AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. VDS (V) = 20V ID = 7.5 A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 3.6V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2500V HBM D1 D2 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C ±12 V ID 6 IDM 30 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 0.96 TJ, TSTG t ≤ 10s Steady-State Steady-State A 1.5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 7.5 Pulsed Drain Current B A Maximum 20 RθJA RθJL Typ 64 89 53 °C Max 83 120 70 Units °C/W °C/W °C/W AO8814 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Min ID=250µA, VGS=0V Typ 20 Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Max 1 TJ=55°C 5 µA µA IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=10V, ID=7.5A 10 13 16 14 18 22 VGS=4.5V, ID=7A 11.5 15 18 VGS=3.6V, ID=6A 13 16.8 20 mΩ VGS=2.5V, ID=6A 15 19 24 mΩ VGS=1.8V, ID=5A 20 26 34 mΩ 10 TJ=125°C RDS(ON) Static Drain-Source On-Resistance Forward Transconductance VDS=5V, ID=7.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current gFS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=4.5V, VDS=10V, ID=7.5A V 0.71 30 0.74 mΩ mΩ S 1 V 2.5 A 1390 pF 190 pF 150 pF 1.5 Ω 15.4 nC 1.4 nC 4 nC 6.2 ns tD(on) Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=7.5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs 5.1 Body Diode Reverse Recovery Time V A tr VGS=5V, VDS=10V, RL=1.3Ω, RGEN=3Ω 1 11 ns 40.5 ns 10 ns 15 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 5: Feb 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO8814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 20 3V 4V VDS=5V VGS =2V 15 ID(A) ID(A) 20 10 10 125°C 5 VGS =1.5V 25°C 0 0 0 1 2 3 4 5 0.0 VDS(Volts) 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics 50 1.6 VGS=2.5V Normalize ON-Resistance VGS =1.8V 40 RDS(ON)(mΩ ) 0.5 VGS =3.6V 30 VGS =2.5V 20 10 VGS =4.5V VGS =10V 0 ID=6A VGS=4.5V 1.4 ID=7A VGS=1.8V ID=5A 1.2 VGS=10V ID=7.5A 1.0 0.8 0 5 10 15 20 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=7.5A 1E+00 125°C 1E-01 40 IS(A) RDS(ON)(mΩ ) 50 125°C 30 1E-02 1E-03 20 1E-04 25°C 25°C 1E-05 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO8814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=10V ID=7.5A 3 2 1200 800 Crss 1 400 0 0 0 Ciss 1600 Capacitance (pF) VGS(Volts) 4 5 10 15 Coss 0 20 RDS(ON) limited 10µs 20 1ms 0.1s TJ(Max)=150°C TA=25°C 30 100µs Power (W) ID (Amps) 15 40 TJ(Max)=150°C TA=25°C 10.0 10 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=83°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000