830 and AO8830L are electrically identical.
-RoHs Compliant
-AO8830L is Halogen Free
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
RDS(ON) < 37mΩ (VGS = 3.1V)
RDS(ON) < 41mΩ (VGS = 2.5V)
RDS(ON) < 55mΩ (VGS = 1.8V)
ESD PROTECTED!
D2
D1
TSSOP8
Top View
Bottom View
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G1
1.6K
1.6K
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
ID
IDM
TA=70°C
TA=25°C
Power Dissipation
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Units
V
±12
V
30
1.5
W
0.94
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
4.8
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Maximum
20
6
Pulsed Drain Current B
A
S2
RθJA
RθJL
Typ
64
115
70
Max
83
140
85
Units
°C/W
°C/W
°C/W
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AO8830
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
1
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS=±10V
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=1mA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
16
TJ=125°C
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
A
22
27
31
mΩ
mΩ
VGS=3.1V, ID=4A
22
30
37
VGS=2.5V, ID=4A
25
32
41
mΩ
VGS=1.8V, ID=2A
32
42
55
mΩ
1
V
2.5
A
VDS=5V, ID=6A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
V
30
Forward Transconductance
Rg
1
25
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Crss
0.6
19
VSD
Output Capacitance
V
VGS=4.5V, ID=5A
gFS
Coss
µA
10
VGS=10V, ID=6A
IS
Units
V
VDS=16V, VGS=0V
BVGSO
Static Drain-Source On-Resistance
Max
20
IGSS
RDS(ON)
Typ
21
0.75
S
290
pF
VGS=0V, VDS=10V, f=1MHz
120
pF
40
VGS=0V, VDS=0V, f=1MHz
1.6
pF
kΩ
5.2
nC
2.1
nC
VGS=4.5V, VDS=10V, ID=6A
Qgd
Gate Drain Charge
1.9
nC
tD(on)
Turn-On DelayTime
280
ns
tr
Turn-On Rise Time
972
tD(off)
Turn-Off DelayTime
2.35
ns
µs
tf
Turn-Off Fall Time
2.2
µs
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs, VGS=-9V
25
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs, VGS=-9V
8
ns
nC
VGS=4.5V, VDS=10V, RL=1.7Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The currentand power rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 5: July 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO8830
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
VGS=5V
3V
4V
25
VGS =2V
20
25°C
125°C
ID(A)
ID(A)
20
VGS =1.5V
10
15
10
5
0
0
1
2
3
4
0
5
0.0
VDS(Volts)
1.5
2.0
1.6
60
Normalize ON-Resistance
VGS =1.8V
50
RDS(ON)(mΩ)
1.0
VGS =2.5V
40
30
20
VGS =10V
VGS =4.5V
10
2.5
3.0
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristi cs
0
VGS=4.5V
VGS=2.5V
1.4
ID=5A
ID=4A
1.2
VGS=10V
1.0
VGS=1.8V
ID=6A
ID=2A
0.8
0.6
0
5
10
15
20
-50
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
80
1E+01
ID=6A
70
1E+00
60
125°C
1E-01
50
IS(A)
RDS(ON)(mΩ)
0.5
125°C
40
1E-02
1E-03
30
20
1E-04
25°C
25°C
1E-05
10
0
2
4
6
8
10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
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AO8830
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
5
VDS=10V
Capacitance (pF)
4
VGS(Volts)
Ciss
ID=6A
3
2
1
300
200
Coss
Crss
100
0
0
0
1
2
3
4
5
0
6
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
Power (W)
ID (Amps)
10
1ms
1
0.1
20
10ms
100ms
DC
10
20
15
10
5
10s
1
TJ(Max)=150°C
TA=25°C
25
10µs
0.1
15
30
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
10
VDS(Volts)
Figure 8: Capacitance Characteristics
0
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.01
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO8830
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds
-
VDC
DUT
Qgd
Qgs
-
Vgs
Ig
Charge
R e sistive S w itch in g T e st C ircu it & W a ve fo rm s
RL
Vds
V ds
DUT
V gs
Rg
9 0%
+ Vdd
VDC
-
10%
V gs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vds
Vdd
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